JIS F05 connectors
Abstract: TOTX1701 JEITA RC-5720B torx1701 todx2701 TODX270B TOTX196B TODX271 TOTX193A TODX271A
Contextual Info: 2008-3 PRODUCT GUIDE Fiber-Optic Devices TOSLINKTM s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g TOSLINK Optical Transmission Devices TOSLINK™ is a family of data transmission devices that use optical signals instead of electrical signals. Because TOSLINK uses an optical fiber cable as
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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bce0030cs-167bce0030dlm2804+9marking 513 sod-323land dpu 230toshiba diode 1ss416 footprint5252 f solarsot23 2fvtah8n401kic sj 4558zener diode reference guidern4983
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transistor SMD t04
Abstract: transistor SMD t05 transistor SMD t04 51 smd T04 transistor kA2 smd smd t05 transistor t05 smd transistor D1060 smd t04 68 smd code t04
Contextual Info: 2009-2 PRODUCT GUIDE LED Lamps SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1 New Product Digest 1. 2. 3. 4. High-Luminous-Flux SMD LED Lamps: TL12 Series . 4
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tlwk1100cf1050f1052h1100b+12bce0006dbce0006etransistor smd t04transistor smd t05transistor smd t04 51smd t04transistor ka2 smdsmd t05transistor t05 smdtransistor d1060smd t04 68smd code t04
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TC7MP3125
Abstract: TC7MPB9306 WPB306 TC74LCX164245 TC74VCX163245 TC7MP3245 TC7MPN3245 TC74LCXR163245 TC74LCXR164245 TC7MPB9306FK
Contextual Info: 2008-9 PRODUCT GUIDE Level Shifters s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g As electronic systems like information and communication systems become increasingly C O N T E N T S 1 Overview 2 Dual-Supply Bidirectional Bus Transceivers
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bce0035de-28831bce0035etc7mp3125+9tc7mpb9306wpb306tc74lcx164245tc74vcx163245tc7mp3245tc7mpn3245tc74lcxr163245tc74lcxr164245tc7mpb9306fk
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toshiba emmc 4.4
Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
Contextual Info: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.
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sce0008ge-28831sce0008htoshiba emmc 4.4+9toshiba 8gb nand flash emmctoshiba emmctoshiba 16gb nand flash emmctcm9000mdtcm9200mdtoshiba emmc catalogtc35893xbgrgb to mipi dsi lcdtoshiba 8gb nand flash bga
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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TB9061FNG
Abstract: TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application
Contextual Info: 2009-3 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,
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NEC 10F triac
Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117
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tlp102tlp106tlp112tlp112a+15tlp113tlp114atlp115tlp115atlp116nec 10f triactlp250 mosfet driverp421fp421 couplerp181 photocouplertlp3065tlp3083tlp520tlp250 mosfet driver application note5252 f 4-pin
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078
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MDS1754
Abstract: mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V
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MDS1652
Contextual Info: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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0342F
Abstract: 82269 MagnaChip Semiconductor
Contextual Info: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state
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MDD1754
Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V
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MSI2021
Contextual Info: Preliminary – Subject to change without notice 0.4Ω Dual SPDT Analog Switch with Negative Swing Feature General Description Features The MSI2021 is a dual single-pole double-throw dual SPDT analog device aimed for analog signals switching applications in various portable electrical
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MDE9754RH
Abstract: 0342F mde9754 8000P
Contextual Info: Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS ON , low gate charge can be offering superior
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MDF1752
Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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mdd3752
Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Contextual Info: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
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MDS1651
Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V
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MDS3651
Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Contextual Info: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
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MDF12N50
Abstract: 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v
Contextual Info: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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MDC0531E
Abstract: MDC05
Contextual Info: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as
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MDS1754
Abstract: trench mosfet mosfet low vgs
Contextual Info: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ Features General Description VDS = 40V ID = 7.6 VGS = 10V RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V The MDS1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability.
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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