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    SIE860DF Search Results

    SIE860DF Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIE860DF-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A POLARPAK Original PDF 11
    SIE860DF-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A POLARPAK Original PDF 11

    SIE860DF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    sie860df2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    sie860df2002/95/ec2011/65/eu12-mar-12 PDF

    s8212

    Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    sie860df18-jul-08s8212 PDF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    sie860df2002/95/ec18-jul-08 PDF

    SIE860DF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package


    Original
    sie860df18-jul-08 PDF

    4422 MOSFET

    Abstract: 3882 power AN609 11136-1 84422
    Contextual Info: SiE860DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    sie860dfan60916-jul-084422 mosfet+33882 power11136-184422 PDF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    sie860df2002/95/ec11-mar-11 PDF

    s8212

    Abstract: mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 SIE860DF
    Contextual Info: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    sie860dfs-8212815-sep-08s8212+4mosfet 0018mosfet spice modelspice model an4470 mosfet PDF

    Contextual Info: New Product SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling


    Original
    sie860df2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V


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    vmn-pt0052-1002 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    R312

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction


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    vmn-pt0052-1209r312 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF