500V 25A MOSFET Search Results

Contextual Info: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

Contextual Info: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

IXFR44N50Q3

Abstract: 44N50Q3
Contextual Info: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions

APT5017

Abstract: APT5017HLL
Contextual Info: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IRFY420C

Contextual Info: IRFY420C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)

4200pF

Abstract: IRFY420
Contextual Info: IRFY420 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 25A RDS(ON) = 0.23Ω Ω 1.0 (0.039)

APT0406

Abstract: APT0502
Contextual Info: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

APT0406

Abstract: APT0502
Contextual Info: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies

Contextual Info: APTM50A15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies

APT0406

Abstract: APT0502
Contextual Info: APTM50A15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Phase leg MOSFET Power Module 5 6 Application 11 • • • • Q1 7 8 Features 3 4 Q2 NTC • 9 10 1 2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies

Contextual Info: APTM50H15FT1G VDSS = 500V RDSon = 130mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 2 5 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

APT0406

Abstract: APT0502
Contextual Info: APTM50H15UT1G VDSS = 500V RDSon = 150mΩ typ @ Tj = 25°C ID = 25A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 2 6 1 Q2 Q4 7 9 8 11 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

500V 25A Mosfet

Abstract: by-pass
Contextual Info: TELEDYNE MICROELECTRONICS Power Hybrid, MOSFET, H-Bridge/Quad P/N 2294760 DESCRIPTION FEATURES The 2294760 contains four N-channel Enhancement ❖ Isolated metal hermetic power case mode high voltage power MOSFETs. Each output is coupled with a blocking Schottky diode to the drain

Contextual Info: TELEDYNE MICROELECTRONICS 47E D • 0^10103 0000L21 fl3fl ■ TEH TELEDYNE MICROELECTRONICS Power Hybrid, Full Bridge P/N 2294760 DESCRIPTION The 2294760 Power Hybrid contains four N-Channel Enhancement mode high voltage power MOSFETS. Each is coupled with a blocking Schottky diode on the drain and a

500V 25A Mosfet

Abstract: FCA50CC50 mosfet 500V 50A "MOSFET Module" mosfet vgs 5v E-761
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 M FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink

500V 25A Mosfet

Abstract: FBA50CA50 "MOSFET Module" FBA50CA45 B220G mosfet 500V 50A
Contextual Info: MOSFET MODULE FBA50CA45/50 UL;E76102 M FBA50CA45/50 is a dual power MOSFET module designed for fast swiching 2 devices are serial connected. The applications of high voltage and current. mounting base of the module is electrically isolated from semiconductor elements for

500V 25A Mosfet

Abstract: IRFV420 IRFY420
Contextual Info: bOE D m Ô1331Ô7 OODOSbO 55^ •SMLB SEMELAB PLC { SEMELAB IRFY420 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS □r ï£ FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE

Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 M F C A 5 0 C C 5 0 is a dual power M O S F E T module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink con­

FCA50BC50

Abstract: 500V 25A Mosfet
Contextual Info: MOSFET MODULE FCA50BC50 U L ;E 76102 M F C A 5 0 B C 5 0 is a dual power MOSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is elecjtjcally isolated from semiconductor elements for simple h g atsl^cp o n struction.

FCA50CC50

Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

FBA50CA45

Abstract: FBA50CA50
Contextual Info: MOSFET MODULE FBA50CA45/50 UL;E76102 （M） FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. （2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for

12v transformer

Contextual Info: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

FCA50CC50

Abstract: IG2U
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

"MOSFET Module"

Abstract: FBA50CA50 FBA50CA45
Contextual Info: MOSFET MODULE FBA50CA45/50 UL;E76102 （M） FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. （2 devices are serial connected.） The mounting base of the module is electrically isolated from semiconductor elements for