44T TRANSISTOR Search Results

Contextual Info: Philips Semiconductors kb53R31 003213^ 44T IHAPX Product specification NPN 1 GHz wideband transistor £ BFW92 N AUER PHILIPS/DISCRETE b'lE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power

im317

Abstract: Parallel Application LM317 Battery charger lm317 LM317MP Arnold A-254168-2 core with 60 turns LM317T LM317AMP LM317T TO-202 LM317AK LM317AK-STEEL
Contextual Info: SflE ]> • bSG112M D07bEfiT 44T » N S C E NATL SEMICOND LINEAR LM117A/LM117/LM317A/LM317 3-Terminal Adjustable Regulator General Description The LM117 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 1.5A over a

44t transistor

Abstract: Marking code 44t transistor 44t Self-Oscillating mixer marking 44t Bipolar Junction Transistor marking code .gj marking code gj marking GG BF569
Contextual Info: bBE D • bbSBSBM GG?426b 44T ■ SIC3 BF569 J NAPC/PHILIPS SEMICOND FOR D E T A IL E D IN F O R M A T IO N SEE TH E LATEST ISSUE OF H AN D BO O K SClOa OR D A TA S H E E T SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tran sisto r in a m icro m in ia tu re plastic envelope, intended fo r a pplications in th ic k and th in -film

D67DE5

Abstract: Q6015at
Contextual Info: LO R A S I N D U S T R I E S INC MEE D • 55ÛG44Ô QDG003D 7 « L O R A TRANSISTOR PACKAGE TYPE PART No. DESCRIPTION H fe Pt 25°C Watts iç Amps VEBO Volts VCEO Volts VCBO Volts !ç H fe Amps - 250 250 300 300 5.0 5.0 5.0 5.0 125.00 50.00 S0.00 50.00

Q4015T

Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
Contextual Info: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50

transistor 2SA15

Abstract: 2sa153 2SA15 2SA1539 2SC3954 QDSD475 SA15
Contextual Info: Ordering number: EN 2 4 3 8 A 2SA1539/2SC3954 N0.2438A PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications i Applications . High-definition CRT display video output, wide-band amp Features . High fT: f\p=500MHz

44t transistor

Abstract: AM1011-055
Contextual Info: /= 7 SGS-THOMSON * 7 / . HDW HlLig¥MD gi AM1011-055 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS P R E L IM IN A R Y D A TA . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED ■ 10:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING

2SA900

Abstract: 2SC1568
Contextual Info: Power Transistors 2SA900 2SA900 Silicon PNP Epitaxial Planar Type P ackage Dim ensions A F Pow er A m plifier C om plem entary Pair with 2 S C 1 568 Unit ! mm • Features • Low co llector-em itter saturation voltage V c e i s » i i • TO-126 package, no insulator needed w hen fixing to a heat sink

CZT2222A

Abstract: vqe 14 E vqe 14 vqe 71 44t transistor transistor 44t
Contextual Info: Central“ C Z T2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The C E N TR A L SE M IC O N D U C T O R CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

Contextual Info: Central CZT2222A Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and

Contextual Info: SIEMENS BCR 141S NPN Silicon Digital Transistor Array ►Switching circuit, inverter, interface, driver circuit • T w o galvanic internal isolated Transistors in on e package > Built in bias resistor (R -|= 2 2 k il, R 2= 2 2 k fl) W Ds Q 6 2 7 0 2 -C 2 4 1 6

44t transistor

Abstract: transistor 1B15 T110 imx7 transistor 44t
Contextual Info: h 7 > v 7> £ /Transistors I M X 7 1 IMX7 T M V U - x ' y * K U î - J I ' K t V W X Isolated Mini-Mold Device /Medium Power Amp. • W B ’Ti&EI/Dim ensions Unit : mm 1) SMT (SC-59) tW i — h Tt' 5o 2) s M T < D i « î i * « i c j : » j , m u m j>(4)

44t transistor

Contextual Info: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm

RXT-A28

Abstract: marking 44t Transistors marking 69 rxta28 44t transistor SSTA28 XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728
Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. SST3 Features • Dimensions Units : mm l.9 ± 0 .2 available in the following packages: 03 0.95 0.95 — SST3 (SST, SOT-23) t+qii) | (z)|+] I — MPT3 (MPT, SOT-89),

EER40

Abstract: EER40 transformer stk730-090 EEL-22T transformer STK730D 2R40 STK730-080 stk730-030 STK730-060 EI transformer core power ratings
Contextual Info: Ordering number: EN 4937 Thick Film Hybrid 1C no 4937 ¡I_STK730-060 Self-Excitation Type Semi-Regulated World Spec. Switching Regulator ( 1 1 0 W Output) Overview Package Dimensions The STK730-060 incorporates on-chip all the power

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

BD203

Abstract: bdx77
Contextual Info: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or

BDX78

Abstract: BD201 BD203 BD203 npn BDx77 box77 BD202 BD204
Contextual Info: BD201 BD203 BDX77 SILICON EPITAXIAL-BASE POWER TRANSISTORS IMPN transistors in a plastic envelope. W ith their PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t of 15 to 25 W into a 4 Î2 or

2N3904

Abstract: 2N3904 MOTOROLA 2n3903 2N3904 Equivalent equivalent al 2n3904 motorola 2N3904
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3903 2N3904* NPN Silicon ‘ Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

bc549 equivalent

Abstract: BC550 BC550 Philips BC550C equivalent BC550 equivalent BC549 BC549 philips semiconductors BC550C BC549B equivalent bc549c equivalent
Contextual Info: BC549 BC550 PHILIPS INT ER N AT I ONAL StE D • 711Qfl2t □ D4ED2ta 503 « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Contextual Info: Optical DiSC ICs Optical disc ICs 14-channel BTL driver for CD players | BA6997FP/BA6997FM The BA6997FP and BA6997FM, both designed for CD players, have an internal 4-channel BTL driver and 5V regula­ tor which requires attached PNP transistor , as well as switches for the 5V regulator and temperature monitor pins.

STP60N05FI

Abstract: 20KN50 STP60N05 W237 SGS Transistor
Contextual Info: 7=12=1237 □04fciS3cî Dfi2 • SGTH SGS-THOMSON STP60N05 STP60N05FI ¡ILJOTMiiKgS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP60N05 STP60N05FI ■ . ■ . ■ . ■ . . 50 V 50 V RDS on < 0.02 < 0.02 Ü n Id 60 A 32 A TYPICAL RDS(on) = 0.017 a

2SK2222

Contextual Info: TOSHIBA 2SK2222 «Î0T7250 00233Û1 b74 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt-M O SII 5 2SK2222 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE

Contextual Info: TOSHIBA ^7550 0023574 553 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L2-7r-M0SM 2SK940 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, M OTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. • • • • • 2SK940 INDUSTRIAL APPLICATIONS U nit in mm