48Z12 Search Results

Contextual Info: / T T S G S -T H O M S O N M 48Z128 A 7 # . HD»[gHI gTITM m(gS_ M 48Z128Y 1Mb (128K x 8) ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

48t18

Abstract: 48T08 41T56 48T59Y 48Z08 48t86 48T128Y 41T5 D2167D-2 70NS
Contextual Info: GENERAL INDEX ZEROPOW ER M 48Z02 M 48Z12 16 Kb x8 , 7 0 /1 50/200 n s, 5V + 1 0 /- 5 % , 10 year battery 1 6 K b (x 8 ), 7 0 /1 5 0 /2 0 0 n s ,5 V ± 10% , 10 year b a tte ry . 9 M 48Z08 M 48Z18 6 4 Kb (x8), 100ns, 5 V + 1 0 /-5 % . 11 year battery

Contextual Info: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ 48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: 48Z128 48Z128Y ¿= 7 S G S -T H O M S O N ^ 7 # M IE m [i(g]rO M O (§S 1Mb (128K x 8 ZEROPOWER SRAM « INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY • CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

Contextual Info: 5 ï. S G S -1H 0M S 0N ILIMMûiêS 48Z129Y 48Z129V 1Mb 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the

Contextual Info: 48Z128 48Z128Y / S T SGS-THOMSON ^ 7# MO K&I(iM®KflD^ CMOS 128K x 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UN­ LIMITED WRITE CYCLES ■ 10 YEAR MINIMUM DATA RETENTION IN THE

Contextual Info: r Z * 7 J # S G . S - T H O M S O N M 4 8 Z 1 2 8 n a » n n ii g ffi( s ![]( § § M 4 8 Z 1 2 8 Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRrTE CYCLES

M482128

Abstract: 48Z128 48Z12
Contextual Info: 48Z128 48Z128Y ¿ = 7 SCS-THOMSON CMOS 128K X 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L CIRCUIT AND BATTERY ■ C O N V E N T IO N A L SRAM O P E R A T IO N ; UN­ LIMITED W RITE CYC LES ■ 10 YEAR M INIMUM DATA RETENTION IN THE

nv SRAM cross reference

Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
Contextual Info: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written

M48Z128

Abstract: M48Z128Y
Contextual Info: {Z T S G S -T H O M S O N * K Æ O [B Î im © T ÏÏR ή [fflD g § l i » M 4 8 Z 1 2 8 M 4 8 Z 1 2 8 Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

48Z128Y

Abstract: 48z12
Contextual Info: Æ T SGS-THOMSON *7 # . 48Z128 48Z128Y CMOS 128K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ PIN and FUNCTION COMPATIBLE with

48z02

Abstract: MK48Z02 VA00603 Zeropower ram MK48Z02 MK48Z12 Zeropower ram MK48Z12 PHDIP24 MK4BZ
Contextual Info: 52E D • 71 212 37 0036341= 337 MSGTH T - ¥ ^ ~ Z 3 ^ / 2 - SGS-THOMSON MK48Z02 KLKSIMKS_ 48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER - DATA SECURITY PROVIDED BY AUTOMATIC