50MIN Search Results

Contextual Info: HVM17 Variable Capacitance Diode for FM tuner HITACHI ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001652

Contextual Info: HVM17 Variable Capacitance Diode for FM tuner ADE-208-087B Z Preliminary Rev. 2 May. 1993 Features • • • • Good linearity of C-V curve. To be usable at low voltage. High figure of merit. (Q = 50min) MPAK package is suitable for high density surface mounting and high speed assembly.

2SC3519

Abstract: 2SC3519A transistor 2sc3519 2SA1386
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A

2SC4467

Abstract: transistor 2SC4467 2SA1694
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

2SC4065

Abstract: TRANSISTOR SE 135
Contextual Info: Power Transistor 2SC4065 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB (Ta=25ºC) Unit µA mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) –5

2SA1386

Abstract: 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386
Contextual Info: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A

2SC3856

Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
Contextual Info: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)

2SC5101

Abstract: 2SA1909 DSA0016511
Contextual Info: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A

2SA1746

Abstract: DSA0016504
Contextual Info: 2SA1746 LOW VCE sat Silicon PNP Epitaxial Planar Transistor V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –50min V –12(Pulse–20) A hFE 50min VCE=–1V, IC=–5A IB –4 A VCE(sat) IC=–5A, IB=–80mA –0.5max PC 60(Tc=25°C) W VBE(sat)

2SC4467

Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

2SC3519

Abstract: 2SC3519A SE140 2SA1386 c 3519a DSA0016507
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A V VCB= VEBO 5 V IEBO IC 15 A V(BR)CEO IB 4 A hFE PC 130(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=10V, f=1MHz 180 160 V 50min∗ IC=5A, IB=0.5A 2.0max V

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB4R7M Features Item Summary 4.7 H ±20% , 4A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB5R6M Features Item Summary 5.6 H ±20% , 3.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

2SA1725

Abstract: 2SC4511 FM20 2sa1725 transistor
Contextual Info: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C

Contextual Info: QFP-Socket and Emulation-Adapter HHSÌ3 QFP/TQFP80 20 x 20 0.65 mm pitch IC - Dimensions Adapter PCB-Layout (View from Soldering Side) Socket PCB-Layout (Top View) 2-20. 50min .4-14. 70max .65 x 19.= ß. 6 5 * 1 9 = 1 2 . 3 5 ± 0 . 12.35 ±0. 4 - 1 3. 0 Ori I r

2SA1568

Abstract: TRANSISTOR 2SA1568
Contextual Info: Power Transistor 2SA1568 ICBO IEBO V BR CEO hFE VCE (sat) VFEC fT COB Ratings –100max –60max –60min 50min –0.35max –2.5max 40typ 330typ (Ta=25ºC) Unit µA mA V External Dimensions FM20 (full-mold) 10.0 V V MHz pF a b RL (Ω) 4 IC (A) –6 VBB1

2SC4466

Abstract: 2SA1693
Contextual Info: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ

2SA1726

Abstract: 2SC4512
Contextual Info: 2SA1726 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4512 VCB=–80V –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–25mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max

2SC4466

Abstract: 2SA1693
Contextual Info: 2SA1693 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4466 –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO IC=–50mA –80min V –6 A hFE 50min∗ VCE=–4V, IC=–2A A VCE(sat) IC=–2A, IB=–0.2A –1.5max V 60(Tc=25°C) W

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB222J Features Item Summary 2200 H ±5% , 0.25A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB102J Features Item Summary 1000 H ±5% , 0.41A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB272J Features Item Summary 2700 H ±5% , 0.24A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL08TB220K Features Item Summary 22 H ±10% , 1.8A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions 9.5(max)x9(max)

Contextual Info: Spec Sheet INDUCTORS Radial Leaded Inductors LHL10TB470K Features Item Summary 47 H ±10% , 1.7A, 50min, Leaded Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions 14(max)x11(max)