5 CT TRANSISTOR Search Results

Diode marking CODE 1M

Abstract: transistor marking 1f BC847AT BC847AT-7-F BC847BT BC847CT BC857AT
Contextual Info: BC847AT, BT, CT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Die Construction Complementary PNP Types Available BC857AT,BT,CT Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 4 and 5)

tf5r21zz

Abstract: IT43 DIT21
Contextual Info: Dl-T Transistor Transform ers TYPICAL W E IG H T 1 / 1 5 O Z . Locating Line 1 Type No. M IL Type D I-T44 TF5R 21ZZ Pri. Im p. f i 8 0 CT m a D .C .f in Pri. 12 1 0 0 CT 10 SO U R C E LO A D Sec. Im p . f i 3 2 s p lit 1 5 0 CT 14 500 C o u p lin g 600 20

a2 2505-5

Abstract: 2N4416 HA-2505 HA-2515 HA3-2505-5 HP5082-2810 FN2890 pc 2505
Contextual Info: HA-2505 CT ODU ODU CT R P PR TE O LE U TE O B S U B S TI T 5 S -252 IBLEData HASheet O SS P 12MHz, High Input Impedance, Operational Amplifier May 2003 Features • Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V/µs HA-2505 is an operational amplifier whose design is

2N3053

Contextual Info: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:

Contextual Info: DATA SHEET_ NEC MOS FIELD EFFECT TRANSISTOR 2SK3355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T he 2 S K 3 3 5 5 is N -ch an nel M O S Field E ffe ct T ra n sisto r PART NUMBER PACKAGE

WT5703

Abstract: WT5705 westinghouse capacitor westcode Inverter Diode hawk* 500v Westinghouse diode westinghouse transistors WT5706 westinghouse 300a Westcode Semiconductors
Contextual Info: WESTCODE S E M I C ON DU CT OR S 41 DE 1 ^ 7 0 ^ 5 5 OODlöOa 7 T - f WESTCODE ® SEMICONDUCTORS - . Technical Publication WT5703/06 Issue 1 February 1981 High Power Transistor Types WT5703 to WT5706 • 150kW Switched Power • 300 Amperes Continuous • 500 Volts Sustaining Voltage

ca555

Abstract: datasheet mc1555 MC1555 MC1555 datasheet ICM755 CA0555E LM555C CA555C LM555 HARRIS ICM7555
Contextual Info: CA555, CA555C, LM555C T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 5 S 5 5 E 7 L ICM SSIB Semiconductor December 1999 File Number 834.6 PO 1 • Accurate Timing From Microseconds Through Hours • Astable and Monostable Operation • Adjustable Duty Cycle

702 Z TRANSISTOR

Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701
Contextual Info: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS

2SD0601A

Abstract: 2SD601A XP01501 XP1501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01501 (XP1501) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 5 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SD1915F

Abstract: XP04506 XP4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SD0601A

Abstract: 2SD601A XP06501 XP6501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06501 (XP6501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

22K1-02

Abstract: 2SD0601A 2SD601A XP02501 XP2501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02501 (XP2501) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 5 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SD0601A

Abstract: 2SD601A XP05501 XP5501
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP05501 (XP5501) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SD1915

Abstract: 2SD1915F XP04506 XP4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB0709A

Abstract: 2SB709A XP04401 XP4401
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04401 (XP4401) Silicon PNP epitaxial planar type 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

transistor 356 j

Abstract: MARKING W2 SOT23 TRANSISTOR
Contextual Info: SAMS UN G SE MIC ONDU CT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR —— — — ;-: [T~<2q~ i<v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ‘ i Characteristic | Collector-Base Voltage

YTF540

Abstract: 16845 ip27a 316a2 In15A
Contextual Info: TOSHIBA {DISCRETE/OPTO} D e | TOTVSSD 9097250 TOSHIBA ÍDISCRETE/OPTO 99 D 16844 T - 2 ? -/3 □Dlbfl44 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA CT-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: STS05DTP03 Dual NPN-PNP complementary bipolar transistor Features • High gain ■ Low VCE sat ■ Simplified circuit design ■ Reduced component count 5 ) s ( ct 8 4 u d o 1 Applications ■ Push-pull or Totem-Pole configuration ■ MOSFET and IGBT gate driving

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF187 MRF187R3 MRF187SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

2SK3539

Abstract: XP04878
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04878 Silicon N-channel MOSFET For switching 5 0.12+0.05 –0.02 4 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w

2SC3904

Abstract: XP06543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SK3539

Abstract: XP01878 XP018
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01878 Silicon N-channel MOSFET (0.425) Unit: mm 0.20±0.05 4 1.25±0.10 2.1±0.1 5 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

Contextual Info: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT OR 27E D • 4 3 0 5 5 7 1 Oül^flüT 7 H I H A S ‘T - 3 3 - 1 3 ' High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS High-Power Devices for Applications in

2SC3904

Abstract: XP06543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b