5 MM INFRARED DIODE Search Results

CQY99

Abstract: TFK 940 isd 1790 TFK u 116 diode tfk TFK diode TFK 925 Tfk 508
Contextual Info: CQY99 Galliumarsenid-Lumineszenzdiode G aAs Infrared Emitting Diode Anwendung: S trahlungsquelle im nahen Infrarot-B ereich Application: Radiation source in near infrared range Besondere Merkmale: Features: 0 5 mm • Kunststoffgehäuse 0 5 mm • Plastic case

TPS601

Abstract: "Smoke Sensor" TLN201 TPS601A TPS708
Contextual Info: TOSHIBA TLN201 TOSHIBA INFRARED LED GaAÍAs INFRARED EMITTER TLN201 Unit in mm INFRARED LED FOR FOR PHOTO SENSOR ! 5 .8 M A X OPTO-ELECTRONIC SWITCH ^ + Ö -1 0 4 . 7 - 0.15 TAPE, CARD READER oo '+ ' SMOKE SENSOR INFRARED RAYS APPLIED EQUIPMENT 3.4 5 ± 0 .1

Contextual Info: SIR-5682ST3F GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features

GaAs 1000 nm Infrared Diode,

Contextual Info: GaAs infrared light-emitting diode SIR-5682ST3F This infrared GaAs LED is housed in a compact, transparent, 5 mm plastic housing. It radiates at a wavelength of 850 nm for use with most optical voice or data transmission systems. Dimensions U n its: mm Features

Contextual Info: NEC GaAs INFRARED LIGHT EMITTING DIODE FEATURES DESCRIPTION_ • SMALL SIZE PLASTIC MOLDED T h e S E 3 0 4 is a G aA s Gallium Arsenide Infrared LED in a 5 x 5 x 3 .2 5 mm plastic molded package. It is very suitable as a detector of a

TSHA520

Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
Contextual Info: TSHA520. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA520

Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202 TSHA6203
Contextual Info: TSHA620. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8389 The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA550

Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
Contextual Info: TSHA550. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

TSHA550

Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
Contextual Info: TSHA650. Vishay Semiconductors ¾ GaAlAs Infrared Emitting Diodes in ø 5 mm T–1 Package Description 94 8389 The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TLN212 T O SH IB A TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN21 2 INFRARED LIGHT EMISSION DIODE FOR STILL CAMERA U n it in mm LIGHT SOURCE FOR AUTO FOCUS 4 .5 ± 0 .3 2.3 4.5 ± 0 .3 r • / Optical radiation of current confining LED chip is condensed by

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1285H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

VTE1261

Abstract: VTE1262 VTE1281-1 VTE1281-2
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1261, 1262 T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high

VTE1295

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295 T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

Contextual Info: TSUS520. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are

Contextual Info: TSUS540. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

VTE1295H

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1295H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

VTE1261H

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1285H T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high

VTE1285

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1285 T-1¾ 5 mm Bullet Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

Contextual Info: TSUS540. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are

Contextual Info: TSUS520. VISHAY Vishay Semiconductors GaAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description TSUS520. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are