5.9 GHZ POWER AMPLIFIER Search Results

802.11a Amplifier

Abstract: MMIC marking 77 HMC415LP3
Contextual Info: HMC415LP3 / 415LP3E v03.0605 LINEAR & POWER AMPLIFIERS - SMT 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm

RFS1003

Abstract: 5850MHZ
Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the

12w 94

Contextual Info: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

5.9 GHz power amplifier

Contextual Info: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGA-25203

Abstract: MGA-25203-BLKG 58GH
Contextual Info: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

Contextual Info: < C band internally matched power GaAs FET > MGFC42V5964 5.9 – 6.4 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC40V5964 5.9 – 6.4 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC36V5964A 5.9 -6.4 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet The SST11CP15 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-linearity, high-efficiency applications with superb power-added efficiency while operating over the 4.9-5.9 GHz

Contextual Info: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC39V5964A

Contextual Info: < C band internally matched power GaAs FET > MGFC39V5964A 5.9 – 6.4 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

AM42-0040

Abstract: CR-15
Contextual Info: GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 AM42-0040 GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ.

Contextual Info: HMC415LP3 / 415LP3E v03.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN

Contextual Info: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

GF38

Abstract: MGFC4
Contextual Info: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

HMC415

Contextual Info: HMC415LP3 v01.0702 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB • 802.11a WLAN 3.7% EVM @ Pout = +15 dBm

Contextual Info: < C band internally matched power GaAs FET > MGFC42V5964A 5.9 – 6.4 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: HMC415LP3 / 415LP3E v03.0605 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN

Contextual Info: HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 4.9 - 5.9 GHz applications: Gain: 20 dB 34% PAE @ Psat = +26 dBm • 802.11a WLAN 11 • HiperLAN WLAN

Contextual Info: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic