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Intersil Corporation HUF75329S3ST Trans MOSFET N-CH Si 55V 49A 3-Pin(2+Tab) TO-263AB T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	HUF75329S3ST		1,799			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation HUFA75329S3ST MOSFET N-Channel 55V 49A (Tc) TO-263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUFA75329S3ST		4,875		1	1 - 10 - 100 $0.52 1000 $0.43 10000 $0.38	Buy Now
Fairchild Semiconductor Corporation HUF75329S3ST 49A, 55V, 0.024 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HUF75329S3ST		667			1 - 10 - 100 - 1000 - 10000 -	Get Quote

75329S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75329p Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS Contextual Info: interrii HUF75329G3, HUF75329P3, 75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	huf75329g3 huf75329p3 huf75329s3s 75329p +675329g 37e4 75329s huf75329s3st tb334 to220 nmos	PDF
75329G Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 Contextual Info: HUF75329G3, HUF75329P3, 75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75329g3 huf75329p3 huf75329s3s 75329g +475329p 75329s huf75329s3st tb334	PDF
75329p Abstract: 75329G HUF75329G3 Contextual Info: in t e is il HUF75329G3, HUF75329P3, 75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	OCR Scan	huf75329g3 huf75329p3 huf75329s3s huf7s329p3 +5huf7s329s3s an7254 an7260 75329p 75329g	PDF
75329p Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329 Contextual Info: HUF75329G3, HUF75329P3, 75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology	Original	huf75329g3 huf75329p3 huf75329s3s 75329p +575329g huf75329s3st tb334 75329s 75329	PDF
75329p Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST Contextual Info: HUFA75329G3, HUFA75329P3, 75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75329g3 hufa75329p3 hufa75329s3s 75329p +475329g tb334 75329s hufa75329s3st	PDF
75329s Abstract: HUF75329P3 19407 Contextual Info: HUF75329G3, HUF75329P3, 75329S3, 75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery	OCR Scan	huf75329g3 huf75329p3 huf75329s3 huf75329s3s +5tb334 huf75329 1-800-4-harris 75329s 19407	PDF
75329P Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286 Contextual Info: HUF75329G3, HUF75329P3, 75329S3, 75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced	Original	huf75329g3 huf75329p3 huf75329s3 huf75329s3s +7huf75329 1-800-4-harris 75329p 75329s 75329g huf75329s3st eia rs 481 286	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
75329P Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334 Contextual Info: HUF75329G3, HUF75329P3, 75329S3, 75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery	Original	huf75329g3 huf75329p3 huf75329s3 huf75329s3s +6tb334 huf75329 1-800-4-harris 75329p 75329g 75329s	PDF
75329p Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 Contextual Info: HUF75329G3, HUF75329P3, 75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	huf75329g3 huf75329p3 huf75329s3s 75329p +475329g 75329s huf75329s3st tb334	PDF
Contextual Info: HUFA75329G3, HUFA75329P3, 75329S3S TM Data Sheet November 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	hufa75329g3 hufa75329p3 hufa75329s3s	PDF