50822800 Search Results

diode 5082-3080

Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications

diode 5082-2800

Abstract: diode 5082-2800 datasheet UHF/VHF
Contextual Info: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS

HP5082-2800

Abstract: OP90GPZ OP903 D-0032-1 741 OP Amp application integrator op90
Contextual Info: a Precision Low-Voltage Micropower Operational Amplifier OP90 FEATURES Single/Dual Supply Operation: 1.6 V to 36 V, ؎0.8 V to ؎18 V True Single-Supply Operation; Input and Output Voltage Ranges Include Ground Low Supply Current: 20 ␮A Max High Output Drive: 5 mA Min

diode hp 2835 schottky

Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
Contextual Info: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available

IR 10e

Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

HEDS-6000

Abstract: HCPL 350 2200 OPTOCOUPLER HXTR-2101 4N45 HCPL-4100 hsmx-3635 4N46 6N136 6N137
Contextual Info: HEW LETT PACKARD Ë Ë f f j iJ i C T -3 3 -0 5 7 ?5>-/3 - a f ’ ^ S í - 3 .Ì H ig h S p e e d pt©eoupll@r Blsgrarn-' - ^ ^ •]*« •JsXt\ Ê&nsal ÛS t. I ' i B *n D a* MTx-etr t I u m i E -« ÿ -*»G E g Un 'O 3*5*1 5? s Bata Raie Part No. input

5082-2080

Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
Contextual Info: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05

5082-2815

Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
Contextual Info: Ihp% 1"KM Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/

4 pr 16 awg

Contextual Info: w a r n H EW LETT 1 "KM PA CKARD 8 MBd Low Input Current Optocoupler Technical Data HCPL-2300 Features • G uaranteed L ow Thresholds: IF = 0.5 mA, VF < 1.5 V • High Speed: G uaranteed 5 MBd over Tem perature • V ersatile: C om patible w ith TTL, LSTTL and CMOS

OP295G

Abstract: OP295 OP495 2n1711 spice model NPN transistor 2n2222 beta value 2N1711 spice 2N2907 PNP Transistor Vaf OP295GP OP295GS OP295GS-REEL
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 FEATURES Rail-to-Rail Output Swing Single-Supply Operation: 3 V to 36 V Low Offset Voltage: 300 mV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1,000 V/mV Unity-Gain Stable Low Supply Current/Per Amplifier: 150 ␮A max

SCHOTTKY DIODES CROSS REFERENCE

Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Contextual Info: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C

1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented

diode hpa 2800

Abstract: diode hpa 2900 IN5711 5082-2815 HP 2804 1N6712 HPA 2900 5082-2813 5082-2970 diode hp 2800
Contextual Info: HE WLE TT-PACKARD/ CMPNTS blE D m 44475A4 OGQTbSb 7TT • HPA Whpl Schottky B a rrie r Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Sw itching Speed • High Breakdown Voltage

IRF 548

Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39

Contextual Info: • 4M475Ô4 0001374 Sbl « H P A Wff^k HEWLETT HEWLETT-PACKARD/ CMPNTS blE D PACKARD S ch ottk y B arrier C hips for H ybrid In tegrated C ircuits Technical Data 5082-0009, 5082-0013, 5082-0023,5082-0097, HSMS-0001, HSMS-0011, HSMS-0002, HSMS-0012, HSMS-0003, HSMS-0013

IN5712

Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
Contextual Info: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V

ku-band pll lnb

Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)

transistor 2n1711

Abstract: OP295 OP495 OP295G 2N3906 MAT03 OP295GBC OP495GBC REF43
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 Battery-operated instrumentation Servo amplifiers Actuator drives Sensor conditioners Power supply control GENERAL DESCRIPTION Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS

diode t25 13 Go

Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Contextual Info: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in

diode hpa 2800

Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4447564 QQOIbeb 7ST * H P A Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V

HCPL-2300 equivalent

Abstract: ic hcpl2300 Rl-680
Contextual Info: W fip l H E W L E T T m Lftm P A C K A R D 8 MBd Low Input Current Optocoupler Technical Data HCPL-2300 Features • Guaranteed Low Thresholds: IF = 0.5 mA, VF < 1.5 V • High Speed: Guaranteed 5 MBd over Temperature • Versatile: Compatible with TTL, LSTTL and CMOS

1N5712

Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring