4416 IC Search Results

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

2N4416

Abstract: 2N4416A ITE4416 T072 T092
Contextual Info: IT E 4416, 2 N 4 4 1 6 /A N-Channel JFET BRÜimiL FEATURES • Silicon Planar Epitaxial Construction • Low Noise - NF = 2.0 dB max. @ 100 MHz NF = 4.0 dB max. @ 400 MHz • Low Feedback Capacitancet- C rss = 0.8 pF max. • Low Output Capacitance C oss = 2.0 pF max.

itek

Abstract: MN4416 100PF
Contextual Info: PANASONIC 6932852 M N INDL/ELEK PANASONIC -CIO 7 E DÜJ I NOL»ELECTRONIC OQOt. 3 3 1 ^ 3 2 0 5 5 72C 0 6 3 3 1 D •-: - ^ MN4416 T - % 4416 1 -23-11 16,384 t 'y h C M O S X ^ - r >y^RAM 16,384-Bit CMOS Static RAM s f f i- i- S iiS E l/ P in MN4416 l±, 7 T

Contextual Info: F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L *2N4416A TR A N S IS T O R A E F F E T D E C H AM P, S IL IC IU M . C A N A L N Preferred device D isp o sitif recommandé - H F amplification A m p lific a tio n H F 30 V min 2N 4416

2n4416

Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER

2N4416

Abstract: 2N4416A 2n4416.-30 17nF
Contextual Info: designed fo r B . S H ic o n ix Performance Curves NH See Section 5 B E N E F IT S • Low Noise NF = 3 dB Typical at 400 MHz • Wide Band High gfs/Cjss Ratio 2N4416A • VHF Amplifiers ■ M ixers 2N4416 n-channel JFETs T O -7 2 See S e c tio n 7 «A BSO LU T E M A X IM U M R A T IN G S 25°C

ltcfc

Abstract: LTC4416 transistor marking r2c LTC4416-1 LTC4416EMS SOT23 transistor R2C ltcps marking g1 zener+diode+sr+4416
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes

ltcfc

Abstract: LTC4416 LTC4416-1 Marking R2E r2c transistor R2C marking R2E SOT23 LTC4416EMS LTC4416IMS marking r2c
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO FEATURES U Designed Specifically to Drive Large and Small QG PFETs • Very Low Loss Replacement for Power Supply OR’ing Diodes ■ Wide Operating Voltage Range: 3.6V to 36V

ltcfc

Abstract: LTC4416
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes

20lw

Abstract: ml442
Contextual Info: November 1990 PRELIMINARY . . ML4415, ML4415R dd1fln ML4416R Micro Linear _ ML4416, 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk

Contextual Info: Novem ber 1990 PRELIM INARY ^ . . ML4415, ML4415R ML4416 ML4416R Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES Th e ML4415, ML4416 d evices are bipolar m onolithic read/write circuits designed for use w ith fixed disk ferrite center-tapped recording heads. Th ey provide a

Contextual Info: November 1990 PRELIMINARY rtfe, ML4415, ML4415R ML4416, ML4416R . Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk ferrite center-tapped recording heads. They provide a

OV14810

Abstract: MIPI ov14810 LVDS to MIPI OV14810-A16A image MIPI to RGB 116-Pin OmniVision 5 megapixel DVP MIPI image sensor MIPI
Contextual Info: OV14810 14 megapixel product brief lead free available in a lead-free package 14.6 Megapixel Photography and Full 1080p High-Definition Video The OV14810 is the ultimate solution for high quality point-and-shoot photography and full HD video recording, combining 14.6-megapixel photography with 1080p/60

F545

Contextual Info: 545 54F/74F545 Connection Diagrams Octal Bidirectional Transceiver W ith 3-State Inputs/O utputs Ao[[ Ai [7 Description A2 [3 The ’F545 is an 8-bit, 3-state, high-speed transceiver. It provides bidire ction al drive fo r bus-oriented m icro proce ssor and digita l

a5 gnd

Contextual Info: IMAGE SENSOR Flat panel sensor C7930DP For mammography, high resolution Flat panel sensor C7930DP is a digital X-ray image sensor newly developed as a key device for DFFM Digital Full Field Mammography and X-ray microscopy, etc. This flat panel sensor utilizes our advanced process technology and 12-inch single crystal wafers to acquire

a5 gnd

Abstract: LEMO DB-C4-J11-F db-c4-j11 purple photodiode PCI-1424 C7930DP DIGITAL FRAME image sensor x-ray PCS-E80LKPA
Contextual Info: IMAGE SENSOR Flat panel sensor C7930DP Large area soft X-ray imaging, high resolution Flat panel sensor C7930DP is a digital X-ray image sensor newly developed as a key device for X-ray radiography, etc. This flat panel sensor utilizes our advanced process technology and 12-inch single crystal wafers to acquire high resolution and high quality digital X-ray

IC 4093 pin configuration

Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

Contextual Info: R&E INTERNATIONAL, INC 441GB CMOS QUAD ANALOG SWITCH FEATURES ♦ DPDT Switch Operation W ithout External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 Q typ. over 15Vp.p Signal Input Range,

Contextual Info: CRO4400A-LF 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4380 - 4420 MHz • Tuning Voltage: 0.5 - 4.5 Vdc • MINI-16 - Style Package

MPF102 JFET

Abstract: 2N3966 2N4416-16A 2N5555 2N5668-70 MPF102 MPF108 MPF112 PN4416 K1837
Contextual Info: U 1994 JET n -c h a n n e l s ilic o n JF E T Siliconix m ance C u rv e s N H designed fo r . . . ^ iction 5 • VHF Amplifiers BENEFITS • Low r\loise = 3 dB Typical at 4C 0 MHz ■ Mixers . nf • Wideb and Hig li Gfs/Cjss Ratio ied for Operation at 400 MHz

Contextual Info: V910ME20 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 3920 - 4520 MHz • Tuning Voltage: 1-7 Vdc • MINI-14S-L - Style Package

vlf 12.5 kHz schematic

Abstract: 4416B 4000B 4016B MAXIMUM ANALOG SWITCH DPDT
Contextual Info: 4416B INTERNATIONAL, INC. CMOS QUAD ANALOG SWITCH FEA TU R ES ♦ DPDT Switch Operation Without External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 f í typ. over 15Vp.p Signal Input Range,

J2N4393

Abstract: J2N4416 IC 4093 J-2N4393 2N 2222 J2N4222 J-2N4093 J-2N4416 J2N4392 J2N2222A
Contextual Info: chips/pastilles y signal transistors transistors de signal THOMSON-CSF P Types v CEO 1*21 E NPN PNP Dimensions mA (mm) (W) (V) J-2N 2906 0,5 0,4 30 40 40 40 120 120 150 150 0,45 0,45 0,5 0,4 40 60 40 40 120 120 150 150 0,45 0,45 X J-2N 2906 A 0,5 0,4 30

4040N

Contextual Info: ERICSSON ^ April 1997 PBR510 12/1 LPC Line Resistor Network Description Key Features The Line Protection Resistor Network LPC PBR 510 12/1 consists of a ratio matched pair of thickfilm resistors on a ceram ic substrate. PBR 510 12/1 is used in telephone line interface overvoltage protection networks, where the LPC resistors