400 W TRANSISTOR Search Results

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

pin details of str f6654

Abstract: f6656 f6654 STR-S5707 STR-S5707 applications STR F6656 STR-S5707 STR-S5708 GK-002-1A F6653 Quasi-resonant flyback transformer
Contextual Info: Data Sheet 28114A STR-S5707 AND STR-S5708 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE 7 DRIVE 8 V IN 9 The STR-S5707 and STR-S5708 are specifically designed to meet

15N60

Abstract: NGTB15N60S1EG
Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the

MG200H2CK1

Abstract: tf3s cm7200
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)

12065G105AT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with

TIP50G

Abstract: TIP48G TIP47G tip50 TIP49
Contextual Info: TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. http://onsemi.com Features • • • • 250 V to 400 V Min − VCEO(sus)

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

AVD400

Abstract: ASI10567 818 transistor
Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I

High Current Switching Applications transistor

Abstract: 2SC2656 circuit power convertor dc to dc switching
Contextual Info: 2SC2656 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers

S2185

Abstract: PD55015-E trimmer 3-30 pf
Contextual Info: PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =15 W with 14dB gain @ 500 MHz/12.5 V Description PowerSO-10RF formed lead

2SC3317

Abstract: RL60A
Contextual Info: SavantIC Semiconductor Product Specification 2SC3317 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

AK marking

Abstract: SMD AK SMD BR 08 2SA1740
Contextual Info: Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage

Contextual Info: TOSHIBA 2SK2841 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2841 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS . 10.3MAX.

2SC3969

Contextual Info: SavantIC Semiconductor Product Specification 2SC3969 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For high voltage switching applications

Contextual Info: Transistors IC SMD Type N-Channel Enhancement Mode Vertical D-MOS Transistor KSS87 SOT-89 Features Unit: mm +0.1 4.50-0.1 Direct interface to C-MOS, TTL, etc. +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 No secondary breakdown +0.1 4.00-0.1 High-speed switching

Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ●

Contextual Info: BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W TO-220 PACKAGE TOP VIEW hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package E BC High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package 2N6740 2N6740 NPN PLASTIC POWER TRANSISTOR High Voltage and Power Supplies Switching Applications

2SK945

Abstract: 2SK9
Contextual Info: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)

MG20G6EL2

Contextual Info: MG20G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

MP6702

Contextual Info: MP6702 POWER TRANSISTOR MODULE SILICON N CHANNEL MOS FET HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Drain is Isolated from Case. • 6 MOS FETs are Built-in to 1 Package. • With Built-in Free Wheeling Diode. • Low Drain-Source ON Resistance

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC3039 CSC3039 NPN PLASTIC POWER TRANSISTOR Switching Regulator Applications PIN CONFIGURATION