5 V SERVO Search Results

Contextual Info: Actuator Terminal Blocks for M agnetic Valves, Servom otors etc. 0.08 - 2 .5 m m 400 V /6 kV/3, 20 A O 250 V /4 kV/3, 20 A O AWG 28 - 12 300 V, 15 A W 300 V, 15 A a Terminal block width 5 mm / 0.197 in O 0.08 - 2 .5 m m 2 AWG 28 - 12 125 V /5 A © 250 V; 6.3 A TO

Contextual Info: SEMIKRON INC 3bE D • Ûl3bb71 QDG2S11 3 M S E K G SEMIKRON Absolute Maximum Ratings Symbol Vos V dgr Id I dm V gs Pd T|,Tstg Visol humidity climate Values Units 500 500 9 36 ±20 125 - 5 5 . . . + 150 2 500 Class F 5 5 /1 5 0 /5 6 V V A A V W °C V 9 36

VM775

Abstract: vtc vm VTC, VM VM VTC 24-lead
Contextual Info: V M 7 7 5 0 /V M 7 7 5 0 F 2, 4, 6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER WITH MULTIPLE SERVO WRITE CAPABILITY 950801 PRELIMINARY FEA TU R ES CON NECTION DIAGRAMS High Performance - Read Gain = 300 V/V Typical - Input Noise = 0.49nV/VHz Typical

SKM254F

Abstract: skm 254 f
Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Values Units 500 500 35 140 V V + 20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6 V W Conditions ' V ds V dgr Id Idm V gs Pd Tj, Tstg Visol AC, 1 min, 2 0 0 iA humidity climate D IN 40 040 DIN IEC 6 8 T .1

IXGH40N30

Abstract: high current igbt
Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient

Contextual Info: SIE » a i 3 bb?l □□□3 bGt. a?b « S E K G • se MIKRD n SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Values Units 1000 1000 28 110 ±20 700 - 5 5 . . .+ 150 2 500 Class F 5 5 /1 5 0 /5 6 V V

Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' Values Units 50 V 50 V V ds V dgr Res = 2 0 kQ Tease = 5 5 °C 200 A I dm 600 A V gs ±20 V Id Pd Tj, Tstg Visol A C , 1 min humidity climate D IN 4 0 0 4 0 400 W - 5 5 . . .+ 1 5 0 °C V 2 500 SEMITRANS M

SKM284F

Abstract: SKM284 SKM 284 f
Contextual Info: s e m ik r o n Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd humidity climate 800 800 20 80 ±20 400 - 5 5 . . .+150 2 500 Class F 5 5 /1 5 0 /5 6 V V C onditions ’ R gs = 20 ki2 Tj, Tstg Visol Values Units AC, 1 min, 200 nA DIN 40 040 DIN IEC 68 T.1

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM200CSA060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. UFo 3. Up 4. V upi 5. V vpc 6. VFo 7. V p 8. V v pi 9. V wpc 11. W p 12. V wpi 13. V nc 14. V ni 1 5 .NC 16. U N 17. V N 18. W n 19.FO 10. WFo Description: U -Z > 5

Contextual Info: A N A LO G D E V IC E S High Precision Voltage Reference AD588* FEATURES Low Drift - 1.5ppm/°C Low Initial Error - Im V Pin-Programmable Output + 10V, + 5 V , ± 5 V Tracking, - 5 V , - 1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense

Contextual Info: ANALOG DEVICES High Precision Voltage Reference AD588* FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Programmable Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense

transistor 8331

Abstract: AD583BD AD588BD AD588TQ rtd with wheatstone bridge K4515 AD588 AD588AQ AD588JQ AD588SE
Contextual Info: ANALOG ► DEVICES High Precision Voltage Reference FUNCTIONAL BLOCK DIAGRAM FEATURES Low Drift: 1.5 ppm/°C Low Initial Error: 1 mV Pin-Program m able Output +10 V, +5 V, ± 5 V Tracking, - 5 V, -1 0 V Flexible Output Force and Sense Terminals High Impedance Ground Sense

Contextual Info: V T C INC b4E D V T C In c. Value the Customer ’ =1368^2^ 0 0 0 3 ^ 2 5 TOfl VM7114 2 OR 4-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY TWO/THREE TERMINAL & SERVO PREAMPLIFIERS FEATURES • High Performance - Read Gain = 200 V / V _

Contextual Info: s e M IK R O n Absolute Maximum Ratings Symbol Conditions Values Units 1 1200 1200 2 90 / 200 V V A 5 80 / 400 ±20 1350 - 4 0 . + 150 125) 2500 Class F 4 0 /12 5 /5 6 A V W °C V 1 9 5 /1 3 0 5 80 / 400 1450 10 500 A A A A2s V cE S lc R Ge = 20 T oase = 25 /85 °C

Contextual Info: Multiple Range, 16-/12-Bit, Bipolar/Unipolar, Voltage Output DACs AD5761/AD5721 Data Sheet FEATURES GENERAL DESCRIPTION 8 software-programmable output ranges: 0 V to 5 V, 0 V to 10 V, 0 V to 16 V, 0 V to 20 V, ±3 V, ±5 V, ±10 V, −2.5 V to +7.5 V; 5% overrange

SKM151F

Abstract: skm 151 mosfet
Contextual Info: s e MIKRO n 500 V SEMITRANS M Power MOSFET Modules SKM 151 F 500 V • Discontinued 1998 56 224 A A Absolute Maximum Ratings Symbol Conditions V ds V dgr Res Values ' = 2 0 ki2 Id Id m V gs Pd Tj, Tstg Visol humidity climate Units ±20 V 700 W 5 5 . . .+ 1 5 0

Contextual Info: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90

q5t3

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C

6008B

Contextual Info: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C

Contextual Info: Öl3bb71 DDG3ti32 Tbfl « S E K G S1E » - SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol Conditions V ds V dgr R g s = 20 k£i 1000 1000 18 72 ±20 400 - 5 5 . . + 1 5 0 2 500 Class F 55/150/56 V V A A V W °C V 18 72 A A ' Id Idm V gs Pd

50N6

Abstract: 50N60A IXGH50N60A
Contextual Info: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous

50L2

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING • V d s s .2 5 0 V • rDS ON (MAX) .0.31 Q

c2555

Abstract: IC IGBT 25N120 25N120
Contextual Info: OIXYS IGBT L o w CES IXGH 25N120 IXGH 25N120A v CE s„ , High speed Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C 1200 V V CGR T ,J = 25° C to 150° C; RrF = 1 MQ Gt 1200 V V GES Continuous +20 V V GEM Transient +30 V ^C25 Tc = 2 5 °C 50 A T c = 9 0 °C

Contextual Info: s e MIKRON 500 V SEMITRANS M Power MOSFET Modules SKM 151 F 500 V • Discontinued 1998 56 A A Absolute Maximum Ratings Symbol Conditions Values V ds V dgr R q s = 2 0 ki2 Id Units I DM 224 V gs ±20 V Pd Tj, Tstg 700 W Visol humidity climate 5 5 . . .+ 1 5 0