4470 MOSFET Search Results

Contextual Info: SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -11 AMP P-Channel POWER MOSFET DESIGNER’S DATA SHEET 1/ Part Number / Ordering Information

mosfet triggering circuit for dc motor

Abstract: 4470 mosfet capacitor cross reference FORWARD REVERSE 3 PHASE MOTOR wiring diagram hybrid pwm dc motor MSK4470
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER 4470 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500 Volt Motor Supply Voltage 10 Amp Output Switch Capability 100% Duty Cycle High Side Conduction Capable

Contextual Info: SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

SFF60P05M

Abstract: SFF60P05Z
Contextual Info: SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

Contextual Info: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C

s8212

Abstract: mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 SIE860DF
Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8212

Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V DRIVE • V d s s .-150V • rDS ON (MAX) . 0.29Í2

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm .4 .5 . 1 5.9 m ax 1.5 < >3.2 mr IrT ¥ 4 .4 1.0 © © 5.45 © 5 .4 5 0.6 0( • 4V DRIVE ©GATE © D R A IN o- • V ds s . -1 5 0 V

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20UMJ-3 OUTLINE DRAWING Dimensions in mm • 4V DRIVE • V dss . -1 5 0 V • rDS ON (MAX) . 0.29ÍÍ

Contextual Info: MITSUBISHI Pch POWER MOSFET FX20VSJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm L © 1 0 ©GATE o- • 4V DRIVE © Ò -H CO c\i © D R A IN ©SOURCE © D R A IN H • V ds s . -1 5 0 V

FX20KMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

fx20smj3

Abstract: 4470 mosfet
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

Contextual Info: Analog Power AM4470N N-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 335 @ VGS = 4.5V ID(A) 2.7 2.5 Typical Applications:

4470 mosfet

Abstract: fx20umj3
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX20UMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20UMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFK250N10P IXFX250N10P TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)

IXFK

Abstract: IXFK250N10P IXFX250N10P PLUS247
Contextual Info: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings

IXFK250N10P

Abstract: IXFX250N10P PLUS247 3jpd
Contextual Info: IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)

423R

Abstract: f423 IR 423
Contextual Info: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE

Contextual Info: • 4305271 0 D S m ? 5 JSHARRIS 344 ■ HAS IR FF420/421/422/423 IRFF420R/421R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0fl and 4.00 • Single Pulse Avalanche Energy Rated*

F1S50N06

Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

6389G50

Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
Contextual Info: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.

FX20KMJ-3

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced