752r
Abstract: 752-R
Contextual Info: ADVANCED POWER TECHNOLOGY MTE D • □eST'ID'l DDODMIS flflT « A V P A dvanced ROWER -T-3A-13 Te c h n o l o g y o D 8 6 APT802R4AN 800V 5.0A 2.40 Ü. APT752R4AN 750V 5.0A 2.40 Ü APT802R8AN 800V 4.5A 2.80 Q APT752R8AN750V4.5A2.80 £2 s POWER MOS IV
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-t-3a-13apt802r4anapt752r4anapt802r8an+5apt752r8an750v4100msapt802r4/802r8an752r752-r
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BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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ad818ad818diead820ad821+12ad820dieo-204aa/to-3bd119bc148aapt1002rbnr1000 volt npnbd109apt5025anapt904r2bnbd107apt1001r3anapt1004rbnr
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transient Diode bge
Abstract: sml752r4an
Contextual Info: _ SEMELAB 8133107 bGE D PLC 0 D 0 07 Ö E MH “ ISriLB 751 MOS POWER 4 M H “ SML802R4AN SML752R4AN SML802R8AN SML752R8AN SEME LAB 800V 750V 800V 750V 5.0A 5.0A 4.5A 4.5A 2.40Q 2.4012 2.8012 2.8012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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sml802r4ansml752r4ansml802r8ansml752r8an+7802r4an752r8an802r8an752r4an100mssml802r4/802r8antransient diode bge
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