TSHA650 Search Results
TSHA650 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSHA650. | Vishay Siliconix | GaAlAs Infrared Emitting Diodes in 5 mm (T-1 3/4)Package | Original | 89.16KB | 6 | ||
| TSHA650 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in f 5 mm (T-13/4) Package | Original | 89.16KB | 6 | ||
| TSHA6500 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 | Original | 5 | |||
| TSHA6500 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | ||
| TSHA6501 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | ||
| TSHA6502 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 | ||
| TSHA6503 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.16KB | 6 |
TSHA650 Price and Stock
Vishay Intertechnologies TSHA6500870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHA6500 | 12,000 |
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Get Quote | |||||||
tfk TSHA6501870 NM, GAALAS DOUBLE HETERO HIGH SPEED INFRARED EMITTING DIODE Infrared LED, 5mm, 1-Element, 875nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHA6501 | 12,000 |
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Get Quote | |||||||
Vishay Intertechnologies TSHA6503/T1 3/4INSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSHA6503/T1 3/4 | 3,218 |
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Get Quote | |||||||
TSHA650 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSHA650. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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tsha650tsha55018-jul-08 | |
TSHA6500Contextual Info: TSHA6500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage |
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tsha65002002/95/ec2002/96/ec18-jul-08 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
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Contextual Info: TSHA650. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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tsha650tsha550d-7402511-may-04 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
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tsha6500tsha6501tsha6502tsha6503+4 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec11-mar-11 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec2002/95/ec+3 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha550d-7402520-may-99+4 | |
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Contextual Info: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24° |
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tsha65002002/96/ec200/95/ec2011/65/eu+2 | |
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Contextual Info: TSHA650. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8389 The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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tsha650tsha550d-7402520-may-99 | |
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Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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tsha650tsha550d-7402508-apr-04 | |
TSHA550
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502 TSHA6503
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tsha650tsha55008-apr-05tsha6500+3 | |
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TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
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tsha6500tsha6501tsha6502tsha6503+4 | |
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Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
Original |
tsha650tsha550d-7402511-may-04 | |
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Contextual Info: TSHA650. VISHAY Vishay Semiconductors GaAlAs Infrared Emitting Diodes in ∅ 5 mm T-1¾ Package Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
Original |
tsha650tsha550d-7402511-may-04 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
CQX48B
Abstract: IR Emitters "IR Emitters"
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OCR Scan |
cqy36ncqy37ntsus4400cqx48b+7 | |
ic 8746Contextual Info: Tem ic TSHA 650 Semiconductors GaAlAs Infrared Emitting Diodes in 05 mm T -l3/4 Package Description The TSHA 650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, m olded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature aboiit 70 % |
OCR Scan |
tsha550d-7402515-jul-96ic 8746 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
TSHA550
Abstract: TSHA6500 TSHA6501 TSHA6502 TSHA6503 phototransistor
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tsha550d-7402515-jul-96tsha6500+4 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-sep-08diode sr 360iec 6247160825-1+7 | |