41C RESISTOR Search Results

KM41C16000

Abstract: TAA 691
Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM 41C 16000-6 • • • • • • • • • • tR A C tC A C tR C 60n6 15ns 1 10ns KM 41C 16000-7 70ns 20ns 130ns KM 41C 160 0 0-8

Contextual Info: KM41C16101 CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 41C 16101 16,777,216 K M 41C 16101-6 • • • • • • • • • • is a C M O S h ig h s p ee d b it x 1 D y n a m ic R andom A c c e s s M e m o ry . Its

led Diode 850nm

Abstract: HIR42-41C
Contextual Info: Technical Data Sheet 2.6mm Round Subminiature Infrared LED HIR42-41C Features ․High reliability ․High radiant intensity ․Peak wavelength λp=850nm ․Low forward voltage ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions

121LHS22

Abstract: 121PW181 E170632 THC63LVDF84B tektronix 454 NL8060BC31-41 FCC16202AB DOD-PP-0507
Contextual Info: TFT COLOR LCD MODULE NL8060BC31-41C 31cm 12.1 Type SVGA LVDS interface (1port) DATA SHEET DOD-PP-0507 (1st edition) üRoHS 2002/95/EC Compliant All information is subject to change without notice. Please confirm the sales representative before starting to design your system.

41C16000

Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

41C16100

Contextual Info: CMOS DRAM KM41C16100 16M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

CYM1841A

Abstract: CYM1841C CYM1851
Contextual Info: 1CY M18 41C CYM1841A CYM1841C 256K x 32 Static RAM Module Features individual bytes or any combination of multiple bytes through proper use of selects. • High-density 8-megabit SRAM module Writing to each byte is accomplished when the appropriate chip select CS and write enable (WE) inputs are both LOW.

41C16000

Abstract: 41C16000-6 AEE16 KM41C16000-6
Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

T1P42C

Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Contextual Info: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

transistor 30 j 127

Abstract: transistor d 965 al
Contextual Info: MOTOROLA Order this document by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 41C* Com plem entary Power Transistors PNP M JD 42C* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose amplifier and low speed switching applications.

Contextual Info: b?E J> • SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 Dülfc.023 T32 « S U C K KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: KM 41C 16000-6 • • • • • • • • • • tRAC

Contextual Info: KM41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

114352

Abstract: CYM1841B CYM1851
Contextual Info: 41C CYM1841B 256K x 32 Static RAM Module Features • High-density 8-megabit SRAM module • 32-bit standard footprint supports densities from 16K x 32 through 1M x 32 • High-speed CMOS SRAMs — Access time of 12 ns lects CS1, CS2, CS3, CS4 are used to independently enable

4098B

Abstract: 4098 multivibrator 4098* monostable dual retriggerable 4098 functional diagram 4098 7929 P100 4098BE HCF4098BE a/4098B
Contextual Info: o n * / * » . » G s - THor,s<>N 07C B I 7131237 o o m ia i s I C U S /iflO S — IN T E G R A T E D CIRCUIT M K _ 41C 7929225 08943 hcc / hcf « bbb — □ J-S /-/Ÿ S G S SEMI CONDUCTOR CORP DUAL MONOSTABLE MULTIVIBRATOR • • • • • • • •

EL4421CN

Abstract: EL4421CS EL4422CN EL4422CS EL4441CN EL4441CS EL4422
Contextual Info: EL4421C/22C/41C/42C/43C/44C élantec HIGH PERFORMANCE ANAUOS INTEGRMEB CfHCURS EL4421C/22 C/41 C/42C/43C/44C Multiplexed-Input Video Amplifiers F e a tu r e s G e n era l D e sc r ip tio n • U n ity or + 2-gain bandwidth of 80 M Hz • 70 dB off-channel isolation at

Contextual Info: SN54HC374, SN74HC374 OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS S C LS 1 41C - D E C E M B ER 1982 - R EVISED JU LY 1998 • Eight D-Type Flip-Flops in a Single Package • High-Current 3-State True Outputs Can Drive up to 15 LSTTL Loads •

4098B

Abstract: 4098* monostable dual retriggerable
Contextual Info: o n * / * » . » G s - THor,s<>N 07C B I 7131237 o o m ia i s I CUS/iflOS — Ï I 4 fi INTEGRATED I Î V K hcc/hcf« b [_JS CIRCUIT H . . t K 41C 08943 7929225 •i . 4 □ J-S/-/Ÿ S G S SEMICONDUCTOR CORP DUAL MONOSTABLE MULTIVIBRATOR • • •

l44x

Contextual Info: EL4421C/22C/41C/42C/43C/44C G eneral D escription Features T he E L44X X fam ily of video m ultiplexed-am plifiers offers a very quick 8 ns sw itching tim e an d low glitch along w ith very low video distortion. T he am plifiers have good gain accuracy even w hen driving low -im pedance loads. T o save power, th e am ­

HCC4046B

Abstract: ZENER 5V2 4046B
Contextual Info: S 6 S-THOMSON D7C D I 7ia'iB37 DD14772 1 I C U S / H IO S i T T l INTEGRATED CIRCUIT — - 1 h c c /h c f 40«B | T-50-17 f _ 41C 08785 P R E L IM IN A R Y D A TA M ICROPOW ER P H A S E -L O C K ED LOOP • • • • • • • • • • • •

4041UB

Abstract: 4041
Contextual Info: S G S-THOUSON 07C D I 7=12^23? □01474=1 3 1 C u s / m u s t / f f f . INTEGRATED CIRCUIT $ 0 k l hcc/hcf 1 41C 08 76 2 m\ua: \ r- y 3 - 2 1 Q UAD TRU E/C O M PLEM EN T B U F F E R • BA LAN C ED S IN K AND SOURCE C U R REN T; A P P R O X IM A T E LY 4 T IM ES STAN DARD " B "

4046 PLL Designers Guide

Abstract: 4046 vco 4046 as FM demodulator CI 4046 ic 4046 4046 loop filter 4046B HCF4046BF 4046 Frequency synthesizer 4046 self bias amplifier
Contextual Info: S 6 S-THOMSON D7C D I 7ia'iB37 DD14772 1 I C U S / H IO S i T T l INTEGRATED CIRCUIT — - 1 h c c /h c f 4 0 « B | f _ 41C 08785 T-50-17 P R E LIM IN A R Y D A TA MICROPOWER PHASE-LOCKED LOOP • • • • • • • • • • • • • Q U IE S C E N T C U R R E N T S P E C IF IE D T O 2 0 V F O R H C C D E V IC E

4041UB

Contextual Info: S G S-THOUSON 07C D I 7=12^23? □01474=1 3 1 C u s /m u s t / f f f . INTEGRATED CIRCUIT \ $ 0 k l hcc/hcf m \ ua: 1 41C 08 76 2 r-y 3 -2 1 Q U A D T R U E /C O M P L E M E N T B U F F E R • B A L A N C E D S IN K A N D S O U R C E C U R R E N T ; A P P R O X IM A T E L Y 4 T IM E S S T A N D A R D " B "

Iskra relay

Abstract: PR-59 PRB41 pr41c 59C0110 ISKRA PR59C VAC 5048 8 pin relay Socket 60.12 PR58B
Contextual Info: APPLICATION DESIGN Type PR 41 — PR 59 relays are designed fo r applica­ tion in industrial automation, power distribution, trans­ portation equipment, etc. fo r controlling, signalling, and protection purposes. The line of these relays in­ cludes DC and AC versions in the range from 6 to

Contextual Info: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S KM41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its