4D267S Search Results

Contextual Info: GM23V8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1Mx 8/512Kx 16BIT CMOS MASK ROM Description Pin Configuration The GM 23V8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM 23V8100A

72ZZZZ

Abstract: GM71C4256A-80 GM71C4256A80
Contextual Info: GOLDSTAR TECHNOLOGY 4?E D INC/ 402f l ? S 7 O a O B h n • 1 I PRODUCT SPECIFICATION REV. 1 GM71C4256A GoldStar 262,144 WORDS X 4 BIT CM O S DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Pin C onfiguration The GM71C4256A is the new generation dynamic

GM71C17403b

Abstract: GM71C17403BJ GM71C17403
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

KKZ 09

Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7322010DS/SG is a 2M x 32 bits D y n am ic RA M M O D U LE w h ic h is assembled 16 pieces of 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322010DS/SG is

GM71C18160AJ7

Abstract: S1160 GM71C18160aj GM71C18160A-8 GM71C18160AJ6 GM71C18160A GM71C18160AT7 GM71C18160AJ-6 GM71C18160AJ8
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71C18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7401010CS/SG is an 1M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 10 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GM M 7401010CS/SG is

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402000CS/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 1M x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

gm71v4403

Abstract: MQ2A
Contextual Info: @ LG Semicon. Co. LTD. Description Features • 1,048,576 Words x 4 Bit Organization • Extended Data Out Mode Capability • Single Power Supply 3.3V + 0.3V • Fast Access Time & Cycle Time The G M 71V 4403E/EL is the new g en eratio n dynamic RAM organized 1,048,576 words x 4 bit.

goldstar gm16c450

Abstract: goldstar GM16c550 gm16c450 GOLDSTAR GD75188 GM16C550 GD75188 GOLDSTAR marking
Contextual Info: _ . IC . GM16C550 c i 0 ic r c > c c ir a s y n c h r o n o u s c o m m u n ic a tio n s ELEMENT WITH FIFOs GOLDSTAR e l e c t r o n CO., l t d . Descriptions Features The G M 16 C 5 50 is an asynchronous communi­ cations element A C E that is functionally