473 MARKING CODE TRANSISTOR Search Results

Contextual Info: DTA114TE DTA114TUA DTA114TKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTA114TE, DTA114TUA, and DTA114TKA; 94 a built-in bias resistor allows inverter

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking FB

Contextual Info: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: • bb53^31 0025b31 S3? H A P X N AMER PHILIPS/DISCRETE BST15 BST16 b7E V J V. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in m iniature plastic envelopes intended fo r use in am plifier and switching applications Complementary types are BST39/40.

ntc 1,0 0334

Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 21 - NB 23 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSP130 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use

BCW72

Abstract: marking k2P BCW71 k1p sot-23 BC710 ScansUX40
Contextual Info: 711002b DQbßSS3 3 ^ «PHIN BCW71 BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA BCW71 BCW72 D.C. current gain at Tj = 25 °C

BC 170 transistor

Abstract: bc 471 transistor bc 470 Q62702-C2320 6bs transistor SOT-323 N transistor 6cs 1B marking transistor marking 6Bs bc 170 c sot 323 lb
Contextual Info: SIEMENS BC 817W BC 818W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code BC 817-16W

lidar ACC

Abstract: airbag
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors VJ.31 / VJ.34 • Automotive Applications • Product Range • AEC-Q200 Testing • Part Numbering w w w. v i s h a y. c o m instructional G uide Vishay Vitramon Automotive MLCC s Surface-Mount Multilayer

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: • bbSBTBl QOSMSfl? 70S H A P X N AHER PHILIPS/DISCRETE BCW71 BCW72 b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

Siemens SRS 20

Abstract: marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens
Contextual Info: SIEMENS B S S 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 131 Vbs 240 V b 0.1 A Type BSS 131 BSS 131 Ordering Code Q62702-S565 Q67000-S229 flDS(on) 16 Q Pin 3 S Package

transitor RF 98

Abstract: BFR360F E6327 GMA marking
Contextual Info: BFR360F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 1
Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEM ENS BFP 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f l —7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking code 2t7

Abstract: marking k2P Y474 BCW72 marking ATB ap 474 marking k1p marking KlP SOT-23 BCW71 k1p sot-23
Contextual Info: • bbSBTBl 0QEH5&7 70S H A P X N AP1ER PHILIPS/DISCRETE BCW71 BCW72 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

transistor 473

Abstract: X0N60S5 siemens electrical devices
Contextual Info: SIEMENS SPHX0N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best/ì S on) in TO 218 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • di^d/rated 1 2 3 • 150°C operating temperature G D S Type SPHX0N60S5

Contextual Info: BSS 229 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 250 V /0 0.07 A ^DS on 1 0 0 i l N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Pin C onfigu ration Marking Tape and Reel Inform ation

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFR360F TRANSISTOR MARKING NK
Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • For low noise amplifiers 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BF 331 TRANSISTORS

Abstract: thermistor NTC 0223 smd marking d4 SMD Transistors series nc
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 21 - NB 23 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.

tokin 473 5.5v

Abstract: tokin fyh 5.5v tokin 473 0,47F, 5,5v, FYD 5,5v 473 220 microfarad 35v electrolytic capacitor tokin 0.47f 5.5v FR tokin 0,047F 5.5v FYD .047F tokin fyh 5.5v 0.47F
Contextual Info: SUPERCAPACITOR WORLD WIDE WEB EC-200E SUPERCAPACITORS ELECTRIC DOUBLE-LAYER CAPACITORS Vol.02 CONTENTS TOKIN SUPERCAPACITORS / WORLD WIDE WEB ORGANIZATION OF SUPERCAPACITOR SERIES 3 BACKUP PERFORMANCE SELECTION 3 OPERATING PRINCIPLES 4 TYPICAL APPLICATIONS