450V 15A MOSFET Search Results

450V 15A MOSFET Result Highlights (5)

Part	Manufacturer	Description	Download
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

450V 15A MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H P2H4M44xH	PDF
Contextual Info: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible	Original	50V/500V PD4M441H PD4M440H 300KHz PD4M441H PD4M44xH	PDF
induction heating Circuit Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V PD4M441L PD4M440L PD4M441L PD4M44xL induction heating Circuit	PDF
MTM15N45 Abstract: TO-204AA Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTM15N45 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	O-204AA MTM15N45 MTM15N45 TO-204AA	PDF
450v 15a mosfet Abstract: induction heating Circuit Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V P2H4M441L P2H4M440L P2H4M441L P2H4M44xL 450v 15a mosfet induction heating Circuit	PDF
Contextual Info: Advance Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES	Original	IXYH24N90C3D1 IF110 O-247 24N90C3	PDF
Contextual Info: Preliminary Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V	Original	IXYH24N90C3D1 O-247 IF110 24N90C3	PDF
Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) IXYH24N90C3D1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES	Original	IXYH24N90C3D1 O-247 IF110 24N90C3	PDF
Contextual Info: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	IXYH40N90C3D1 IC110 110ns O-247 IF110	PDF
40N90C3D1 Contextual Info: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	IC110 IXYH40N90C3D1 110ns O-247 IF110 40N90C3D1	PDF
IXYH40N90C3D1 Contextual Info: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C	Original	IXYH40N90C3D1 IC110 110ns O-247 IF110 062in. IXYH40N90C3D1	PDF
n -channel power mosfet Abstract: YS160 34571 Contextual Info: 2SK1454 A P A dvanced Perform ance Series 2077 V dss = 4 5 0 V N Channel Power MOSFET 3457 F eatu res • Low ON-state resistance. - Very high-speed switching • Converters. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss Gate to Source Voltage	OCR Scan	2SK1454 --i30V n -channel power mosfet YS160 34571	PDF
EN3457 Abstract: 2SK1454 Contextual Info: Ordering number:EN3457 N-Channel Silicon MOSFET 2SK1454 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1454] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4	Original	EN3457 2SK1454 2SK1454] EN3457 2SK1454	PDF
2SK1454 Contextual Info: Ordering number:EN3457 N-Channel Silicon MOSFET 2SK1454 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1454] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4	Original	EN3457 2SK1454 2SK1454] PW10s, 2SK1454	PDF

Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V PD4M441L PD4M440L PD4M441L 150MAX -441L -440L	PDF
450v 15a mosfet Abstract: 440L PD4M440L PD4M441L Mosfet 30A 250V Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	PD4M441L PD4M440L 50V/500V PD4M441L Tem100 150MAX 450v 15a mosfet 440L PD4M440L Mosfet 30A 250V	PDF
induction heating Circuit Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V PD4M441L PD4M440L PD4M441L 150iMAX 56i/W -441L -440L induction heating Circuit	PDF
220g Contextual Info: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H 150iMAX 56i/W -441H -440H 220g	PDF
441H Abstract: PD4M440H PD4M441H Contextual Info: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible	Original	PD4M441H PD4M440H 50V/500V 300KHz PD4M441H 441H PD4M440H	PDF
Mosfet 30A 250V Contextual Info: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible	Original	50V/500V PD4M441H PD4M440H 300KHz PD4M441H 150iMAX 56i/W -441H -440H Mosfet 30A 250V	PDF
Contextual Info: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	PD4M441L PD4M440L 50V/500V PD4M441L -441L -440L	PDF
Mosfet 30A 250V Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V P2H4M441L P2H4M440L P2H4M441L 150iMAX 56i/W -441L -440L Mosfet 30A 250V	PDF
induction heating Circuit Abstract: mosfet vgs 5v Contextual Info: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating	Original	50V/500V P2H4M441L P2H4M440L P2H4M441L induction heating Circuit mosfet vgs 5v	PDF
Contextual Info: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible	Original	50V/500V P2H4M441H P2H4M440H 300KHz P2H4M441H -441H -440H	PDF

450V 15A MOSFET Search Results

450V 15A MOSFET Result Highlights (5)

450V 15A MOSFET Datasheets Context Search

induction heating Circuit

MTM15N45

450v 15a mosfet

40N90C3D1

IXYH40N90C3D1

n -channel power mosfet

EN3457

2SK1454

450v 15a mosfet

induction heating Circuit

220g

441H

Mosfet 30A 250V

Mosfet 30A 250V

induction heating Circuit