5.0A 503 Search Results

TUF508

Abstract: D0-201AD TUF501 Ultra Fast Recovery Rectifier
Contextual Info: 5.0A Ultra Fast Recovery Rectifier TUF501 – TUF508 5.0A Ultra Fast Recovery Rectifier Features • • • • • • Low forward voltage drop High current capability High reliability High surge current capability High speed switching High temperature soldering guaranteed: 250°C/10 seconds

752r

Abstract: 752-R
Contextual Info: ADVANCED POWER TECHNOLOGY MTE D • □eST'ID'l DDODMIS flflT « A V P A dvanced ROWER -T-3A-13 Te c h n o l o g y o D 8 6 APT802R4AN 800V 5.0A 2.40 Ü. APT752R4AN 750V 5.0A 2.40 Ü APT802R8AN 800V 4.5A 2.80 Q APT752R8AN750V4.5A2.80 £2 s POWER MOS IV

Contextual Info: A d van ced O D po w er Te c h n o l o g y • APT802R4BN APT752R4BN APT802R8BN APT752R8BN O s POWER MOS IV< 800V 750V 800V 750V 2.40Í2 2.4012 2.8012 2.8012 5.5A 5.5A 5.0A 5.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.

802R4BN

Abstract: 752r 802R4 APT752R4BN APT752R8BN APT802R4BN APT802R8BN
Contextual Info: A D V A N C ED PO W ER Te c h n o l o g y O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN O S POWER MOS IVe 800V 750V 800V 750V 5.5A 5.5A 5.0A 5.0A 2.40Q 2.40Q 2.80Q 2.80Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.

Contextual Info: A D V A N C ED PO W ER T e c h n o lo g y 9 O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN Ô S POWER MOS IVe 800V 750V 800V 750V 2.4011 2.40Q 2.80Q 2.8Oil 5.5A 5.5A 5.0A 5.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tr = 25°C unless otherwise specified.

APT802R4BN

Abstract: 100MS 802R4BN
Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT802R4BN APT752R4BN APT802R8BN APT752R8BN O S Î 3ÏW E R M O S P E 5.5A 5.5A 5.0A 5.0A 800V 750V 800V 750V 2.40ft 2.4012 2.80ft 2.80ft N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POWER TE CH N0 L 06 Y blE J> • ADVANCED P o w er Te c h n o l o g y ?D S 0257=10=1 OOOOSOl 3b1 H J W P ® O S POWER MOS IV APT601R3GN APT551R3GN APT601R6GN APT551R6GN 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30Q 1.30Q 1.60Q 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

1002R4CN

Contextual Info: AD VA N C E D POW ER T E C H N O L O G Y blE D • OEST'ìCH 0 0 0 0 7 0 5 3S1 H A V P A dvanced R o w er Te c h n o l o g y n A i<ifr-n .« r> „ POWER MOS IV™ APT1002RCN APT902RCN APT1002R4CN APT902R4CN 1000V 900V 1000V 900V 5.5A 5.5A 5.0A 5.0A

Contextual Info: HER501 thru HER508 High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 5.0A Feature * Plastic package has Underwriters Laboratory * * * * * * * * Flammability Classification 94V-0 High temperature metallurgically bonded construction Deffused junction

HER508

Abstract: HER501 HER501-T3 HER501-TB HER502-T3 HER505 HER506
Contextual Info: HER501 – HER508 WTE POWER SEMICONDUCTORS 5.0A HIGH EFFICIENCY RECTIFIER Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: Molded Plastic

Diode HER 507

Abstract: HER508 diode HER 507 diode DO-201AD diode her505 HER501 HER501-T3 HER501-TB V/HER508 diode HER505
Contextual Info: HER501 – HER508 WTE POWER SEMICONDUCTORS Pb 5.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic

Contextual Info: HER501 – HER508 5.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

1N6079

Abstract: 1N6080 1N6081 5FF05 5FF10 5FF15 1N6081 JANTX
Contextual Info: SEMTECH SÛE CORP D • 613^131 SUPERFAST RECOVERY ■ 1N6079 1N6080 1N6081 5FF05 5FF10 5FF15 • Vr = 5 0 - 150V • If = 5.0A • trr = 30nS • Vf = 0.97V Very low reverse recovery time Hermetically sealed in Metoxilite fused metal oxide Low switching losses

her508

Abstract: Diode HER 504
Contextual Info: HER501 – HER508 WTE POWER SEMICONDUCTORS Pb 5.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic

YC-160R

Abstract: CN71 B3P-5-VH SVH-21T-P1.1 hand crimping tool chassis fg ZWQ130-5225 SXH-001T-PO.6 CN52 LAMBDA over Voltage MARKING JM
Contextual Info: LAMBDAA Z W Q - series DENSEI-LAMBDA Quad output 80W - 130W Model name ZWQ 80-5225/ ! Series Name O utp ut V oltage O utp ut W a ttag e O ption blank: P C 8 type I ; L-shape m stal plate type A : w ith -c o v e r typ e • PC Board Type Power Supply • Features

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

Contextual Info: MCOTS-C-28-40-HP Single Output Half-brick MILITARY COTS DC-DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 40V Output 5A Output 92% @ 2.5A / 90% @ 5A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings

10MA120

Contextual Info: SR50X G Y WW SR50X GYWW Type Number Symbol = = = = Specific Device Code Green Compound Year Work Week SR SR SR SR SR SR SR SR SR 502 503 504 505 506 509 510 515 520 Units Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 200 V Maximum RMS Voltage

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

Contextual Info: MCOTS-C-28-24-QT Single Output Quarter-brick MILITARY COTS DC/DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 24V Output 5A Output 90% @ 2.5A / 90% @ 5A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings

Contextual Info: MCOTS-C-28-24-QT Single Output Quarter-brick MILITARY COTS DC-DC CONVERTER 16-40V Continuous Input 16-50V Transient Input 24V Output 5A Output 90% @ 2.5A / 90% @ 5A Efficiency Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC-DC converters brings