402B75 Search Results

22p capacitor

Contextual Info: @ LG Semicon. Co., LTD. Description Features The GMM7364100BNS/SG is a 4M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package and 4 pieces of 4M x lbit DRAMs in 20/26 pin SOJ package on both sides the p rin te d c irc u it b o a rd w ith d e c o u p lin g

M7810

Abstract: DNS-80 GM71C4
Contextual Info: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition

lg crt monitor circuit diagram

Abstract: LG crt monitor PCB diagram crt LG monitor circuit diagram GL116 crt monitor block diagram lg 15 Q00472Q lg monitor LG monitor circuit diagram
Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GL1162 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applications. In addition to the three matched video amplifiers, the GL1162 contains three gated single ended input black

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321200BNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200BNS/SG is

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin

GM71C17403b

Abstract: GM71C17403BJ GM71C17403
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: GD74F373 PRELIMINARY DATA SHEET OCTAL D-TYPE FLIP-FLOP WITH TRI-STATE OUTPUTS Features • 8 latches in a single package Pin Configuration • 3-State Bus driving outputs Description The GD74F373 contains eight latches with TRI-STATE outputs for bus-organized system

73DC

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7408100AS/SG is an 8M x 40 bits dynamic RAM MODULE which is assembled 20 pieces of 4M x 4 bit DRAMs in 24 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7408100AS/SG is optimized for

Contextual Info: @ LG Semicon. Co., LTD._ Description Features The GMM7361000DS/SG is a 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package and 4 pieces of 1M x 1bit DRAMs in 20/26 pin SOJ package on both sides the

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7328110BS/SG is an 8M x 32 bits D y n a m ic R AM M O D U L E w h ic h is assembled 16 pieces of 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7328110BS/SG is

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7321010DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010DS/SG is

IC 74LS00

Abstract: 74LS00 74LS00 pin configuration 74LS00 function table pin configuration 74LS00 NAND 74LS00 74LS00 clock frequency 74LS00 Electrical and Switching characteristics 74LS00 application 74ls00 NAND gate
Contextual Info: GD54/74LS00 QUADRUPLE 2-INPUT POSITIVE NAND GATES Description This device contains four independent 2-input NAND gates. It performs the Boolean functions Y = A B or Y = A + B in positive logic. Pin Configuration V cc 4B 4A 4Y 3B 3A 3Y 14 13 12 11 10 9 8 Function Table each gate

Contextual Info: GD74F74 PRELIMINARY DATA SHEET DUAL D- TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP Description Pin Configuration The GD74F74 is dual D-type positive edge trig­ VCC CLR2 02 CK2 PR2 Q2 Q2 [T4~| R 3I fTil FmH Rpl |T | f i l gered flip-flop with Direct Clear CLR and Set

23C4000

Abstract: ci 0804
Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar

GMM7328110B

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7328110BS/SG is an 8M x 32 bits D y n a m ic R AM M O D U L E w h ic h is assembled 16 pieces of 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7328110BS/SG is

L7803

Abstract: GM71C17803B GM71C17803BJ7 GM71C17803BJ-7 1H28 gm71c178 GM71C17803 GM71C17803BJ-8
Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C S 17803B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71C(S)17803B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GMM7361000CS/SG is a 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package find 4 pieces of 1M x lbit DRAMs in 20/26 pin SOJ package on both sides the

GM23C2000

Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C2000 high perfimance read only memory is organized as 262,144 words by eight bits and has an access time of 150ns. It is designed to be compatible with all microprocessors and similar applications where high