4B SOT 23 Search Results

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

BC859 smd

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E

BC557 sot package sot-23

Abstract: BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO

max3281eaut t

Abstract: MAX3284EAUT sot236 mark code 3b MAX3284E MAX3283EAUT
Contextual Info: 19-2320; Rev 0; 1/02 ±15kV ESD-Protected 52Mbps, 3V to 5.5V, SOT23 RS-485/RS-422 True Fail-Safe Receivers Features ♦ ESD Protection: ±15kV–Human Body Model ±6kV–IEC 1000-4-2, Contact Discharge ±12kV–IEC 1000-4-2, Air-Gap Discharge ♦ Guaranteed 52Mbps Data Rate

BC859B 215

Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 15 H C - T R RÛ.35 ERO.014] 3 PLS. 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 P L S 1.90 [0.075] 230 MAX. 2D0 175 150 125 100

SML-LX15SOC-TR

Abstract: 037J
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SM L-LX15SOC-TR RÛ.35 [R0.014] 3 PLS. 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N J j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] 1.90 [0.075] (3 PLS 230 MAX. 2D0 175 150 125 100 75 bU 25 8 SEC. MAX.\

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L —L X 1 5 S G C - T R RÛ.35 [R 0.014] 3 PLS . 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH 8 SEC. MAX.\ 230 MAX. 2D0 175 \ 125 100 (3 1.90 [0.075] PLS

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S ML —LX1 5 S U G C - T R RÛ.35 [R0.014] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T \ N } j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 1.90 [0.075] PLS 230 MAX. 2D0 175 150 125

SOT23 E.8

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S ML —LX1 5 A C - T R RÛ.35 ERO.014] 3 PLS . 3.00 [0.118] 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH 8 SEC. MAX.\ 230 MAX. 2D0 175 \ 125 100 1.90 [0 .0 7 5 ] 75 bU 25

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L —L X 15 S I C - T R RÛ.35 [R0.014] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T \ N J j PARAMETER MIN PEAK WAVELENGTH \ 1,10 [0,043] (3 1.90 [0.075] PLS 230 MAX. 2D0 175 150 125

SML-LX15PGC-TR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SML-LX15PGC-TR RÛ.35 [R 0 .0 1 4 ] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH 8 SEC. MAX.\ 230 MAX. 2D0 175 \ 125 100 1.90 [0 .0 7 5 ] 75 bU 25 Vf

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S ML —L X 1 5 S P G C - T R RÛ.35 [R 0 .0 1 4 ] 3 3.00 [0.118] PLS . 3 lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'G \ N } j PARAMETER MIN PEAK WAVELENGTH 8 SEC. MAX.\ 230 MAX. 2D0 175 \ 125 100 1.90 [0 .0 7 5 ]

RU35

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SML—LX1 5 SIC —RP—TR RÛ.35 ERO.014] 3 PLS . 3 .0 0 [0 .1 1 8 ] 3 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T \ N } j PARAMETER MIN PEAK WAVELENGTH REFLOW PROFILE \ 1,10 [0 ,0 4 3 ] (3 1.90 PLS [0 .0 7 5 ] 230 MAX.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V Pb-Free Packages are Available 3 1 MAXIMUM RATINGS TA = 25°C unless otherwise noted

header 3x2 sm

Abstract: MMBT2222A/SOT CY7C64603-52NC LM64 LM64EVAL MMBT3904 GPD-120
Contextual Info: 1 LM64 Evaluation Board User’s Guide Copyright 2003 National Semiconductor Corporation 1 2 Table of Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3, 4 2.0 Getting Started . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Contextual Info: BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NSVBC858

Abstract: BC857BLT1G SBC856ALT1G SBC856BLT1G SBC857ALT1G SBC857BLT1G SBC857CLT1G bc856blt
Contextual Info: BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements

BC857A BC857b difference

Abstract: BC856 BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

BC856

Abstract: BC856ALT1 BC856BLT1 BC857 BC857ALT1 BC857BLT1 BC858 BC858ALT1 BC858BLT1 BC859
Contextual Info: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage

AAKW

Abstract: AALN UTP025 UTP015
Contextual Info: 19-1712; Rev 1; 4/00 Dual Trip SOT Temperature Switches The MAX6505–MAX6508 temperature switches have dual logic outputs that assert when the die temperature crosses their trip thresholds. Trip thresholds are factory programmed to convenient temperatures in 5°C increments.

UC3843 step down converter

Abstract: UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 6 http://onsemi.com 7 ON Semiconductor Switching Controllers Selection Tables AC−DC/Isolated Switching PFC/PWM Combo Page 14 Power Factor Correction (Page 15) Flyback (Low Power) Forward (Low Power) Half−Bridge

SML-LX15HC-RP-TR

Abstract: 037J
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER S M L - L X 15 H C - R P - T R 3.00 C0.118] — H I REV. RÛ.35 [R0.014] 3 P L S . P O LA R IT Y MARK 3.00 [0.118] 3 1 \ N ELECTRO-OPTICAL CHARACTERISTICS Ta =25T } j PARAMETER MIN PEAK WAVE[ENGTH I_ REFLOW PROntE 1,00 [0.039]

Scans-006076

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML—LX15AGC-TR RÛ.35 [R0.014] 3 PLS. POLARITY MARK 3.00 [ 0 .118] 3 AMBER GREEN 1 2 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T PARAMETER o 2.00 [ 0 ,0 7 9 ] I1 !_ MIN PEAK WAVE1ENGTH MAX UNITS 605 (AMBER) FORWARD VOLTAGE (A/G)