75329 Search Results

2032b

Abstract: 085002 6-103958-1 amp quality crimping handbook 87733-1 UL 2896 11027 UL 94v-2 mt 4407 1-87666-6
Contextual Info: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010

244252

Abstract: 86016-2 crimp tool 16500-3 1307819
Contextual Info: AMPMODU Interconnection System Mod IV Receptacle Assemblies, Single-Row, Outrigger Design .100 x .100 [2.54 x 2.54] Centerline, End To End Stackable Dual Entry, End Stackable, Low Profile, .100 x .100 [2.54 x 2.54] Centerline, .200 [5.08] Tine Spacing .125±.010

CXG1235XR

Contextual Info: SP5T Antenna Switch CXG1235XR Description The CXG1235XR is an SP5T antenna switch. On chip logic reduces component count and simplifies PCB layout by allowing direct connection of the switch to digital baseband control lines with the CMOS logic levels. It requires 3 CMOS control lines.

3512 h45

Contextual Info: SLWS133A GC4016 MULTI-STANDARD QUAD DDC CHIP DATA SHEET REV 1.0 August 27, 2001 Graychip reserves the right to make changes in circuit design and/or specifications at any time without notice. The user is cautioned to verify that datasheets are current before placing orders.

Contextual Info: 1234563789A7B79C422B9 DEF987B9D26297BB2934729 B 9 97BB99792 B9265789 !8797BB2934729 B "27B!2#9 B '8 B CB"B F"B F"BD!B 6B*BBDFB"F"BBBC+DFB DF"!B F"BCFB ,BD!B"F"B*"B2"BDF"FB

Contextual Info: 1234563789A7B79C422B9 DEFA9C26297BB294729 F 9 97BB919D7F7397BB29347299 9 27B 2!9 F &F"FC D!FE##FF*D#FE#F+A,AF -E#D#"F4"6E)F.F6D"#F#F /#CFA9'19FEFDCF!D#F!!"F

75329p

Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
Contextual Info: interrii 75329G3, 75329P3, 75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75329D

Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Contextual Info: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75329G

Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
Contextual Info: 75329G3, 75329P3, 75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

h240

Abstract: H250 marking H242 3512 h45 ASIC PBGA160 Graychip ddc GSM modem M10 H149 H229 ipad data sheet
Contextual Info: SLWS133A GC4016 MULTI-STANDARD QUAD DDC CHIP DATA SHEET REV 1.0 August 27, 2001 Graychip reserves the right to make changes in circuit design and/or specifications at any time without notice. The user is cautioned to verify that datasheets are current before placing orders.

75329p

Abstract: 75329G HUF75329G3
Contextual Info: in t e is il 75329G3, 75329P3, 75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

TI320C6

Abstract: GC4011 CA3110
Contextual Info: SLWS133A GC4016 MULTI-STANDARD QUAD DDC CHIP DATA SHEET REV 1.0 August 27, 2001 Graychip reserves the right to make changes in circuit design and/or specifications at any time without notice. The user is cautioned to verify that datasheets are current before placing orders.

Contextual Info: 5 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. B y- 1 .27 [.050] I 8.1 3 [.320] 0.38 [.015] /I 2' D B REF -D- 03.66 [0.144] C 0 0 . 8 9 ±0.08 [0.O35+.OO3] O Q O Q B RECOMMENDED P.C. ’’A M P ”, ”CSA”, ” ^ AND ’’DATE CODE’ WITH

Contextual Info: AMPMODU Interconnection System Receptacle Assemblies, Board Mount, Double-Row, Closed Entry, .100 x .100 [2.54 x 2.54] Centerline Horizontal Mount with Guide Pin Slots and Standoffs .320 [8.13] .174 Max. [4.42] (Point of Contact) A Material and Finish .179

Zpad

Abstract: 2coa
Contextual Info: SLWS133A GC4016 MULTI-STANDARD QUAD DDC CHIP DATA SHEET REV 1.0 August 27, 2001 Graychip reserves the right to make changes in circuit design and/or specifications at any time without notice. The user is cautioned to verify that datasheets are current before placing orders.

75329D

Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Contextual Info: 75329D3, 75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: 75329D3, 75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: 75329D3, 75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: 75329D3S October 2013 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ Features • 20A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding

GC4016

Abstract: GC4016-PB IS-136 TQ100
Contextual Info: SLWS133A GC4016 MULTI-STANDARD QUAD DDC CHIP DATA SHEET REV 1.0 August 27, 2001 Graychip reserves the right to make changes in circuit design and/or specifications at any time without notice. The user is cautioned to verify that datasheets are current before placing orders.

Contextual Info: 75329D3, 75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75329p

Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
Contextual Info: 75329G3, 75329P3, 75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

variable resistor 25k

Abstract: Potentiometers "25k CLAROSTAT 308N variable resistor 2.5k 10k spdt potentiometer clarostat POTENTIOMETER Potentiometers 5k log variable resistor 753-0212 clarostat 58c
Contextual Info: Clarostat Wirewound and Modular Potentiometers and Position Sensor Visit ClarostatÕs Website at www.clarostat.com Series TH100 Position Sensor Ñ NEW Ñ Series 58 4-Watt Wirewound Potentiometers 58C Series potentiometers are an industrial grade 4-watt potentiometer. 58C1 Series has

75070-02

Abstract: rema 75188-01 95500-01 95400-01 5H MARKING 954320 marking WMs ampacity 75520-01 75590-02
Contextual Info: Geräte-Steckvorrichtung EN 1175-1, DIN 43589, 150 V Twin plug and socket connectors EN 1175-1, DIN 43589, 150 V 1 REMA Gerätesteckvorrichtungen für Elektro-Flurförderzeuge • 80 AMP, 160 AMP, 320 AMP, sowie 320 AMP Steckvorrichtung mit 400 AMP Kontakten