hmc480ST89e
Abstract: H480 HMC480ST89 SiGe HBT GAIN BLOCK MMIC AMPLIFIER
Contextual Info: HMC480ST89 / 480ST89E v01.0605 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Designer’s Kit Available Typical Applications Features The HMC480ST89 / HMC480ST89E is an ideal RF/ IF gain block & LO or PA driver for: P1dB Output Power: +19 dBm to 2.5 GHz
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hmc480st89480st89ehmc480st89ehmc-dk001+2h480sige hbt gain block mmic amplifier
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2609 al
Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
Contextual Info: POUEREX INC TID D • TS^MbSl ODDlflfiO 5 m Thyristor Assemblies-Water Cooled Assembly Module Type PTL6T620_ 15 _ 20 _30 PTL6T625_ 25 _30 _40 PTL7T720 _ 35 _ 45 _ 55 PTL7T7S0_55 _ 65 _ 75 PTL9T9G0_ 08 — — 10 _12
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ptl6t620_ptl6t625_ptl7t720ptkata20_+62609 alkt 708459 marking sot89powerex kspowerex ktthyristor br 403
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sot-89 marking E5
Abstract: XC6372D matsua capacitor CE Series XC6372 XC6372A XC6372A301PR XC6372B XC6372C XC6372E 456I
Contextual Info: Series Dual Mode [PWM/PFM] Step-Up DC/DC Controllers/Converters ◆CMOS Low Power Consumption •Applications ◆Operating Voltage : 0.9V~10.0V ●Cellular phones, pagers ◆Output Voltage Range : 2.0V~7.0V ●Palmtops ●Cameras, video recorders ◆Output Voltage Accuracy : ±2.5%
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50khz100khz180khzxc6372+11control00xc6372a501prxc6372a301prsot-89 marking e5xc6372dmatsua capacitor ce seriesxc6372axc6372bxc6372cxc6372e456i
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film capacitor 0.33uf/CTX x1
Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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ds405-00008-2v0-efilm capacitor 0.33uf/ctx x1 |
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LB 122 transistor To-92
Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)
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ne856ne8560024-hourlb 122 transistor to-92+7ne85632mje 1532nec ne856352sc42262sc50062sc5011ne85635
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973-120
Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST
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ne856ne85632ne85633-t1bne85634-t1+13ne85635ne85639-t1ne85639r-t1973-1202sc3357marking k "micro xmicro-x marking 865ne and micro-xnec c 324 cnec ne85635transistor marking 551 sot-892sc42262sc5006
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MJE 1532
Abstract: transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST
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ne856ne85632ne85633-t1bne85634-t1+13ne85635ne85639-t1ne85639r-t1mje 1532transistor bf 760sot-89 marking lb 931ne85630ne85635 packaging schematicne and micro-xnec ne856352sc42262sc50062sc5011
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NE856
Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e
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ne8562sc3355micro-x marking 865ne and micro-x+6ne85632nec ne856352sc42262sc50062sc5011ne85600
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BJT BF 331
Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)
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ne856ne8560024-hourbjt bf 331+7nec ne856352sc42262sc50062sc5011ne85618ne85619ne85630
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SKY77733
Abstract: sky77814 3G HSDPA repeater SKY77778-61 SKY77621 diode Marking code L4W SE2435
Contextual Info: Product Selection Guide November 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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bro254-14bsky77733sky778143g hsdpa repeater+4sky77778-61sky77621diode marking code l4wse2435
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SKY77733
Abstract: QUALCOMM FLIP CHIP ASSEMBLY SKY77765 aat2430 aat3604 aat140
Contextual Info: Product Selection Guide June 2013 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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bro254-13asky77733qualcomm flip chip assemblysky77765+3aat2430aat3604aat140
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SKY77709
Abstract: SKY77432 AAT2430 SMV1275-079 aat3604 DIODE AA116 TT6P3-0860T
Contextual Info: Product Selection Guide June 2014 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, wireless infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone, and tablet
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bro254-14asky77709sky77432aat2430+4smv1275-079aat3604diode aa116tt6p3-0860t
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transistor NEC D 882 p
Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP
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ne856transistor nec d 882 ptransistor c 1349transistor bf 479+1ne85630-t1-a
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016p
Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP
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ne856016pne85633-t1b-anec ne85635+7transistor nec b 882 pnec 2501 le 737ne85600mje 1303ne and micro-x2sc50062sc5011
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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bft65d1279siemens 1414d1275+6germaniumgermanium drift transistordiode a811siemens halbleitergermanium transistorlegiert
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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b3-b3715b3715-x-x-7600transistor 131-6 bj 946transistor bc 564+8transistor bc 949 datenblatttransistor bc 545marking code ags bsp 2000siemens datenbuchbft99mmic smd amplifier marking code 19stransistor smd marking code bc rudiode smd marking 22-16
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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lcd01bfg55aphilips discrete a440ic05 philips+3a1211 lgsmd marking code algbst60
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TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525dl126+10transistor ah-16transistor bh-16equivalent of transistor bc212 bc 214transistor marking code sot-23 2fx2907a pnp bipolar transistorssilicon transistor fs 2025marking jv sod323bf245 replacementgi 312 diodemsd601
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525cbf493s+9bc337 hie hre hfebc449 equivalenttransistor marking code sot-23 2fxmarking 513 sod-323bc213 equivalentmecl 10000bc237c equivalentdiode marking code jv3 fbav70 sot-23 jj
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525marking 513 sod-323+9transistor marking code sot-23 2fxbc449 equivalentdtd113bc548 hie hre hfe steel packagempsw45a replacementbc449a equivalent2n4401 free transistor equivalent bookpower tmosbf256
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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d-8154114-077sq62702-d1353q62702-g172+11q62702-g173ujt 2646transistor j 5804label infineon barcodemsc 1697msc 1697 ic pin diagramrohde und schwarz active antenna he 011cd 6283 audiosmd transistor v75log tx2 0909ic data book free download
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197xs310nw1p 59 transistorw1p 48 transistor+8transistor w1p 83icm ap 1703transistor smd marked rnwtransistor bd139 ph 71w1p 66 transistortransistor w1p 91pnp transistor smd ba rnw1p npn
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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bzx911n8251n8271n829+161n9141n9161n4001gcv73671n4002gcv7756mullard mullard quick reference guidecv7476cv7143cv8805bzv46cv 7476 mullardcv7099cv7100 diodemullard germaniumbyw 64 bridge rectifier
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