4416 Search Results

2N4416

Abstract: SST4416
Contextual Info: Tem ic 4416/4416A/4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

Contextual Info: MATERIAL DECLARATION SHEET Material # Model 4416T-L Product Line Networks Date 02-January-2005 RoHS Compliant Yes No. 1 2 3 4 Construction Element Element Material Group Material Weight [g] Materials Ceramic Conductor Ink Glaze 0.14324 0.000026 0.000013 0.000037

4416P-LF

Abstract: 4416plf 4416pl
Contextual Info: MATERIAL DECLARATION SHEET Material # 4416P-LF Series Product Line Networks Date 05/13/2005 RoHS Compliant Yes No. 1 2 3 4 Construction Element Element Material Group Material Weight [g] Materials Ceramic Conductor Ink Glaze 0.14324 0.00048 0.00027 0.00002

4416B

Abstract: EJ21 4416BM1 microdot 10-32 EHM1159 BATTERY CHARGER cutoff endevco
Contextual Info: Model 4416B Battery powered Isotron conditioner Features Description • Low noise operation • Portable compact size • Selectable gain of 1 or 10 • Status indicator LED • Operational during battery recharge cycle • Eight hours of continuous battery operation

NEC UPD44164182

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ44164082, 44164182, 44164362 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE 2-WORD BURST OPERATION Description The µ44164082 is a 2,097,152-word by 8-bit, the µ44164182 is a 1,048,576-word by 18-bit and the µ44164362

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µ44164084 is a 2,097,152-word by 8-bit, the µ44164184 is a 1,048,576-word by 18-bit and the µ44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µ44165082 is a 2,097,152-word by 8-bit, the µ44165182 is a 1,048,576-word by 18-bit and the µ44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µ44164085 is a 2,097,152-word by 8-bit, the µ44164185 is a 1,048,576-word by 18-bit and the µ44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

C3225

Abstract: C5750X7R1H225M
Contextual Info: 4416_C3225 1/3 C Series Ceramic Capacitors For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications. • Low ESR and excellent frequency characteristics make this

C5750X7R1H475M

Contextual Info: 4416_C3225 1/4 C Series Ceramic Capacitors For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications. • Low ESR and excellent frequency characteristics make this

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µ44165082 is a 2,097,152-word by 8-bit, the µ44165182 is a 1,048,576-word by 18-bit and the µ44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µ44164085 is a 2,097,152-word by 8-bit, the µ44164185 is a 1,048,576-word by 18-bit and the µ44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

4416 ic

Abstract: AN4416 copper wire 1mm APP4416 MAX6610 4416 digital voltmeter abstract of Digital Multimeter multimeter circuit
Contextual Info: Maxim > App Notes > Measurement Circuits Temperature Sensors and Thermal Management Keywords: temperature measurement, battery operation, digital voltmeter Aug 28, 2008 APPLICATION NOTE 4416 IC Forms Direct-Readout Temperature Probe By: Bich Pham Abstract: This application note describes a simple circuit that serves as a temperature measurement probe.

uPD44165084

Abstract: uPD44165084F5-E40-EQ1
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µ44165084 is a 2,097,152-word by 8-bit, the µ44165184 is a 1,048,576-word by 18-bit and the µ44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS

Photodiode

Abstract: EPD-4416 4416 elekon
Contextual Info: ELEKON SMD Photodiode EPD-4416 Surface Mount Photodiode Applications: Medical, Commercial Specifications & Ratings: Parameter @ 25ºC Reverse Voltage Operating Temperature Stotrage Temperature Soldering Temperature Power Dissipation Active Area Open Circuit Current

17-33g

Contextual Info: This document was generated on 08/21/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 87760-4416 Active Milli-Grid Connector System 2.00mm Pitch Milli-Grid™ Header, Right Angle, Through Hole, 44 Circuits, 0.38µm

Contextual Info: This document was generated on 05/01/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 87758-4416 Active Milli-Grid 2.00mm Pitch Milli-Grid™ Header, Through Hole, Vertical, 44 Circuits, 0.38µm Gold

dryer

Contextual Info: This document was generated on 03/27/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 44167-0001 Active Flat Blade Flat Blade Appliance Dryer Motor Crimp Housing, 10 Circuit, with Tool Removable Latch

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 44164085A-A, 44164095A-A, 44164185A-A, 44164365A-A 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μ44164085A-A is a 2,097,152-word by 8-bit, the μ44164095A-A is a 2,097,152-word by 9-bit, the

zener+diode+sr+4416

Abstract: 3M Vinyl MSDS 4432 1
Contextual Info: 3 Double Coated Vinyl Foam Tapes 4432 • 4416 • 4408 Technical Data December, 2000 Supersedes September, 1998 Product Description Construction Tape 4432 1/32 in. (0.8 mm) Double-Coated Vinyl Foam Tape Tape 4416 1/16 in. (1.6 mm) Double-Coated Vinyl Foam Tape

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µ44164082 is a 2,097,152-word by 8-bit, the µ44164182 is a 1,048,576-word by 18-bit and the µ44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 44164082A, 44164092A, 44164182A, 44164362A 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μ44164082A is a 2,097,152-word by 8-bit, the μ44164092A is a 2,097,152-word by 9-bit, the μ44164182A is a 1,048,576-word by 18-bit and the μ44164362A is a 524,288-word by 36-bit synchronous double data rate static

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 44165082A, 44165092A, 44165182A, 44165362A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The μ44165082A is a 2,097,152-word by 8-bit, the μ44165092A is a 2,097,152-word by 9-bit, the μ44165182A is a 1,048,576-word by 18-bit and the μ44165362A is a 524,288-word by 36-bit synchronous quad data rate static RAM