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    500V P CHANNEL MOSFET Search Results

    500V P CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK090U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Datasheet
    TK5R3E08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Datasheet

    500V P CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    400v p-channel mosfet

    Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD3P50TM -500V, 400v p-channel mosfet PDF

    FQD3P50TM_F085

    Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD3P50TM -500V, FQD3P50TM_F085 PDF

    to-247 to-220 to-3p

    Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
    Contextual Info: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective


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    -100V -500V IXTA52P10P FQB34P10 IXTA52P10P -100V, O-263 to-247 to-220 to-3p IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P PDF

    FQD1P50

    Abstract: FQU1P50
    Contextual Info: QFET FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD1P50 FQU1P50 -500V, FQU1P50 PDF

    FQD1P50

    Abstract: FQU1P50
    Contextual Info: FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD1P50 FQU1P50 -500V, FQU1P50 PDF

    FQPF1P50

    Contextual Info: QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQPF1P50 -500V, FQPF1P50 PDF

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Contextual Info: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


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    OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA PDF

    FQD1P50

    Abstract: FQU1P50
    Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD1P50 FQU1P50 -500V, FQU1P50 PDF

    P-CHANNEL 400V 15A

    Abstract: fqb1p50
    Contextual Info: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB1P50 FQI1P50 -500V, FQI1P50TU O-262 P-CHANNEL 400V 15A PDF

    Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 PDF

    FQB1P50

    Abstract: FQI1P50
    Contextual Info: QFET TM FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB1P50 FQI1P50 -500V, FQI1P50 PDF

    Contextual Info: QFET TM FQD1P50 / FQU1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQD1P50 FQU1P50 -500V, FQD1P50TM O-252 FQD1P50TF PDF

    Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 PDF

    GS 069

    Abstract: FQB1P50 FQI1P50
    Contextual Info: QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


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    FQB1P50 FQI1P50 -500V, FQB1P50/FQI1P50 GS 069 FQI1P50 PDF

    Contextual Info: FQP3P50 August 2000 QFET FQP3P50 TM 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP3P50 -500V, PDF

    FQD3P50

    Abstract: FQU3P50
    Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD3P50 FQU3P50 -500V, FQU3P50 PDF

    Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQD3P50 FQU3P50 -500V, FQU3P50TU O-251 FQU3P50 PDF

    Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB3P50 FQI3P50 -500V, FQI3P50TU O-262 FQI3P50 PDF

    Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQD3P50 FQU3P50 -500V, FQD3P50TF O-252 FQD3P50TM PDF

    fqp3p50

    Contextual Info: FQP3P50 August 2000 QFET TM FQP3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP3P50 -500V, fqp3p50 PDF

    FQP1P50

    Contextual Info: FQP1P50 June 2000 QFET TM FQP1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQP1P50 -500V, FQP1P50 PDF

    Contextual Info: FQPF1P50 June 2000 QFET TM FQPF1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQPF1P50 -500V, PDF

    FQB3P50

    Abstract: FQI3P50
    Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB3P50 FQI3P50 -500V, FQI3P50 PDF

    Contextual Info: FQB3P50 / FQI3P50 August 2000 QFET TM FQB3P50 / FQI3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    FQB3P50 FQI3P50 -500V, FQB3P50TM O-263 PDF