4096R Search Results

400F

Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT k9f4008w0atcb0
Contextual Info: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998

FZ77

Abstract: HM5264165 HM5264165TT-10 HM5264165TT-12 HM5264165TT-15
Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word x 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word x 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word x 4-bit x 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.1

HM5264165-B60

Abstract: HM5264805-B60 sdram 4 bank 4096 16 HM5264165 HM5264165TT-B60 Hitachi DSA00196
Contextual Info: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832C Z Rev. 1.0 Jun. 25, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

HM5264805LTT-B60

Abstract: HM5264805LTTB60 HM5264805TT-B60 Hitachi DSA00164
Contextual Info: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832D Z Rev. 2.0 Oct. 20, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

5264805

Abstract: HM5264805 Series Hitachi DSA00164
Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-497C Z Rev. 1.0 July 1, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3

C1994

Contextual Info: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible

Contextual Info: HB52A88DB Series 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 8 pcs of 8 M x 8 components HITACHI ADE-203-893 (Z) Preliminary, Rev. 0.0 Feb. 20, 1998 Description The HB52A88DB is a 8M x 64 x 1 banks Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: HM5212165D-B60 HM5212805D-B60 128M LVTTL interface SDRAM 100 MHz 2-Mword x 16-bit x 4-bank/4-Mword x 8-bit x 4-bank PC/100 SDRAM HITACHI ADE-203-953B Z Preliminary, Rev. 0.2 Nov. 30, 1998 Description The Hitachi HM 5212165D is a 128-Mbit SDRAM organized as 2097152-word x 16-bit x 4-bank. The

Contextual Info: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible

TDQ38

Contextual Info: ADVANCE I^ IIC R O N 8 □RAM _ MODULE 8 MEG MT20D840 40 DRAM MODULE 40 DRAM Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% power supply All device pins are TTL-compatible Low power, 60mW standby; 3,280mW active, typical

sdram 4 bank 4096 16

Abstract: HM5264165DTT-B60 Hitachi DSA00196
Contextual Info: HM5264165D-B60 HM5264805D-B60 HM5264405D-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-908 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi

TSOP II elpida

Abstract: HM5264165FTT-A60 HM5264165F HM5264405F HM5264805F *5264165ftta
Contextual Info: EO HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 L 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Pr Description E0135H10 Ver. 1.0 (Previous ADE-203-940B (Z)

GM72V661641

Contextual Info: Preliminary G M 7 2 V 6 6 1 6 4 1 DI/DLI L G S e m ïc o n C o .,L td . Description TheGM72V661641 DI/DLIis a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive

GM72V281641

Contextual Info: GM72V281641AT/ALT 4Banks x 2M x 16bits Synchronous DRAM Description TheGM72V281641AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally

Contextual Info: HM5212165FTD-75/A60/B60 HM5212805FTD-75/A60/B60 128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM E0179H10 Ver. 1.0 Jul. 16, 2001 Description The HM5212165F is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The HM5212805F

GM72V66441

Abstract: GM72V66841
Contextual Info: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.

VA10X

Contextual Info: # LGScmleonCo Lsd GM72V28841 AT/ALT L G S e m s c e n C o , 5L t o , 4,194,304 w o r d x 8 b i t x 4 b a n k Description The GM72V28841 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic including input and output circuits operating

Contextual Info: # LGScmleonCo Lsd GM72V66441 DI/D LI L G S e m s c e n C o , 5L t o , 4,194,304 w o r d x 4 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description TheGM72V66441 DI/DLI is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic

GM72V281641

Contextual Info: LGScmleonCo Lsd 5 LG Sem ;con C o , Lto, GM72V281641 AT/ALT 2,097,152 w o r d x 16 b i t x 4bank SYNCHRONOUS DYNAMIC RAM Description TheGM72V281641 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic including input and output circuits operating

HM5264165

Abstract: HM5264165TT-10 HM5264165TT-12 HM5264165TT-15 HM5264805TT-10 HM5264805TT-12 HM5264805TT-15 Hitachi DSA0015
Contextual Info: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word x 16-bit × 4-bank Synchronous Dynamic RAM 2,097,152-word × 8-bit × 4-bank Synchronous Dynamic RAM 4,194,304-word × 4-bit × 4-bank Synchronous Dynamic RAM ADE-203-497 Z Preliminary Rev. 0.2

HM5264165DTT-A60

Abstract: ADE-203-909A diode a60 HITACHI HX 2272 Hitachi DSA00280
Contextual Info: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909A Z Rev. 1.0 Dec. 3, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The

Contextual Info: Preliminary . / * < > • ^ „ LG Sem icon CO.,Ltd. G M 7 2 V 2 8 4 4 1 A T /A L T 8,388,608 WORD x 4 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description TheGM72V28441 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic

hx 2272 DECODER

Abstract: sdram 4 bank 4096 16 HM5212165LTD-10 HM5212165TD-10 HM5212805LTD-10 HM5212805TD-10 Hitachi DSA00196
Contextual Info: HM5212165 Series HM5212805 Series 128M LVTTL interface SDRAM 66 MHz 2-Mword x 16-bit × 4-bank/4-Mword × 8-bit × 4-bank ADE-203-881B Z Rev. 1.0 Jul. 10, 1998 Description The Hitachi HM5212165 is a 128-Mbit SDRAM organized as 2097152-word × 16-bit × 4-bank. The Hitachi