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    FDI150N10 Search Results

    FDI150N10 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDI150N10
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 57A I2PAK Original PDF 8
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    FDI150N10 Price and Stock

    onsemi

    onsemi FDI150N10

    N-Channel PowerTrench? MOSFET 100V, 57A, 16mO - Rail/Tube (Alt: FDI150N10)
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    Avnet Americas FDI150N10 Tube 43 Weeks 800
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    Newark FDI150N10 Bulk 200
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    Future Electronics FDI150N10 Tube 43 Weeks 800
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    Onlinecomponents.com FDI150N10
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    TME FDI150N10 1
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    • 100 $1.76
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    Avnet Silica FDI150N10 35 Weeks 50
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    EBV Elektronik FDI150N10 36 Weeks 50
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    FDI150N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		fdi150n10 PDF

    FDI150N10

    Contextual Info: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		fdi150n10o-262 PDF

    Contextual Info: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		fdi150n10 PDF

    Contextual Info: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		fdi150n10o-262 PDF