41293 Search Results

schalenkern siemens k1

Abstract: 4900 SIEMENS Schalenkern B65651-D630-K26 Schalenkerne smd n48 STYROFLEX p14x8 siemens B65541-T400-A48 B65512A3001X17
Contextual Info: P-Kerne Schalenkerne Allgemeines Allgemeines S + M Components liefert eine breite Palette von Schalenkerngrößen, genannt P-Kerne (Pot Cores), darunter 8 Bauformen gemäß IEC 133 und DIN 41293. Die Kerne werden aus verschiedenen SIFERRIT-Werkstoffen gefertigt und können dementsprechend vielfältig und bis über 100 MHz

Contextual Info: Alle Rechte vorbehalfen/ Ml rights ristrni 2 3 4 5 6 A TI 1 12 86 96 Di c h t u n g / sea/ Montageausschn i1 1 / p a n e! c u t o ut C^l 73 86 n\ y M l Diiensions in n Original Size DIN A 4 Dat. 413277 1 0 .1 0 .0 7 R u l l 412937 2 4 .0 5 .0 7 24782 3 0 .0 9 .9 8 PL

Contextual Info: Alle Rechte vorbehalfen/ hll rights resernd 5 4 3 '/ All Diiensions in m Original Size DIN A A 2 A Dat. 412934 2 2 . 0 5 . 0 7 DY 411606 0 2 . 0 8 . 0 5 DY Detail. 2 8 . 0 9 . 0 0 Insp. 2 8 . 0 9 . 0 0 411057 2 7 .0 5 .0 4 Bor Stand. 29285 0 5 .0 4 .0 1 28297

Contextual Info: Alle Rechte vorbehalfen/ M l rights reserrei 5 4 1 3 D X ohne U b e r w u r f m u t t e r und D i c h t e i n s a t z B without screw cap and sealing All Diiensions in h Original Size DIN A A Techn. Character. Dat. A EC01883 17.05.10 DY 412934 22.05.07 DY

Contextual Info: Alle Rechte vorbehalfen/ till rights resernd 5 4 3 2 1 X ohne U b e r w u r f m u t t e r und D i c h t e i n s a t z B without screw cap and sealing v \ All Diiensions in m Original Size DIN A A Techn. Character. Dat. E C 0 1 8 8 3 1 7 . 0 5 . 1 0 DY A 412934

Contextual Info: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C

Contextual Info: 2SK1419 2063 AP A d v a n ce d P e rfo rm a n c e Series Voss= 6 0 V N Channel Power M OSFET F eatures • Low ON resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

2SK1414

Abstract: ir 9637
Contextual Info: Ordering num ber: EN 4 2 3 0 _ 2SK1414 No.4230 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F e a tu r e s - Low ON resistance, low input capacitance, very high-speed switching. • H igh reliability Adoption of H VP process .

Contextual Info: Alle Rechte vorbehalten/ M l rights ris trn i m 2 4 5 6 A '— ! * 1 * i— ' -1-17,5 22 29 Montageausschn i 11/ panel cut out 70 c^J n \ y til Diiensions in n Techn. Character. Nicht tolerierte Haje /Free s i n M inuets Original Size DIN t 4 Dat.

2SJ192

Abstract: EN3765
Contextual Info: Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ192] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5

siemens ferrite n22 p14

Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Contextual Info: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches

1794-VHSC

Abstract: 1794-PS13 Allen-Bradley 1794-irt8 manual Allen-Bradley 1794-irt8 1794-IRT8 specification 1794-TB3G WIRING DIAGRAM 1794-IRT8 1794-IE8 Allen-Bradley 1794-of4i manual Allen-Bradley 1794-ie8 manual
Contextual Info: Technical Data FLEX I/O and FLEX Integra 1794 Series and 1793 Series Flexible, Inexpensive, / ; ,270 DQG )/(; ,QWHJUD70 DUH IOH[LEOH ORZFRVW PRGXODU ,2 V\VWHPV and Compact IRU GLVWULEXWHG DSSOLFDWLRQV WKDW RIIHU DOO WKH IXQFWLRQV RI ODUJHU UDFNEDVHG ,

2SK1414

Contextual Info: Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . unit:mm 2077A

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST 50 AF RIGHTS RESERVED. REVISIONS P F ZONE LTR 6 D THIS PART 1. j 2 . ^ 7 2 - L T DESCRIPTION

Contextual Info: ÂRK"LES CORPORATION DEPI i 1 2 3 4 5 6 7 8 9 10 PART NAME: TERMINAL, C U ST O M E R DR AW I N G W A T E R T O W N ,MA PARI NO: FEMA LE 3 0 0 0 H 2 I 4A / - 7 - 2 1 MATERIAL FINISH 3 0 0 0 H 2 14 A-7-2 .016 ±.001 TH'K BRASS C 2 6 0 0 0 , 3/4 H A R D PRETINNED

2092A

Contextual Info: 2SJ192 2083A LD L o w D rive S eries V Dss=60V 2092A P Channel Power M OSFET Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

DS-16 SANYO

Abstract: 2SJ226
Contextual Info: Ordering num ber:EN3811 No.3811 _ 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. - Meets radial taping.

2SJ193

Abstract: 41293TH 37662
Contextual Info: Ordering number: EN3766 _ 2SJ193 N o.3766 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. A b s o lu te M ax im u m R a tin g s at T a=25°C

2SK1467

Contextual Info: Ordering num ber:EN35Ö8A 2SR1467 N0.35O8A N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. - Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R atin gs at Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1467 m LD L o w D riv e S e rie s V DSs = 3 0 V 2062 N Channel Power M OSFET 3 50 8A F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

2SK1311

Contextual Info: 2SK1311 2062 LD L o w D rive S eries V d ss = 6 0 V N Channel Power M OSFET F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

Contextual Info: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C

Contextual Info: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage