50480 Search Results

50480

Contextual Info: DigitalTelecom Features Generic VDSL Line Isolation recommendations • • • • EE5 - SMD 1:1 turns ratio Operation bandwidth: 20kHz-10MHz 100 ohm line For VDSL and ADSL applications EP7 - TH LPRI @20°C Part Number 50480R 50270 Leakage L Dielectric mH Min

Contextual Info: DigitalTelecom Features Generic VDSL Line Isolation recommendations • • • • EE5 - SMD 1:1 turns ratio Operation bandwidth: 20kHz-10MHz 100 ohm line For VDSL and ADSL applications EP7 - TH LPRI @20°C Part Number 50480R 50270 Leakage L Dielectric mH Min

15006

Abstract: STD 243 S N53100Z1EB1 53100z f6z1 EH8006Z1
Contextual Info: Three Phase Bridges Pa rt N u m b er G 5360Z 1EB 1 G 50480Z1EB 1 G 5380Z 1EB 1 G 504100Z1EB 1 G 53100Z 1EB 1 G 504120Z1EB 1 G 53120Z 1EB 1 E HF2Z1 E H S2Z1 EH10002Z1 EH8002Z1 EH 15002Q EH 15002Y N 50420Z1EB1 N 5320Z1EB1 N50440Z1EB1 N 5340Z1EB1 N 50460Z1EB1

Contextual Info: IVidcom Midcom's 50480Y: Low percent-power isolation One of Midcom's new signal products may also be used where low-power isolation is required. The product, Midcom's 50480Y, is actually a T1/E1 transformer, but in the right circuit can be used to provide more than 400mW across a 1500 V isolation barrier.

Acc 2089

Abstract: ACC MICRO 2089 acc micro 2168 acc micro 2048 ACC MICRO 2086 ACC Microelectronics Corporation ACC Microelectronics ACC MICRO 2178 acc micro 2016 acc micro 2066
Contextual Info: 2016 ACC MICRO 2016 BUFFER AND MUX LOGIC DATA BOOK MARCH 1997 Revision 2.0 ACC Microelectronics Corporation, 2500 Augustine Drive, Santa Clara, CA 95054 Phone: 408 980-0622 Fax: (408) 980-0626 TM ACC Micro 2016 ACC Microelectronics Corporation 2500 Augustine Drive,

High Power GaAs FET

Abstract: Fujitsu GaAs FET application note C-111A EIAJ ED-4701 111A RM1101 fujitsu gaas fet ED-4701 FLC317MG-4 High voltage GaAs FET FLC31
Contextual Info: FLC317MG-4 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=34.8dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Proven Reliability ・Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

Contextual Info: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

MULTIPLEXER IC

Abstract: FMM381CG FMM381DG FCSI
Contextual Info: 2.5Gb/s GaAs 4:1 Multiplexer IC FMM381CG/DG FEATURES CG • High speed operation up to 2.7 GHz from DC • Internal timing generator • ECL Compatible Input and output • Single -5.2V Power Supply • Stable operation at wide temperature range between 0 and 85°C

vectron crystal oscillator

Abstract: 32.768 khz crystal 5ppm
Contextual Info: VTD3 series Voltage Controlled Temperature Compensated Crystal Oscillator Features • CMOS Output • Output Frequencies to 61.440 MHz • Fundamental Crystal Design • Optional VCXO function available • Product is compliant to RoHS directive Applications

FMM110VJ

Contextual Info: FMM110VJ GaAs MMIC FEATURES • Operation to 10 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION

DFB wavelength locker

Abstract: eudyna laser diode FLD5F20CE-E9535 FLD5F20CE-E9425 etalon wavelength locker 55nm E9425 e9530 Hauser+hrc+001 FLD5F20CE-E9195
Contextual Info: 1,550nm MI DFB Laser with Integrated Wavelength Locker FLD5F20CE-E FEATURES • • • • • 10Gb/s Modulator Integrated DFB Laser Diode Module Wavelength: ITU-T grid W9180 1563.05nm thru W9600 (1529.55nm) 1600 ps/nm Dispersion Compact package with GPO connector

EUDYNA

Abstract: STM-16
Contextual Info: FID3Z2KX/LX PIN Photodiode FEATURES KX • Data rates up to 2.5 Gb/s • High Quantum Efficiency: 0.8A/W at 1,310nm • Low dark current: 0.1nA • Photosensitive area: 50µm diameter • Wide spectral response range: 900nm to 1,600nm APPLICATIONS • Optical transmission system: STM-1 OC-3 ,

Contextual Info: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω

eudyna GaAs FET RF Transistor

Abstract: high frequency transistor ga as fet transistor on 4959 eudyna fet
Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

FLL21E004ME

Contextual Info: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION

Contextual Info: FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

C-Band Power GaAs FET

Abstract: FLC257MH-8
Contextual Info: FLC257MH-8 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 35%(Typ.) ProvenReliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general

Contextual Info: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω

eudyna GaAs FET RF Transistor

Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor