43DB271 Search Results

Contextual Info: S C D 7 L 4 P T 1 6 3 7 3 Fast CMOS 3.3V 16-Bit Transparent Latch September 1996 Features Description • Advanced 0.6 micron CMOS Technology The C D74LPT16373 is a 16-bit transparent latch designed with three-state outputs and is intended for bus oriented

Contextual Info: 82C59A HARRIS a S E M I C O N D U C T O R August 1996 C M O S P r io r it y I n t e r r u p t C o n tr o lle r Features Description • 12.5MHz, 8MHz and 5M Hz Versions Available The Harris 82C59A is a high performance CMOS Priority Interrupt Controller manufactured using an advanced 2 \im

AN5337 ca3028

Abstract: CA3028A transistor hh 004 circuits diagram transistor hh 004 CA3053M
Contextual Info: H A R R IS S E N IC O N D SECTOR L IE ¡ss h a r r is • M 3D B B 71 O D i+ b 'ìS a 1 1 7 H H A S CA3028, CA3053 S E M I C O N D U C T O R March 1993 D Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz Features Description

Contextual Info: æ HCTS193MS HARRIS S E M I C O N D U C T O R Radiation Hardened Synchronous 4-Bit Up/Down Counter Septem ber 1995 Features Pinouts 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 Total Dose 200K RAD (Si)

Contextual Info: 33 HIP5015, HIP5016 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge June 1996 Features Description • Complementary Drive, Half-Bridge Power NMOS Designed with the Pentium™ in mind, the Harris Synchro­ FET™ family provides a new approach for implementing a syn­

Contextual Info: HI5780, CXD2306 33 10-Bit, 80 MSPS High Speed, Low Power D/A Converter February1996 Features Description • 80 MSPS Throughput Rate The HI5780, CXD2306 is a 10-bit 80MHz high speed, low power D/A converter. The converter incorporates a 10-bit input data register with current outputs. The HI5780, CXD2306

Contextual Info: H I 110 6 , C X A 1 1 0 6 8 -B it 35 M SPS H igh-S peed D /A C o n verter T T L Inp ut February 1996 Features Description • The H11106, CXA1106 is an 8-bit 35 MSPS high-speed D/A

1b27

Abstract: d40k1 D40K
Contextual Info: HARRIS SEMICOND SECTOR D40K Series SbE D • 4305271 0040770 7<ÎO H H A S File Number 2336 ^ 3 3 ^ 2. 7 TERMINAL DESIGNATIONS 2-Ampere N-P-N Darlington Power Transistors Complementary to the D41K Series Features: • Operates from 1C without predriver JEDEC TO-202AB

Contextual Info: HSP43891 HARRIS æ S E M I C O N D U C T O R Digital Filter January 1996 Features Description • Eight Filter Cells The HSP43891 is a video-speed Digital Filter DF designed to efficiently implement vector operations such as FIR digital filters. It is comprised of eight filter cells

2N4064

Abstract: 2N4063 2N3440 TA-2470 2N3439 2N3439 IR 2N3440 HARRIS ta2458
Contextual Info: P ow er Transistors File N um b er 64 HARRIS SEMICOND SECTOR 2N3439, 2N3440, 2N4063, 2N4064 57E D • 4302271 O G IT ? ^ Ö «HAS. TERMINAL DESIGNATIONS H igh-V oltage Silicon N -P -N Planar Transistors F or H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

26CT32RH

Contextual Info: HS-26CT32RH S Radiation Hardened Quad Differential Line Receiver March 1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP CASE OUTLINE D2, CONFIGURATION C TOP VIEW • Latchup Free

Contextual Info: HS-80C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8-Bit CMOS Microprocessor September 1995 Features Pinouts 40 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T40 TOP VIEW U xi [T m VD D • Radiation Hardened EPI-CMOS

Contextual Info: 3 H F A 1 1 4 5 / 8 8 3 High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable june1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Contextual Info: HS-6664RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM August 1994 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10s RAD Si