4MX9 Search Results

Contextual Info: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1

K7R323682M-FC20

Abstract: K7R320982M-FC20
Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94000 MCM9L4000 4Mx9 Bit Dynamic Random Access Memory Module T h e M C M 9 4 0 0 0 S is a 36M , d y n a m ic ra n d o m acc e s s m e m o ry D R A M m odule o rg a n iz e d as 4 ,1 9 4 ,3 0 4 x 9 bits. T h e m o d u le is a 3 0-le ad sin g le -in -lin e m e m o ry

41C4000CJ

Contextual Info: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS

K7R321882C

Contextual Info: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

MCM94000AS70

Contextual Info: MOTOROLA SC MEMORY/ASIC SIE » b3tj72Sl aafl3t,31 4 7 T M O TO R O LA •ü SEM ICO NDUCTO R v(g TEC H N IC A L DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynam ic random access memory (DRAM) module

K7R323682M-FC20

Abstract: K7R320882M K7R320982M K7R321882M K7R321882M-FC25 K7R323682M K7R323682M-FC16 K7R323682M-FC25 K7R320982M-FC20
Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001

K7R321882C

Abstract: D0-35 K7R320982C K7R323682C
Contextual Info: K7R323682C K7R321882C K7R320982C 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

4MX9

Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001

m7401

Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6

MCM94000AS70

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line memory

KMM594100AN

Abstract: 44C4100 KMM5941 O1040 4Mx1 44C4100AJ
Contextual Info: DRAM MODULE / 4 Mega Byte KMM594100AN Fast Page Mode 4Mx9 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AN consists of two CMOS

K7R320982M-FC20

Abstract: K7R323682M-FC20 K7R320982M K7R321882M K7R321882M-FC16 K7R321882M-FC20 K7R323682M K7R323682M-FC16 4MX9
Contextual Info: K7R323682M K7R321882M K7R320982M 1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1 1. 2. 3. 4. 5. 6. Dec. 5 2001

Contextual Info: K7R323684C K7R321884C K7R320984C 1Mx36, 2Mx18 & 4Mx9 QDRTM II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: K7R323684C K7R321884C K7R320984C 1Mx36, 2Mx18 & 4Mx9 QDRTM II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

RAS 0510

Abstract: aepdx1m9l
Contextual Info: AEPDX1M9L DYNAMIC RAM MODULE > > 1,048,576 x 9 Organization > > 3 0 pin SIP > > Low 0.510 inch stand-off height > > Optional PARITY CHECKER on board > > Single + 5 V p o w er supply > > TTL com patible > > Pin for pin com patible with standard modules without parity checker

Contextual Info: SMART SM536084002P3UU Modular Technologies December 13, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM