49A SMA Search Results

75329p

Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
Contextual Info: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

Contextual Info: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

AN7254

Abstract: AN7260 AN9321 AN9322 HRFZ44N TB334
Contextual Info: HRFZ44N Data Sheet December 2001 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

FDMS8660AS

Contextual Info: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description „ Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

FDMS8660AS

Abstract: 4410 mosfet fairchild top marking fdms8660
Contextual Info: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

75329G

Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
Contextual Info: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75329p

Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
Contextual Info: HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

5A66

Contextual Info: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement

N5765A

Abstract: N5741A N5700 N5747A N5740A N5746 N5752A N5766A N5770A Xantrex
Contextual Info: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 Models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement

Contextual Info: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

Contextual Info: FDMS8662 N-Channel tm PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description „ Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FDP150N10

Contextual Info: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDB150N10

Abstract: marking 49a
Contextual Info: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDMS3500

Contextual Info: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description „ Max rDS on = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMS3500 tm Trench N-Channel Power MOSFET 75V, 49A, 14.5m: Features General Description „ Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS3500

Contextual Info: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description „ Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS8460

Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

Contextual Info: FDMS3662 tm Trench N-Channel Power MOSFET 100V, 49A, 14.8m: Features General Description „ Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

pd25a

Abstract: FDMS8460
Contextual Info: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description „ Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has

Contextual Info: FDMS5352 tm Trench N-Channel Power MOSFET 60V, 49A, 6.7m: Features General Description „ Max rDS on = 6.7m: at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

FDI150N10

Contextual Info: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDMS8662

Abstract: 207 fairchild
Contextual Info: FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description „ Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest