500V P CHANNEL MOSFET Search Results
500V P CHANNEL MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
TK5R1A08QM |
![]() |
MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
TK155E65Z |
![]() |
N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
TK090U65Z |
![]() |
MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL | Datasheet | ||
TK5R3E08QM |
![]() |
MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB | Datasheet |
500V P CHANNEL MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
400v p-channel mosfetContextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD3P50TM -500V, 400v p-channel mosfet | |
FQD3P50TM_F085Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD3P50TM -500V, FQD3P50TM_F085 | |
to-247 to-220 to-3p
Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
|
Original |
-100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P | |
FQD1P50
Abstract: FQU1P50
|
Original |
FQD1P50 FQU1P50 -500V, FQU1P50 | |
FQD1P50
Abstract: FQU1P50
|
Original |
FQD1P50 FQU1P50 -500V, FQU1P50 | |
FQPF1P50Contextual Info: QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
Original |
FQPF1P50 -500V, FQPF1P50 | |
OM12P10SA
Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
|
Original |
OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA | |
FQD1P50
Abstract: FQU1P50
|
Original |
FQD1P50 FQU1P50 -500V, FQU1P50 | |
P-CHANNEL 400V 15A
Abstract: fqb1p50
|
Original |
FQB1P50 FQI1P50 -500V, FQI1P50TU O-262 P-CHANNEL 400V 15A | |
Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
Original |
FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 | |
FQB1P50
Abstract: FQI1P50
|
Original |
FQB1P50 FQI1P50 -500V, FQI1P50 | |
Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
Original |
FQD1P50 FQU1P50 -500V, FQD1P50TM O-252 FQD1P50TF | |
Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize |
Original |
FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 | |
GS 069
Abstract: FQB1P50 FQI1P50
|
Original |
FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 GS 069 FQI1P50 | |
|
|||
Contextual Info: FQP3P50 August 2000 QFET FQP3P50 TM 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQP3P50 -500V, | |
FQD3P50
Abstract: FQU3P50
|
Original |
FQD3P50 FQU3P50 -500V, FQU3P50 | |
Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD3P50 FQU3P50 -500V, FQU3P50TU O-251 FQU3P50 | |
Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQB3P50 FQI3P50 -500V, FQI3P50TU O-262 FQI3P50 | |
Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD3P50 FQU3P50 -500V, FQD3P50TF O-252 FQD3P50TM | |
fqp3p50Contextual Info: FQP3P50 August 2000 QFET TM FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQP3P50 -500V, fqp3p50 | |
FQP1P50Contextual Info: FQP1P50 June 2000 QFET TM FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQP1P50 -500V, FQP1P50 | |
Contextual Info: FQPF1P50 June 2000 QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQPF1P50 -500V, | |
FQB3P50
Abstract: FQI3P50
|
Original |
FQB3P50 FQI3P50 -500V, FQI3P50 | |
Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQB3P50 FQI3P50 -500V, FQB3P50TM O-263 |