500IT Search Results

Contextual Info: Æ T S G S -T H O M S O N TEA6422 BUS-CONTROLLED AUDIO MATRIX • 6 STEREO INPUTS ■ 3 STEREO OUPUTS ■ GAIN CONTROL OdB/MUTE FOR EACH OUT­ PUT ■ CASCADABLE 2 DIFFERRENT ADDRESSES ■ SERIAL BUS CONTROLLED ■ VERY LOW NOISE ■ VERY LOW DISTORSION

Contextual Info: NEC fjPD42601 1,048,576 x 1-BIT SILICON FILE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The ¿/PD42601 silicon file is an economical mass storage device specifically designed to replace mag­ netic disk drives in silicon disk, solid-state recording,

REB500

Abstract: REC580 500PSM03 500SCM01 mvb bus schematics MVB Protocol converters SYS500 220V 5A Automatic Voltage Regulator GIS 110 kV 500BIM01
Contextual Info: Bay control terminal REC 580*3.0 1MRK 511 059-BEN Page 1 Issued September 1999 Changed since October 1998 Data subject to change without notice REC580_1.tif Features The bay control terminal REC 580 is a numerical control device for the automation of complex high-voltage substations. It is a product in

fct573a

Contextual Info: 573A S3 National ÆÆ Semiconductor 54FCT/74FCT573A Octal Latch with TRI-STATE Outputs General Description Features The ’FCT573A is a high-speed octal latch with buffered common Latch Enable LE and buffered common Output Enable (CE) inputs. • NSC 54/74FCT573A is pin and functionally equivalent

Contextual Info: rzr SGS-THOMSON ö TEA6420 *> 7£ BUS-CONTROLLED AUDIO MATRIX • 5 STEREO INPUTS ■ 4 STEREO OUPUTS ■ GAIN CONTROL 0/2/4/6DB/MUTE FOR EACH OUTPUT ■ CASCADABLE 2 DIFFERENT ADDRESSES ■ SERIAL BUS CONTROLLED ■ VERY LOW NOISE ■ VERY LOW DISTORSION

Contextual Info: ES, _ STV6411A AUDIO/VIDEO SWITCH MATRIX • l2C BUS CONTROL ■ STANDBY MODE VIDEO SECTION ■ 4 CVBS INPUTS, 3 CVBS OUTPUTS ONE WITH SELECTABLE CHROMATRAP FILTER ■ 4 Y/C INPUTS, 2 Y/C OUTPUTS ■ 6dB GAIN ON ALL CVBS/Y AND C OUTPUTS ■ 1 Y/C ADDER

Contextual Info: EL4095C ClflHlISC EL4095C FlfifeO Gttltl COTltTOl/FddCV/Mllltipl€X€T HIGH PERFORMANCE ANALOG INTiGRATEO CIRCUITS F eatu res G eneral D escription • F u ll function video fader • 0.02%/0.02° differential g ain / phase @ 100% gain • 25 ns m ultiplexer included

XR-2011

Abstract: XR2011 XR2013CN XR2013 XR-2012
Contextual Info: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

TDA7361

Contextual Info: r^ J SCS -THO M SO N TDA7361 LOW VOLTAGE NBFM IF SYSTEM • OPERATION FROM 1.8V TO 9V ■ LOW DRAIN CURRENT 4mA, Vs =4V ■ HIGH SENSITIVITY (-3dB input limiting at 3^V) ■ 8p,V INPUT FOR 20dB S /N ■ LOW EXTERNAL FAIR COUNT DIP16 ORDERING NUMBER : TDA7361

SN75417

Contextual Info: — 36- Dual Peripheral N AN D ★ 9 ★ BBŒ , X ★ PNP A t S Driver K -ft W M i 70V, 500mA 75 41 7 je m 4k a V oH Io^SOOmA V r k> V f(K> Ir = tpd 100 Q + 30pF lee V o=L MIN 55 70 0.8 lOOuA lF = 500mA tT n f' -ti L—»H H—*L L-*H H -L - TY P 100 1.25

power amplifier 12 GHZ

Abstract: GHz Power FET TGA8021 A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz
Contextual Info: MMC GaAs Products Device Selection Guide AMPLIFIERS FREQ DEVICE DESCRIPTION TG A 8014 6-18 GHz power amplifier TG A 8035 6-18 GHz general-purpose NOMINAL NOISE MISCELLANEOUS GAIN FIGURE FEATURES RANGE 6 -18 GHz 8 dB POWER @ 1 dBc 27 dBm to 14 GHz 14% Power-added

Contextual Info: Power Transistors 2SD2057 2SD2057 Silicon NPN Triple-Diffused Planar Type Package Dim ensions Horizontal Deflection Output U nit ! mm • Features 15-5 n 5. 2m a x. 6.9rr • D a m p e r d io d e b u ilt-in Epoxy resin • M in im iz e s e x te r n a l c o m p o n e n t c o u n ts a n d s im p lifie s c ir c u itr y

Contextual Info: Central' CBCP68 NPN CBCP69 PNP Semiconductor Corp. SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCP68, CBCP69 types are complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount

CJD200

Abstract: CJD210
Contextual Info: CJD200 CJD210 Central" NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200, CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current

OPI2152

Contextual Info: OPTEK-JECHNOLOGY INC OhE D | t^ESflO OOGOSSâ □ | O p to e le c tr o n ic s D iv is io n TRW Electronic Components Group Product Bulletin 5204 January 1985 19 8 7 Cost S a v e r Pro du ct! Call T R W fo r m ore in fo rm a tio n ! T~ - H 7 # ? iV I-2 3 ' _

500SCM01

Abstract: mvb bus schematics REC580 500BIO01 GIS 110 kV optical pickup unit connections EN 55011 GPS receiver transmitter module 500BOM01 1MRK511
Contextual Info: Bay control terminal REC 580*3.41 1MRK 511 076-BEN Page 1 Issued August 2002 Status: New Data subject to change without notice REC580_1.tif Features The bay control terminal REC 580 is a numerical control device for the automation of complex high-voltage substations.

74hc74an

Abstract: CD74HC74 74HC74 CI 74hc74 Current 74HCT74 74hc74 pin diagram CD54HC74 CD54HCT74 CD74HCT74 74HCT74 truth table
Contextual Info: Technical Data F ile N u m b e r CD54/74HC74 CD54/74HCT74 1476 High-Speed CMOS Logic HARRIS SEMICOND SECTOR 27E D a 4 302271 □ 017 51 b M HiHAS Dual D Flip-Flop with Set and Reset Positive-Edge Trigger T yp e Features: GMO * PIN 7 9 2 C S -3 6 9 S 5 B I

C1P TRANSISTOR

Abstract: CMPT2222A LB-215
Contextual Info: Central Semiconductor Corp. CMPT2222A DESCRIPTION: NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,