48Z1 Search Results

Contextual Info: / T T S G S -T H O M S O N M 48Z128 A 7 # . HD»[gHI gTITM m(gS_ M 48Z128Y 1Mb (128K x 8) ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

48t18

Abstract: 48T08 41T56 48T59Y 48Z08 48t86 48T128Y 41T5 D2167D-2 70NS
Contextual Info: GENERAL INDEX ZEROPOW ER M 48Z02 M 48Z12 16 Kb x8 , 7 0 /1 50/200 n s, 5V + 1 0 /- 5 % , 10 year battery 1 6 K b (x 8 ), 7 0 /1 5 0 /2 0 0 n s ,5 V ± 10% , 10 year b a tte ry . 9 M 48Z08 M 48Z18 6 4 Kb (x8), 100ns, 5 V + 1 0 /-5 % . 11 year battery

L-1019

Abstract: DS1225 M48Z08 M48Z18 SOH28 RAM circuit diagram
Contextual Info: w # SCS -THOMSON M48Z08 M 48Z18 k7# IMtlMmitgïïïMMtêS 64Kb 8K • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME - AUTOMATIC POWER-FAIL CHIP DESELECT and

48Z19

Abstract: 49Z19 M48Z09 M48Z19
Contextual Info: rZ J ^7# S G S -T H O M S O N EülD»[llLll @ (Ma(@i M 48Z09 M 48Z19 CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

Contextual Info: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ 48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: 48Z128 48Z128Y ¿= 7 S G S -T H O M S O N ^ 7 # M IE m [i(g]rO M O (§S 1Mb (128K x 8 ZEROPOWER SRAM « INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY • CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

Contextual Info: 5 ï. S G S -1H 0M S 0N ILIMMûiêS 48Z129Y 48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

48Z08

Abstract: X20C16 "Direct Replacement" 48Z18 BQ4010 DS1225 STK10C48 STK10C68 STK11C48 STK11C68
Contextual Info: The Simtek nvSRAM The nvSRAM is a fast access nonvolatile random access memory based on a memory cell that combines SRAM and EEPROM elements. Simtek’s innovation with this unique memory cell allows for the production of the fastest, most dense, most reliable and most versatile monolithic

Contextual Info: 48Z128 48Z128Y / S T SGS-THOMSON ^ 7# MO K&I(iM®KflD^ CMOS 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UN­ LIMITED WRITE CYCLES ■ 10 YEAR MINIMUM DATA RETENTION IN THE

Contextual Info: r Z * 7 J # S G . S - T H O M S O N M 4 8 Z 1 2 8 n a » n n ii g ffi( s ![]( § § M 4 8 Z 1 2 8 Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRrTE CYCLES

M46Z08

Abstract: M48Z08 M48Z18 MK48Z08 SOH28
Contextual Info: / T 7 M48Z08 48Z18 S G S -T H O M S O N CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

M482128

Abstract: 48Z128 48Z12
Contextual Info: 48Z128 48Z128Y ¿ = 7 SCS-THOMSON CMOS 128K X 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L CIRCUIT AND BATTERY ■ C O N V E N T IO N A L SRAM O P E R A T IO N ; UN­ LIMITED W RITE CYC LES ■ 10 YEAR M INIMUM DATA RETENTION IN THE

nv SRAM cross reference

Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
Contextual Info: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written

M48Z128

Abstract: M48Z128Y
Contextual Info: {Z T S G S -T H O M S O N * K Æ O [B Î im © T ÏÏR ή [fflD g § l i » M 4 8 Z 1 2 8 M 4 8 Z 1 2 8 Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

48Z128Y

Abstract: 48z12
Contextual Info: Æ T SGS-THOMSON *7 # . 48Z128 48Z128Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ PIN and FUNCTION COMPATIBLE with

48z02

Abstract: MK48Z02 VA00603 Zeropower ram MK48Z02 MK48Z12 Zeropower ram MK48Z12 PHDIP24 MK4BZ
Contextual Info: 52E D • 71 212 37 0036341= 337 MSGTH T - ¥ ^ ~ Z 3 ^ / 2 - SGS-THOMSON MK48Z02 KLKSIMKS_ 48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER - DATA SECURITY PROVIDED BY AUTOMATIC

Contextual Info: M48Z08 A 7 # . [M»[g[LI gmMD(gS_ 48Z18 / T T S G S - T H O M S O N 64Kb (8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES SNAPHAT (SH) Battery ■ READ CYCLE TIME EQUALS WRITE CYCLE

48Z18

Abstract: 48Z08
Contextual Info: r z 7 S C S -T H O M S O N “ 7# M K 4 8 Z 0 8 .1 8 M K 4 8 Z 0 9 .1 9 CMOS 8K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POW ER SRAM, POW ER-FAIL CO NTRO L CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE TIME.

48Z08

Abstract: MK48Z09 FFD 443
Contextual Info: • [ Z 7 ^ 5 3 7 p o s a g li g ■ T - q k ^ v r Z - _ S G S - T H O M S O N M K 4 8 Z 0 8 / 1 8/ 09 /19 B [ ^ D » i [ L i » i D ( g S _ -55/70/10/15/20 I S G S-TH0MS0N IDE » 8 K X 8 ZEROPOWER SRAM FEATURES ■ INTEGRATED ULTRA LOW POWER SRAM,