4X128 Search Results

gw 360

Contextual Info: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,

128*64

Abstract: transistor GW 93 H GW 94 H
Contextual Info: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address

Contextual Info: EDI9F416128C 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

Contextual Info: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High

Contextual Info: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,

EDI2CG472128V

Contextual Info: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)

Contextual Info: ^EDI EDI2KG432128V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128K x32 Synchronous The EDI2KG 432128VxxD is a S ynchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­

GW 94 H

Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
Contextual Info: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module

GW 94 H

Abstract: A015 EDI2GG464128V ICC3-400
Contextual Info: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight

14566

Abstract: EDI9F416128C100BNC EDI9F416128C70BNC EDI9F416128C85BNC EDI9F416128LP70BNC
Contextual Info: EDI9F416128C 4x128Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION • 4x128Kx16 bit CMOS Static The EDI9F416128C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR-4 substrate. • Random Access Memory

EDI2CG472128V

Contextual Info: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through • 4x128K x72 Synchronous, S ynchronous Burst • Flow-Through A rchitecture • Linear and Sequential Burst Support via MODE pin DIMM 168 contacts Module, organized as 4x128Kx72.

vinavil 59

Abstract: TME 57
Contextual Info: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs

Contextual Info: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module

Contextual Info: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga­

00z1

Contextual Info: ^EDI EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM •ELECTRONIC DESISM5, INC 4x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchro­ Flow-Through Architecture

Contextual Info: MEk EDI9F416128C ELECTRONIC DESIGNS, NC.I 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs

Contextual Info: White Electronic Designs W3EG72514S-JD3 ADVANCED* 4GB - 4x128Mx72 DDR SDRAM REGISTERED ECC w/PLL DESCRIPTION FEATURES Double-data-rate architecture The W3DG72514S is a 4x128Mx72 Double Data Rate SDRAM memory module based on DDR SDRAM components. The module consists of eighteen 2Gb DDR

ED12KG

Abstract: EDI2KG
Contextual Info: ^EDI EDI2KG 418128V 1 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­

NI TB-2640

Abstract: 16x16 LED Matrix ribbon bte samtec TB-2641 TB-2644 16x16 LED Matrix led matrix 16X32 led matrix 16X16 led matrix 16X32 PXI-4070 8X64
Contextual Info: High-Density Multiconfiguration Matrix Switch Modules NI PXI-2532, NI PXIe-2532 NEW! • ■ ■ 512-crosspoint matrix in a single 3U PXI slot 4x128 1-wire , 8x64 (1-wire), 4x64 (2-wire), and 8x32 (2-wire) matrix configurations Switch capacity Up to 100 VDC/100 VAC

Contextual Info: White Electronic Designs EDI2GG464128V-D 4x128Kx64 SYNCHRONOUS SRAM CARD EDGE DIMM, 3.3V DESCRIPTION FEATURES 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight

EDI2GG464128V

Contextual Info: EDI2GG464128V 4x128Kx64 Synchronous SRAM CARD EDGE DIMM, 3.3V FEATURES • 4x128Kx64 Synchronous The EDI2GG464128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight (8) Synchronous Burst Ram Devices,

Contextual Info: ^EDI EDI2KG418128V 1 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx18, 3.3V Module Features Synchronous Flow-Through 4x128 K x18 Synchronous The E D I2KG 418128VxxD2 is a Synchronous SRAM , 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts module, orga­

Contextual Info: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V Module Features Synchronous Flow-Through 4x128K x64 Synchronous The ED I2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­

9979

Abstract: j117 J119
Contextual Info: ^EDI EDI2KG432128V 2 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128Kx32 Synchronous The EDI2KG 432128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­