44TB2GS Search Results

Contextual Info: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Li l ' ~ O S ' Description F 'M '- f r f HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com ­

HL1221C

Abstract: Hitachi Scans-001
Contextual Info: HI TACHI / OPTOELECTRONI CS IñE D • 44Tb2GS HL1221C GOlOñil 2 ■ InG aA sP LD T - Lil'~ O S' Description Z7 HL1221C is a 1.2 //m InGaAsP laser diode with double heterojunction structure. It is suitable as a light source in fiberoptic com ­ m unications and various other types of optical

2SK553

Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Contextual Info: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •

Contextual Info: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC

HL1323

Contextual Info: HL1323DM InGaAsP LD Description The HL1323DM is a 1.3 pm band InGaAsP laser diode with a double heterostructure. It is suitable as a light source for optical fiber communication systems, such as LAN, CATV, and LJN. Features Fiber Specifications • Long wavelength output: Ap = 1260 to 1340 nm

Contextual Info: HITACHI/COPTOELECTRONICS S l4E D • G012D32 HL7832G/HG bMT « H i m G aAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

2SK641

Abstract: 2SK642
Contextual Info: blE T> m 4 4 ^ 2 0 5 ÜD13114 4T1 2SK641, 2SK642- IHIT4 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and

Contextual Info: HE8403SG/ML GaAIAs IRED Description The HE8403SG/ML are 840 nm band GaAIAs infrared light emitting diodes with a double heterojunction structure. They are suitable as light sources for optical fiber communication systems. Features • High efficiency, high luminance

Contextual Info: HL1521 A/AC InGaAsP LD Description The HL1521A/AC are 1.55 nm band laser diodes with a double heterostructure. Features Long wavelength output: = 1530 to 1570 nm 5 mW CW operation at room temperature Fast pulse response: tp tf < 0.5 ns Package Type • HL1521 A: A1

2SK1205

Contextual Info: MM1b205 GQ13253 022 • H I T M 2 S K 1205 SILICON N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING 1. Gate 2. Drain F lan g e 3. Source (D im ensions i ■ FEATURES • • • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown