S8212 Search Results

82123

Contextual Info: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

7400 spice model

Abstract: SiE726DF
Contextual Info: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: SPICE Device Model SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8212

Contextual Info: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)

DIODE TA 70/04

Abstract: SC-70-6
Contextual Info: New Product SiA850DJ Vishay Siliconix N-Channel 190-V D-S MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

s8212

Abstract: S-8212 TPCS8212
Contextual Info: S8212 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII S8212 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 16 mΩ (標準)

s8212

Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8212

Abstract: S-8212 TPCS8212
Contextual Info: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)

S-8212

Abstract: s8212
Contextual Info: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)

si7716a

Abstract: Si7716ADN S-82129 si7716
Contextual Info: SPICE Device Model Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

S-8212

Contextual Info: New Product Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging

Contextual Info: New Product Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging

SiS402DN

Contextual Info: SPICE Device Model SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: SPICE Device Model SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

sud50n04-8m8p

Contextual Info: SPICE Device Model SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

7400 spice model

Abstract: SiE726DF d 1047 d 1047 transistor transistor equivalent book FOR D 1047 S-82127
Contextual Info: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

sud50n04-8m8p

Abstract: S-82125
Contextual Info: SPICE Device Model SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8212

Abstract: mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 SIE860DF
Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

3227S

Abstract: 82123 mosfet SPICE MODEL
Contextual Info: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Si7716ADN

Contextual Info: SPICE Device Model Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

s8212

Abstract: S-8212 tpcs8212
Contextual Info: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)

s8212

Abstract: TPCS8212
Contextual Info: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)