TLN21 Search Results

TLN217

Contextual Info: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

TLN217

Contextual Info: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

Contextual Info: TO SH IB A TLN212 TOSHIBA INFRARED LED GaAiAs INFRARED EMITTER TI N 1 1 1 m • 'm INFRARED LIGHT EMI5SION DIODE FOR 5TILL CAMERA U nit in mm LIGHT SOURCE FOR AUTO FOCUS 4.5 ± 0 .3 4.5 ± 0 .3 • Optical radiation of current confining LED chip is condensed by

TLN212

Contextual Info: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. •

TLN210

Contextual Info: TLN210 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN210(F) Lead Free Product Infrared Light-emission Diode For Still Camera Light Source For Auto Focus Unit: mm • Optical radiation of current confining LED chip is condensed by a resin lens. • High output

TLN210

Contextual Info: TOSHIBA TLN210 TOSHIBA LED LAMP GaAMs INFRARED EMITTER TLN21 0 Unit in mm Infrared light emission diode for still camera Light source for auto focus 4.5 + 0.3 • • • • • • Optical radiation of current confining LED chip is condensed by a resin lens.

TLN212

Contextual Info: TOSHIBA TLN212 T O S H IB A IN FR A R ED LED G a A ÍA s IN FR A R ED EM ITTER TLN21 2 Unit in mm IN FR A R ED LIG HT E M ISSIO N D IO D E FOR STILL C A M E R A LIG H T SOURCE FOR A U T O FOCUS 4 .5 ± 4 .5 ± r • Optical radiation of current confining LED chip is condensed by

Contextual Info: TLN210 TOSHIBA TOSHIBA LED LAM P i t• G aA iA s INFRARED EMITTER n ■ 'm 11 n Infrared light emission diode for still camera U nit in mm ght source for auto focus 4.5 + 0.3 £ — 00 t[ ^ i r. .0 Large output 2.3 CO Ö + Optical radiation of current confining LED chip is condensed by

TLN212

Contextual Info: TO SH IBA TLN212 TOSHIBA INFRARED LED GaAÍAs INFRARED EMITTER TLN212 INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA Unit : mm LIGHT SOURCE FOR AUTO FOCUS 4.5 + 0.3 4.5 ± 0.3 r -• • High output • Effective emission diameter of 388 X 296 /¿m

TLN210

Contextual Info: TO SH IBA TLN210 TOSHIBA LED LAMP G aAM s INFRARED EMITTER TLN210 Unit : mm INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS 4.5 ± 0.3 4 .5 1 0 .3 • Optical radiation of current confining LED chip is condensed by a resin lens.

Contextual Info: GaAs INFRARED EMITTER TLN211 TLN211 INFRARED LIGHT EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS U nit in mm 4.5±0.3 I- • Resin Package with Dome Lens • Virtual Emission Spot Size : D744/mi • Emission Angel 0.842sr(9= ±30°) • .

Contextual Info: T O SH IB A TLN210 TOSHIBA LED LAMP GaAM s INFRARED EMITTER TLN21 0 Unit in mm Infrared light emission diode for still camera ight source for auto focus Optical radiation of current confining LED chip is condensed by a resin lens. Large output Effective emission diameter is 348/^m

Contextual Info: TLN212 T O SH IB A TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN21 2 INFRARED LIGHT EMISSION DIODE FOR STILL CAMERA U n it in mm LIGHT SOURCE FOR AUTO FOCUS 4 .5 ± 0 .3 2.3 4.5 ± 0 .3 r • / Optical radiation of current confining LED chip is condensed by

TLP805

Abstract: TLP806 TLP834 TLRA280
Contextual Info: lü.General Index TYPE No. TLN101A TLN102 TLN103A TLN104 TLN104 LB TLN105B TLN107A TLN108 TLN110 TLN113 TLN115A TLN117 TLN119 TLN201 TLN203 TLN205 TLN208 TLN210 TLN211 TLN212 TLN221 TLN222 TLN223 TLN224 TLN225 TLN226 TLN227 TLP507A TLP800A TLP801A TLP802

GaAs 850 nm Infrared Emitting Diode

Abstract: TLN217
Contextual Info: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip.

TLP834

Abstract: TLP1200 automatic door infrared sensor robot with wireless camera TLP816 wireless door BELL PRINTER POSITION SENSOR TLRA280 washing machine door lock TLP832
Contextual Info: 9 . Application Example of Photo Sensors 9-1 Application to optical rem ote-control systems Infrared LED Photo Diode TLN105B TPS703 TLN115A TPS704 TPS705 TPS706 37 9-3 Application to Printers Paper Paper Sensor IPaper feed Detection] iìnk/Ribbon End Detection]

TOLD2000fDA

Abstract: TCD2703ADG TCD1709DG TCM8230 tyco igbt module 25A TOLD2000MDA TLSU225 TOLD2000 TLP250 MOSFET DRIVER application note TLYH180PF
Contextual Info: Optical Semiconductor Devices Visible Laser Diodes z 146 Visible LEDs z 147 Photo Sensors z 156 Photo Couplers & Photo Relays z 159 Fiber-Optic Devices TOSLINK z 186 Image Sensors z 190 145 Visible Laser Diodes Maximum Ratings (Tc = 25°C) Optical output

TC4009BP

Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Contextual Info: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

JAPAN P832

Abstract: TLP910 TLP1214A p832 TLP1230 tps604 toshiba p833 tps607 78/JAPAN P832 TPS819
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 光センサ SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / Contents 1. 品番索引 ……………………………………………… 2 2. 新製品ダイジェスト ………………………………… 3

TLP806

Abstract: TLP815 TLP805
Contextual Info: Photo Diode E le c tro -o p tic a l C h a ra c te ris tic s T a -2 5 ° C C la ssific a tio n T y p e No. Package is c (MA) E (m W /em 2) Id M A X (nA) Vr (V) Vn (V) *7 (deg) V isit* » Lig ht Cut-o ff M a tc h e d 1RED TLN101A 05 Package M etal TPS708

photo switch p832

Abstract: TLN100 TLP1214A TLP1200 p832 wireless headphones DVD optical pick-up assembly TLP910 JAPAN P832 optical sensor VISIBLE LIGHT MATRIX
Contextual Info: 2008-3 PRODUCT GUIDE Photosensors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Contents 1. Part No. Index . 2 8. Application Examples .14 2. New Product Digest . 3

TCD2703ADG

Abstract: transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606
Contextual Info: Sensors/Image Pickup Devices Photo Sensors z 274 Image Sensors z 280 Magnetic Sensors z 283 273 Photo Sensors Infrared LEDs and Visible LEDs for Sensor Application Electrical/Optical Characteristics Ta = 25°C Part Number Radiant intensity (mW/sr) Features

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

TLN105A

Abstract: TLN111 tln109 TLN216 TLN115 LD 25 V tln206 TOSHIBA TPS708 tps613 TLN103
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO ~TD dF J ^ C H T E S D D D lS T f lG D TOSHIBA Photo Sensors EMITTERS C H A R A C T E R IS T IC S ^ =25“C) CATEGORY T Y P E NO. PACKAGE PHOTO OUTLINE (Unit in mm) TLN101A Po If Ap (nm) e (deg) 50 950 8 20 50 950 16 35 50 880