48FBGA Search Results

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

012F

Abstract: reset nand flash 804aH
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.0 Date: August 4th, 2004 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY Document Title MuxOneNAND

48FBGA

Contextual Info: 48FBGA FBGA048-P-0707 TOP VIEW A B 7.0 -0 +0.2 INDEX 0.4 TYP. (See Note 2) S DETAIL 0.25 ±0.05 S 7.0 +0.2 -0 1.05 MAX. 0.10 SIDE VIEW S 0.10 C 1.375 TYP. 0.375 TYP. 0.75 TYP. F D E C B A 1 2 3 4 5 6 7 8 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm. 2. * Land hole diameter for ball mounting.

48FBGA

Contextual Info: 48FBGA FBGA048-P-0811 TOP VIEW A INDEX 8.0 +0.2 -0 B 0.4 TYP. (See Note 2) SIDE VIEW S DETAIL 0.25 ±0.05 S +0.2 1.05 MAX. 0.10 11.0 -0 S 0.10 0.75 TYP. C 3.625 TYP. 0.375 TYP. BOTTOM VIEW 0.75 TYP. E D C B A 1 2 3 4 5 6 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm.

48FBGA

Abstract: FBGA048-P-0808
Contextual Info: 48FBGA FBGA048-P-0808 TOP VIEW A B 8.0 +0.2 -0 INDEX 0.4 TYP. (See Note 2) SIDE VIEW S DETAIL 0.25 ±0.05 S 1.05 MAX. 0.10 8.0 +0.2 -0 S 0.10 C 1.375 TYP. 0.375 TYP. 0.75 TYP. F D E C B A 1 2 3 4 5 6 7 8 φ 0.40 ±0.03 NOTES: 1. Dimensions are in mm. 2. * Land hole diameter for ball mounting.

K1S161611A

Abstract: K1S161611A-I
Contextual Info: Preliminary K1S161611A UtRAM Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft October 6, 2003 0.1 Revised - Added Lead Free 48-FBGA-6.00x7.00 Product November 25, 2003 Preliminary

tba 2003

Abstract: K6F1616U6C-FF70 K6F1616 K6F1616U6C
Contextual Info: Preliminary CMOS SRAM K6F1616U6C Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark November 14, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K1S1616B1A

Abstract: K1S1616B1A-I
Contextual Info: Preliminary UtRAM K1S1616B1A Document Title 1Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark October 6, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K6F8016R6C

Contextual Info: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K1S3216B1C-FI70

Abstract: K1S3216B1C K1S3216B1C-I
Contextual Info: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0

K6F8016U6C

Contextual Info: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM

Contextual Info: CMP0417AAx-E CMOS LPRAM Document Title 256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004

F60E

Abstract: CMP1617BA2 cmp1617ba CMP1617BX2 CMP1617BA1 CMP1617BA4 CMP1617BA5 CMP1617BX1 CMP1617BX4 CMP1617BX5
Contextual Info: CMP1617BAx-E CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add Direct DPD Modify MRS Entry Modify PASR Current Mar. 15th, 2004

Contextual Info: FMP1617CCx CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Apr. 19th, 2006 Preliminary 0.1 Revised P/N according to the new P/N system Jun.01st , 2006

Contextual Info: CMP0817BAx-E CMOS LPRAM Document Title 512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Dec. 22nd, 2003 Preliminary 0.1 Add tCP=10ns in AC characteristics Minor Changes Mar. 10th, 2004

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

HY62UF16201A-I

Abstract: HY62UF16201A
Contextual Info: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: HY64UD16322M Series Document Title 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM Revision history Revision No. History Draft Date Remark 1.0 Initial Jan. 04. ’ 01 Preliminary 1.1 Revised Jul. 03. ’ 01 Preliminary Jul. 18. ’ 01 Preliminary Oct. 06. ’ 01