410 ITT Search Results

DD05215

Abstract: ADD1210
Contextual Info: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking

Contextual Info: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant

7420A

Abstract: 7.5b 35 2N5840 2N5839
Contextual Info: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages

TA7420

Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
Contextual Info: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors

DR 6236

Abstract: arion ar 310
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest North East 20 Mall Road Suite 410 Burlington, MA 01803 617 273-4888 FAX: (617) 273-9363 901 Warrenville Road Suite 120 Lisie, IL 60532-1359 (708) 852-2011 FAX: (708) 852-3096 3655 North First Street

Contextual Info: INTERCONNECTS .018” dia. Pins Straight and Right Angle Double Row Series 410, 450, 499 Series 4XX sockets are available with straight and right angle solder tails. r Series 450 & 499.009 use MM# 3404 & 5011/5113 pins respectively. See pages 170 & 172 for details

SAMSUNG 834

Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street

SM1206UV-405-IL

Abstract: SM1206UV-395-IL
Contextual Info: Absolute Max. Ratings Chip LED Part No. Material SM1206UV-395-IL SM1206UV-405-IL InGaN/SiC InGaN/SiC Em itted Color BLUE UV BLUE UV Length λ p nm Lens Appearance Pd If (Typ) Peak MIN MAX (m W) (m A) If(m A) 25 100 395 400 WATER CLEAR 100 25 100 405 410 WATER CLEAR 100

RP150X1.500-DFT UB

Abstract: IQR 2400 hal 02e B300 type ev 8200 - E
Contextual Info: OSE D I 4ÖSSMSE □□□7TT0 t TOR 02E 07990 international . RECTIFIER D 7 “V ¿J 3 - £ 3 Data Sheet No. PD-2.119 INTERNATIONAL RECTIFIER o R30EF SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 410 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES

RWXD

Abstract: e0123
Contextual Info: REV DESCRIPTION DATE APPROVED A ENGINEERING RELEASE. 0 1 /2 3 /0 3 MC B EC0#410, CHANGED ”0.0 6 7 ” TO ”0.0 8 3 ”. 1 0 /0 4 /0 3 MC 0.146 [3.7mm] _L 0.248 [6.3mm] 1 Chip A bsolute M axim um LED P a rt No. M aterial E m itted C olor Peak Wave Length

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E D 7HbbflSl G004334 410 •IflTY Generic Optoisolator Specifications _ GFH601 Optoisolator G aAs Solid-State Lamp and NPN Silicon Phototransistor T h e GFH601 consists o f a gallium arsen id e, in frared em itting d io d e co u p led with a silicon p h o to tra n sisto r in a

Contextual Info: s = 7 ^ 7# S G S - T H O M S O N B U F 410 K l g K L iM ( s iO ( g S HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

MW131

Abstract: OPI7002 OPI7010 OPI7320 OPI734Q F 10411 pi70
Contextual Info: OPTEK TECHNOLOGY INC ObE D | OODOSSb *4 J| O p to e le c tro n ic s 'd iv is io n M iXW W T R W Electronic Components Group Product Bulletin 5231 January 1985 - 7 " = ^ / ' 3 3 Optically Coupled Isolators Types QPI7002, OPI7010, 0PI732Ü, 0PI734Q .410 10.41 - » .

GA003

Abstract: GV93-53 GV93-52 GV93-54 GV93-62 GV93-63 GV93-64
Contextual Info: CONNOR WINFIELD ran OSCILLATORS SU RFACE MOUNT P L L - B A S E D 120 144 174 232 288 348 464 576 700 Available Frequency Ranges ±5 0 p p m Frequency Stability Operating Temp Range to to to to to to to to to 135 168 205 270 336 410 540 672 800 MHz MHz MHz

Contextual Info: ran SURFACE MOUNT PLL -B A SE D 120 144 174 232 288 348 464 576 Available Frequency Ranges ±5 0 p p m Frequency Stability Operating Temp Range to to to to to to to to 135 168 205 270 336 410 540 672 MHz MHz MHz MHz MHz MHz MHz MHz ± 1 OOppm 144 174 288 348

t410 TRANSISTOR

Abstract: TO46 lens phototransistor 410D TL41 otl410s OT410D OTL410D T410S opto npn L21S
Contextual Info: •i bfl05245 OOODIBÌ fi IOTI OPTO TECHN0L06Y INC MEE D "T -M I-W l OPTO TECHNOLOGY N P N SILICO N P H G T O T R A N S IS T O R TYPE OT 410 Features ■ TO-46 package ■ H erm etically sealed device ■ High sensitivity Description The 0T41C sensors co nsist of

STR w 6053 n

Abstract: STR w 6053 S STR 6053 n STR 6053 PC-620 protech str w 6053 S277-7 STR 6053 S
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 M all Road S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 FAX: (617) 2 7 3 -9 3 63 901 W a rre n v ille R oad S u ite 120 Lisie, IL 6053 2 -13 5 9 (708) 852-2011 FAX: (708) 852-3096

1336Hz

Contextual Info: H O LTE K H r H T99U 410 Microcontroller with DTMF Generator Features • • • • • • • • • • O p e ra tin g voltage: 2.0V~5.5V O p eratio n c u rre n t < 400|iA M ax. @ VDD=2.5V S ta n d b y c u rre n t < 3|iA (32768H z ON a n d sy stem o scillator O FF)

Contextual Info: S G S— THOMSON OMC 0 | 715^237 aGGGÜS3 b j S O L ID ST A T E M IC R O W A V E S D 1 410 :THOMSON-CSF COMPONENTS CORPORATION L Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 800 M H z C O M M U N IC A T IO N S T R A N S IS T O R DESCRIPTION

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

Contextual Info: EPCOS Aluminum electrolytic capacitors Single-ended capacitors S e rie s/T y p e : D ate: B 410 44, B 4 3 0 4 4 D ecem ber 2010 T h e fo llo w in g p ro d u c ts p re s e n te d in th is d a ta s h e e t are be in g w ith d ra w n . O rd e rin g C ode B 41044A8227M 000

177-007

Contextual Info: Micro-D Accessories Shorting Plug Assembly 177-007 Shorting Plug Assemblies are Micro-D connectors with all contacts bussed/ shorted together. Enclosed in a backshell and itted with jackscrews, these shorting plugs provide ESD protection to sensitive instrumentation.

NSP5153

Contextual Info: NSP5153 PRELIMINARY MEDIUM-POWER PNP SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • LOW C O L L EC T O R -E M ITT ER SATURATION VOLTAGE 5 AM PERES • DC CURRENT GAIN SPECIFIED T O • EXCELLENT SAKE OPERATING AREA

CIB1000

Abstract: stps205100ct NSP5428 NSP5430
Contextual Info: NSP5428 NSP5430 PRELIMINARY MEDIUM-POWER NPN SILICON TRANSISTORS .designed for switching and wide band amplifier applications. • • • LOW COLLECTOR-EM ITTER SATURATION VOLTAGE DC CURRENT GAIN SPECIFIED TO 7 AMPERES EXCELLENT SAFE OPERATING AREA M AXIM UM RATINGS*