456 TRANSISTOR Search Results

Contextual Info: User's Guide SLVU298 – March 2009 TPS54040EVM-456 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS54040 as well as support documentation for the TPS54040EVM-456 evaluation module HPA456 . Also included are the performance specifications,

Contextual Info: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200

Cx2829

Abstract: mindspeed command SRCCTL CX29704 CX28296
Contextual Info: CN8237/CX29704 ATM SAR Evaluation Module Users Guide 500089A February 2002 Ordering Information Model Number Package Ambient Temperature Range CN8237 456-pin BGA –40 °C to 85 °C CX29704 27 x 27, 272-Pin PBGA –40 °C to 85 °C Revision History Revision

IEC-68-2-58

Abstract: HAL114 HAL114UA-E IEC68-2-20 switch ic
Contextual Info: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated

4 Pin SMD Hall sensors

Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

2N5302

Abstract: 2N5303 jantx 2n5302 adc ic 1000C
Contextual Info: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage

Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

ZENER 2V7

Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
Contextual Info: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 512x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67201FV ESA/SCC Detail Specification No. 9301/041

cha 0438

Abstract: SCR bt 107 3 phase AC servo drive schematic SCR IC CHIP induction heating oscillator circuit SCR deta sheet PCR 406 J 3 phase ac Induction motor speed controller ic Nippon capacitors crb 455
Contextual Info: REJ09B0425-0100 16 H8S/2602 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series H8S/2602 H8S/2601 Rev.1.00 Revision Date: Jan. 21, 2008 HD64F2602 HD6432602 HD6432601 Rev. 1.00 Jan. 21, 2008 Page ii of xxxii Notes regarding these materials

dar PLUS sz 1041

Abstract: Nippon capacitors dar PLUS 1029 DTC-339
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Silicon Power Transistor DPAK MJD42c

Abstract: 369D
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

R096

Abstract: FN1L4Z
Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&

Contextual Info: european space agency agence spatiale européenne Pages 1 to 50 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 64K 65536 x 1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE HM65687 ESA/SCC Detail Specification No. 9301/026

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NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: KSR2214 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R, = 4.7K1), R 2= 4 7 K 0 ) • Complement to K SR 1214 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

2SK853

Abstract: 2SK853A 2SK85 L0722
Contextual Info: SEC Junction Field Effect Transistors 2 S K 8 5 3 .8 5 3 A ¡ a & * ts , i& m » * * ♦ § « N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier, Audio Frequency Amplifier f t : mm f t O ftß jfö ig ia . 7 t D / x f / f . I T