48T512Y Search Results

AN923

Abstract: Date Code Formats diodes St Microelectronics M48T512 M48T512V M48T512Y
Contextual Info: SCS-THOMSON M 48T512Y M 48T512V R}OD ®i[LI êïï®®liiDD(gS 3.3V-5V 4 Mbit (512Kb x 8 TIMEKEEPER® SRAM P R E L IM IN A R Y DATA INTEGRATED ULTRA LOW POWER SRAM, R EALTIM E CLOCK, POWER-FAIL CONTROL CIR CUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,

Contextual Info: 48T512Y M48T512V 3.3V-5V 4 Mbit 512Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIR CUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: 5 7 . 48T512Y M48T512V SGS-THOMSON 3.3V-5V 4 Mbit 512Kb x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIR CUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

48t18

Abstract: 48T08 41T56 48T59Y 48Z08 48t86 48T128Y 41T5 D2167D-2 70NS
Contextual Info: GENERAL INDEX ZEROPOW ER M 48Z02 M 48Z12 16 Kb x8 , 7 0 /1 50/200 n s, 5V + 1 0 /- 5 % , 10 year battery 1 6 K b (x 8 ), 7 0 /1 5 0 /2 0 0 n s ,5 V ± 10% , 10 year b a tte ry . 9 M 48Z08 M 48Z18 6 4 Kb (x8), 100ns, 5 V + 1 0 /-5 % . 11 year battery