4145 Search Results

BM-41457ND

Contextual Info: BRIGHT LED ELECTRONICS CORP. BM-41457ND SINCE 1981 Features : 1. 4.118 inch 104.6mm matrix height. 2. Square size 12.0 x 12.0mm. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Multiplex drive , column cathode com.

Contextual Info: IDT7MP4045 IDT7MP41 45 256K x 32 CM OS STATIC RAM M OD UL E DESCRIPTION: The ID T7M P4045/4145 is a 256K x 32 static RAM module constructed on an epoxy lam inate FR-4 substrate using 8 256K x 4 static RAM s in plastic SQJ packages. Availability ot tour chip select lines (one tor each group ot two RAMs)

Contextual Info: 19-4145; Rev 1; 8/08 Low-Power µP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating Features The MAX16016/MAX16020/MAX16021 supervisory circuits monitor power supplies, provide battery-backup control, and chip-enable CE gating to write protect

transistor kt 801

Abstract: S/transistor kt 801 KT 802 transistor a05 801
Contextual Info: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703

Contextual Info: SAMSUNG SEMICONDUCTOR I NC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1212

Abstract: KSR2212
Contextual Info: {SAMSUNG SEM ICONDUCTOR INC KSR1212 IME D | 7^4145 0007034 1 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, interface circuit Driver circuit • Built in bias Resistor (R=47Kfl) • Complement to KSR2212

jj-300

Abstract: transistor 373 KSR1009 KSR2009 transistor c 373 jj100
Contextual Info: SAMSUNG SEMICONDUCTOR INC IME KSR2009 D | 7^ 4145 G0 0 7 1 0 3 1 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T -3 Ì- \ 2> Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7KS1)

NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage

SHD326329D

Abstract: SHD326329N SHD326329P 1200-Volt
Contextual Info: SHD326329 SHD326329P SHD326329N SHD326329D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4145, REV. - HERMETIC POWER ULTRAFAST RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP, 50 NSEC ULTRAFAST RECTIFIER IN TO -257 PACKAGE All ratings are @ TA = 25 °c unless otherwise specified

JESD51-7

Abstract: MAX16016 MAX16021
Contextual Info: 19-4145; Rev 5; 4/11 Low-Power µP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating Features The MAX16016/MAX16020/MAX16021 supervisory circuits monitor power supplies, provide battery-backup control, and chip-enable CE gating to write protect

MAX16020L

Abstract: 4684 MOSFET MAX16016PT
Contextual Info: 19-4145; Rev 6; 11/11 Low-Power µP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating Features The MAX16016/MAX16020/MAX16021 supervisory circuits monitor power supplies, provide battery-backup control, and chip-enable CE gating to write protect

Contextual Info: S A M S U N G S E M I C O N D U C T O R INC Tfi ' ~ KA2249/D DE ; 7^4145 •- 0004035 0 •. T “T n - 0 5 “0 5 ' LINEAR INTEGRATED CIRCUIT FM FRONT END FOR PORTABLE RADIO The KA2249/D is a monolithic integrated circuit designed for FM front end o f the portable radio.

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > RF & C oax > Product Feature Selector > Product Details 414587-2 Product Details

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > RF & C oax > Product Feature Selector > Product Details 414570-2 Product Details

SAMSUNG CHIP CAPACITOR

Abstract: L4145 KS5311A ks531 74145 diagram
Contextual Info: SAMSUNG SEMICONDUCTOR INC OH D Ë J 7 1 L 4145 0 0 0 S Û 3 0 0 T “T " 7 H 3 KS5311 CMOS DIGITAL INTEGRATED CIRCUIT SIMPLE MELODY 1C The KS5311 series is a CMOS LSI chip which electronically plays a prear­ ranged melody. FUNCTIONS • • • • • Tempo: 16 kinds presto-largo

k 4145

Abstract: fzl4145 FZL4 siemens lsl
Contextual Info: SIEMENS Quad Driver Incl. Short-C ircuit Signaling FZL 4145 D Features • Short-circuit shutdown with clock generator • Four driver circuits for controlling power transistors • Overload and short-circuit signaling Type □ FZL 4145 D Ordering Code Package

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > RF & C oax > Product Feature Selector > Product Details 414567-2 Product Details

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > RF & C oax > Product Feature Selector > Product Details 414578-2 Product Details

Contextual Info: SAMSUNG S E M I C O N D U CT O R IN C OH »Ë | 7^4145 KS54AHCT j O E / 1 O  KS74AHCT I * * * ' OOOS'ì'ìO ” 5 ^ ' Quad 3-State Buffers FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74ALS logic .family • Low power consumption characteristic ol CMOS

Contextual Info: SAM SU NG SE MI CONDU CT OR INC OS KS74HCTLS ^ D E | 7T b 4145 B0 0b3 ô5 □ | 3 1 8-Bit Serial-in!Paraliei-0 ut Shift Registers FEATURES DESCRIPTION • AND—Gated enablefdisable serial Inputs » Fully buffered clock and serial Inputs • Direct clear

harris 723

Abstract: samsung 1622
Contextual Info: SAMSUNG ELECTRONICS INC HARRIS bOE H 7^4145 D M F - 3 GDllñSfi 1 4 TSS «SMGK -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +19 dBm Output Power with 9.5 dB Associated Gain at 8 GHz Custom Electrical Test and Screening Available for Source Control Drawings

KMM536256C-8

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7^4145 KM M536256C/CG QQ1504Q 12 4 I SUGK DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance ranae: • • • • • • • tnAC •cac KMM536256C-7 70ns 20ns 130ns KMM536256C-8

BA 92 SAMSUNG

Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: This document was generated on 08/09/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75237-4145 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 5-Pair GbX® Backplane Connector System, Right Guide