EDI2KG464128V12D Search Results

128*64

Abstract: transistor GW 93 H GW 94 H
Contextual Info: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address

Contextual Info: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM •ELECTRONIC DESISM5, INC 4x128Kx64,3.3V M o d u le Features Synchronous Flow-Through • 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 • Flow-Through Architecture position Card Edge DIMM 120 contacts Module, orga­

Contextual Info: ^EDI EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V Module Features Synchronous Flow-Through 4x128K x64 Synchronous The ED I2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­

J119

Abstract: EDI2KG464128V11D ED12KG
Contextual Info: ^EDI ED I2K G 464128V 4 M egabyte Synchronous Card Edge DIM M ELECTRONIC DESIGNS IN C 4x128Kx64, 3 .3 V M odule Features Synchronous Flow-Through 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 Flow-Through A rchitecture position Card Edge DIMM 120 contacts Module, orga­