505A Search Results

505A

Abstract: ld-505a
Contextual Info: 1800714160 Cortney Live Court, Oak City Ave, of SteIndustry, D Baldwin CA Park, 91706, CA U.S.A. 91706• Tel: 626 472-7764 (626) 581-0211Fax: • Fax: (626)472-7766 (626) 581-0511 Visible L a s e r D i o d e Technical Data LD– 505A ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC )

ADE-208-505A

Abstract: BB101C DSA003642
Contextual Info: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;

Contextual Info: AUGUST 1995 DS402ST DS4183-2.2 DS402ST RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 1400V VRRM 505A IF AV 5600A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

BB101C

Contextual Info: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

Contextual Info: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)

schematic diagram headset

Abstract: cudf speaker protection circuit diagram
Contextual Info: CM1683 Praetorian L-C EMI Filter with ESD Protection for Headsets/Speakers Product Description http://onsemi.com CUDFN8 DE SUFFIX CASE 505AF 100 pF C 8 100 pF C 3 nH 4 100 pF L C Features • • • • • • L Two Channels of EMI Filtering ±8 kV ESD Protection IEC 61000−4−2, Contact Discharge)

SDB-505

Abstract: SDB-505A-RD SDB505AGD SDB-505A-GD SDB-505C-GD SDB-505B-GD SDB-505A 505b SDB505BRD SDB-505B-RD
Contextual Info: ▼CHARACTERISTICS BY SHAPE Shape I R Part No. Emitted Color Resin Color Ta=25°C Brack»t M ataia Luminous Intensity Chip E'ement tv mcd fig. MIN. TYP. lF(mA) BR 10 20 20 AY 5 10 20 SDB-505A-RD Red Red Diffused SDB-505A-YD Yellow Yellow Diffused SDB-505A-GD

505AB

Abstract: DFN20
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN20, 6x5, 0.5P CASE 505AB−01 ISSUE B 20 DATE 05 DEC 2008 1 SCALE 2:1 A D NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINALS AND IS MEASURED BETWEEN

120C

Abstract: 175C TR402ST TR402ST09 TR402ST10 TR402ST11 TR402ST12 TR402ST13 TR402ST14
Contextual Info: TRANSYS TR402ST lUCTMIIICS L i m i t EU Rectifier Diode G KEY PARAMETERS VRRM 1400V 505A J AV 5600A FSM APPLICATIONS • Rectification ■ Freewheel Diode f ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers FEATURES ■ Double Side Cooling

DFN20

Abstract: 505ab
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN20 CASE 505AB−01 ISSUE A 20 DATE 09 JUL 2004 1 SCALE 2:1 A D NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS IN MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINALS AND IS MEASURED BETWEEN

FE-505A

Abstract: FE-405A
Contextual Info: STATE OF THE ART QUARTZ CR YSTAL STA N D A R D S Models FE-205A FE-405A FE-505A DESCRIPTION This new design concept features a precision double oven crystal oscillator capable of analog or digital tuning. The serial digital tuning is ideal for disciplined applications in today’s telecommunica­

Contextual Info: CM1683 Praetorian L-C EMI Filter with ESD Protection for Headsets/Speakers Product Description http://onsemi.com CUDFN8 DE SUFFIX CASE 505AF 100 pF C 5 C 100 pF L C Two Channels of EMI Filtering ±8 kV ESD Protection IEC 61000−4−2, Contact Discharge)

transistor equivalent 505a

Abstract: transistor equivalent 2N6287 C-48U 2N6286 2N6287 MIL-PRF19500 S16884 transistor marking code whs QML-19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999 INCH-POUND MIL-PRF-19500/505B 4 August 1999 SUPERSEDING MIL-S-19500/505A USAF 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER

DFN5X6

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 CASE 505AC−01 ISSUE A 8 DATE 29 JUN 2004 1 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN

Contextual Info: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

DR-4524

Abstract: SWITCH ETHERNET MOXA MOXA EDS DR-120-24 DR-75-24 RJ45 LED ping moxa MOXA EDS-508A EDS-508A-MM-SC-T
Contextual Info: Managed Ethernet Switch Solutions EtherDevice Switch EDS-508A/505A Series Industrial 8- and 5-Port Advanced Managed Ethernet Switches Highlights Plug-n-play Turbo Ring Recovery time < 300 ms , RSTP/ STP (IEEE802.1W/D) for Ethernet redundancy Managed Ethernet Switch EDS-508A/505A Series

Contextual Info: su GEC P L E S S E Y august 1995 S E M I C O N D U C T O R S DS4183-2.2 DS402ST RECTIFIER DIODE KEY PARAMETERS v¥ 1400V 505A J A V 5600A FSM APPLICATIONS • Rectification. rrm ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. f ■ Welding.

AN4506

Abstract: DS402ST DS402ST09 DS402ST10 DS402ST11 DS402ST12 DS402ST13 DS402ST14
Contextual Info: DS402ST DS402ST Rectifier Diode Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000 KEY PARAMETERS VRRM 1400V IF AV 505A IFSM 5600A APPLICATIONS • Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers

FE-405A

Abstract: FE205 FE-505A rubidium frequency standards
Contextual Info: STATE OF THE ART QUARTZ CRYSTAL STANDARDS Models FE-205A FE-405A FE-505A DESCRIPTION This new design concept features a precision double oven crystal oscillator capable of analog or digital tuning. The serial digital tuning is ideal for disciplined applications in today’s telecommunica­

3 PIN hall effect 506k

Abstract: an 503 sensor hall HAL 506K an 503 hall sensor 506A Magnetic Sensors forklift Hall Effect Sensor Family 503K hall effect 506k TRANSISTOR MT SMD 506K
Contextual Info: MICRONAS INTERMETALL HAL501.506, 508, 509, HAL516.518 Hall Effect Sensor Family MICRONAS Edition Feb. April 4, 16,1996 1999 6251-365-1DS 6251-485-1DS HAL5xx Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features

17D429SP

Abstract: 17DM51155 17DM53744-7 17DM-51157
Contextual Info: ?ie d • sBonpo □□□□flflo a m ■ AMPHENOL D-SUBMINIATURE 17DM S E R IE S REM OVABLE CO N TACTS SIZ E 8 Straight High Voltage Contacts All Dimensions in Inches (mm) B E Plug Receptacle Part number A Max B wire size Plug 17DM51157 .539(13,7) .732(18,6)

Contextual Info: STM8AF6x26/4x/66/68 Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V Datasheet - production data Features • Core – Max fCPU: 16 MHz – Advanced STM8A core with Harvard architecture and 3-stage pipeline

Hirect

Abstract: H505CHXX 1200V 100 A THYRISTOR thyristor phase control rectifier thyristor control circuit 650C Phase Control Thyristor thyristor vrrm 1800
Contextual Info: PHASE CONTROL THYRISTOR H505CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 50 50 mA mA 505 A 800 A 6.50 kA 211 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

STM8AF6223

Contextual Info: STM8AF6223 STM8AF6223A STM8AF6226 Automotive 8-bit MCU, with up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM, 10-bit ADC, 3 timers, LINUART, SPI, I²C, 3 to 5.5 V Datasheet - production data Interrupt management •  Nested interrupt controller with 32 interrupts