432MW Search Results

OP295A

Contextual Info: 2003-02-12 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 75-006-63 OP295A IR-diod 432mW/sr

TSOP 54 PIN

Contextual Info: IBM0165160B 4M x 16 DRAM Features • Low Power Dissipation - Active: 504mW/432mW/396mW max - Standby (LVTTL Inputs): 7.2mW (max) - Standby (LVCMOS Inputs): 720mW (max) • 4,194,304 word by 16 bit organization • Single 3.3 ± 0.3V power supply • 4096 refresh cydes/64ms

Contextual Info: LTC2195 LTC2194/LTC2193 16-Bit, 125/105/80Msps Low Power Dual ADCs FEATURES n n n n n n n n n n n n DESCRIPTION 2-Channel Simultaneous Sampling ADC Serial LVDS Outputs: 1, 2 or 4 Bits per Channel 76.8dB SNR 90dB SFDR Low Power: 432mW/360mW/249mW Total 216mW/180mW/125mW per Channel

SOIC-16

Abstract: VDE0884 AMC1203 IEC60747-5-2 IEC61010-1
Contextual Info: AMC1203 www.ti.com SBAS427B – FEBRUARY 2008 – REVISED MAY 2010 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from

Contextual Info: OPA551 OPA552 OPA 551 O PA OPA 551 551 SBOS100A – JULY 1999 – REVISED OCTOBER 2003 High-Voltage, High-Current OPERATIONAL AMPLIFIERS FEATURES ● ● ● ● ● ● ● ● ● DESCRIPTION WIDE SUPPLY RANGE: ±4V to ±30V HIGH OUTPUT CURRENT: 200mA Continuous

Contextual Info: AMC1203 SBAS427C – FEBRUARY 2008 – REVISED JUNE 2011 www.ti.com 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator Check for Samples: AMC1203 FEATURES DESCRIPTION • • • • • • • The AMC1203 is a 1-bit, 10MHz, isolated delta-sigma ΔΣ modulator with an output buffer separated from

bPA20

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY51V17400A Series •HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: OPA551 OPA552 OPA 551 O PA OPA 551 551 SBOS100A – JULY 1999 – REVISED OCTOBER 2003 High-Voltage, High-Current OPERATIONAL AMPLIFIERS FEATURES ● ● ● ● ● ● ● ● ● DESCRIPTION WIDE SUPPLY RANGE: ±4V to ±30V HIGH OUTPUT CURRENT: 200mA Continuous

MSM51V17100

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V 17I00 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the M SM 51V I7100 is OKI's CM O S silicon gate process technology.

Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers

TSOPII50-P-400-0

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

mosfet p0603

Abstract: schematic atx 160 W BAV99TA 450 atx power supply circuit schematic atx 250 atx 400 power supply schematic DIPSW10 atx 300 power supply schematic atx 350 power supply schematic P0603 equivalent
Contextual Info: ISL6560/62 Evaluation Board Application Note April 2002 AN1009.0 Author: Hal Wittlinger Introduction Description The ISL6560/62 Evaluation Board was designed to accommodate either the ISL6560 or the ISL6562 power supply controller ICs. CORE voltage is set by a five bit DAC

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

S5400A

Abstract: RO3035
Contextual Info: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

A6070M

Abstract: 780sa 7805A PI 81V17805 81v17805a
Contextual Info: P R E L IM IN A R Y - - August 1996 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V 1 7 8 0 5 A -6 0 /7 0 /6 0 L /7 0 L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,1 52x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains

tbd 380

Abstract: sot 23 ktw OPA551FAKTWT
Contextual Info: OPA551 OPA552 OPA 551 O PA OPA 551 551 SBOS100A – JULY 1999 – REVISED OCTOBER 2003 High-Voltage, High-Current OPERATIONAL AMPLIFIERS FEATURES ● ● ● ● ● ● ● ● ● DESCRIPTION WIDE SUPPLY RANGE: ±4V to ±30V HIGH OUTPUT CURRENT: 200mA Continuous

HY51V65164

Contextual Info: HY51V64164,HY51V65164 4Mx16, Extended Data Out mode 1st Generation DESCRIPTION This family is a 64M bit dynamic RAM organized 4,194,304 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY51V16160BJC

Contextual Info: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

HY51V17800B

Abstract: HY51V17800C
Contextual Info: HY51V17800C,HY51V16800C 2Mx8, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

m51171

Contextual Info: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.