4406 TRANSISTOR Search Results

MOSFET 4407 a

Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E 4407M TC4406
Contextual Info: leluom Semiconductor, Inc. TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w here the drains of the totem -pole output have been left separated so

4406 transistor

Abstract: MPF201 AO4406
Contextual Info: March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for

Contextual Info: TYPE 2N5398 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 5 , A U G U S T 1971 FOR V H F A M P L IF IE R A N D M IX E R A PPLICATIO N S • High Transconductance . . . 5000 ¿¿mho Min at 450 M Hz • Low Crss . . . 1.3 pF Max

Contextual Info: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

MOSFET 4407

Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
Contextual Info: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

MAX16058ATA17

Contextual Info: MAX16058 RELIABILITY REPORT FOR MAX16058ATA17+T PLASTIC ENCAPSULATED DEVICES February 3, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.

Contextual Info: ISL54406 Features The Intersil ISL54406 is a Dual SPST Single Pole/Single Throw switch that provides a very low distortion audio path for a stereo headphone or high impedance line-in load. This path can be interrupted to provide >110dB of off-isolation for signal muting purposes into 32Ω or high

ISL54406

Abstract: ISL54406EVAL1Z ISL54406IRTZ ISL54406IRTZ-T ISL54406IRUZ-T TB347 TB363
Contextual Info: ISL54406 Features The Intersil ISL54406 is a Dual SPST Single Pole/Single Throw switch that provides a very low distortion audio path for a stereo headphone or high impedance line-in load. This path can be interrupted to provide >110dB of off-isolation for signal muting purposes into 32Ω or high

Contextual Info: Operational Amplifiers Advance Information/ Preliminary Data CA3420A, CA3420 Low-Supply Voltage, Low-Input Current BiMOS Op Amps Features: • 2 -V s u p p ly at 300-fjA s u p p ly c u rre n t ■ 1-pA typ. in p u t c u rre n t (e ssentially con stant to 85°C )

sn75208

Abstract: SN75208B
Contextual Info: TEXAS INSTR - C L I N / I N T F O T I 8961724 TEXAS INSTR D Ë J flTt.1724 ODVSbBG LIN /IN TFC 91D 75630 D SN75207, SN75207B, SN75208, SN7520BB DUAL SEN SE AM PLIFIERS FOR M O S M EM O R IES OR DUAL HIGH SEN SITIVITY LINE RECEIVERS D 1 3 1 4 , J U L Y 1 9 7 3 —R EVISED SEPTEM BER 1986

tgl 5151

Abstract: smd-transistor rft lautsprecher sce 238 smd-transistor rft katalog B 4101 RFT GER-A B 38593 RFT 38530 E52853
Contextual Info: Seite 3, 3-5/90 Mitteilung aus dem VEB Elektronik Gera Reparaturhinweise für 8teckernetzteile GCN 12 und LCN 6/12 Zur Vermeidung einer Gefährdung durch netzspannungsführende Teile bei der Fehlersuche an o.g. Steckernetzteilen wird folgendes vorgeschlagen:

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

MAX4044

Abstract: MAX4040 MAX4040ESA MAX4040EUA MAX4040EUK-T MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA Nippon capacitors
Contextual Info: 19-1377; Rev 0; 5/98 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features ♦ Single-Supply Operation Down to +2.4V These amplifiers have outputs that typically swing to within 10mV of the rails with a 100kΩ load. Rail-to-rail

MAX4040

Abstract: MAX4040ESA MAX4040EUA MAX4040EUK-T MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA MAX4044 Nippon capacitors
Contextual Info: 19-1377; Rev 0; 5/98 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features ♦ Single-Supply Operation Down to +2.4V These amplifiers have outputs that typically swing to within 10mV of the rails with a 100kΩ load. Rail-to-rail

MAX4040EUK-T

Abstract: MAX4040 MAX4040ESA MAX4040EUA MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA MAX4044
Contextual Info: 19-1377; Rev 1; 9/05 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features The MAX4040–MAX4044 family of micropower op amps operates from a single +2.4V to +5.5V supply or dual ±1.2V to ±2.75V supplies and have rail-to-rail input and

siemens VDE 0660 iec 947-2

Abstract: ups transformer winding formula 400 kvar LV capacitor bank siemens IEC 947-2 VDE 0660 siemens IEC 60947 VDE 0660 B32344 B4406 B44066-D5060-S400 B44066-D7025-S400 400 KVAR, 480 VAC, 3 phase Capacitor Bank
Contextual Info: Power Factor Correction Product Profile 2001 Catalog http://www.epcos.com L1 L2 L3 U I Preview General Awareness of the necessity of power quality is increasing, and power factor correction PFC will be implemented on a growing scale in future. Enhancing power

DE70321

Abstract: CMX7032 MA09568 AIS marine receiver MA09567 MA06510 MA05126 DE70321 pcb VHF Transceiver IC dsc RF5110G
Contextual Info: DE70321/DE70321T CML Microcircuits Demonstration Kit User Manual COMMUNICATION SEMICONDUCTORS UM70321/9 September 2010 Provisional Issue Features • Class B AIS transceiver technology demonstrator DE70321T • Dual Channel Rx-only operation (DE70321) •

MA09567

Abstract: MA09568 DE70321 pcb LTM-455EW
Contextual Info: DE70321/DE70321T CML Microcircuits Demonstration Kit User Manual COMMUNICATION SEMICONDUCTORS UM70321/9 September 2010 Provisional Issue Features • Class B AIS transceiver technology demonstrator DE70321T • Dual Channel Rx-only operation (DE70321) •

Contextual Info: intgl 8XC196MH INDUSTRIAL MOTOR CONTROL CHMOS MICROCONTROLLER High Performance CHMOS 16-bit CPU 16 MHz Operating Frequency 32 Kbytes of On-chip OTPROM/ROM 744 Bytes of On-chip Register RAM Register-to-register Architecture 16 Prioritized Interrupt Sources

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

digital FUEL METER of bikes

Abstract: Electric Bike microcontroller EN26 juvenile diabetes mentor robot Fuels from Plastic Wastes TPG kwh meter electronic of whirlpool whirlpool washing machine circuit electric bike motor
Contextual Info: Freescale Corporate Responsibility Report 08 20 14 26 40 4 33 Forward-Looking Statements Disclosure This report contains “forward-looking statements” within the meaning of the federal securities laws that involve risks and uncertainties. Forward-looking statements

cmc 2951

Abstract: equivalent transistor c 5888 2Z12 S211 "18621" MICROWAVE TRANSISTOR 32359 AM 5888 40738
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> TECHNICAL NOTE 1. P dBm Conversion Table for dBm to m W : P (m w ) = 10 10 , dBm 0.0 0.1 0.3 0.2 0.4 P(dBm) = 0.5 10 * log P ( mw) 0 .6 0.7 0.8 0 .9 0 .0 1.00 1.02 1.05 1.07 1.10 1.12 1.15 1.17 1.20 1.23 1.0 1.26 1.29 1.32

EP2C8F256 package

Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.